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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 362-367 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of electrons in Co/Cu multilayered thin films are of special interest for the giant magnetoresistance (GMR) of this system. The magnitude of this effect depends on the mean free paths and on the strength of the interface scattering which in turn are strongly related to film structure. In this article, we discuss the results of resistance and magnetoresistance measurements carried out during film growth. We characterize the electronic transport parameters of these films and the growth mechanism of the layers. The new technique of the in situ measurement of the magnetoresistance furthermore provides a tool to find correlations of the growth mechanism with the dependence of the GMR on the Co thickness.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7438-7442 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis is presented of the detailed effects of varying the write parameters in Co/Pt multilayer films. Domains written thermomagnetically by laser modulation have been imaged using the modified differential phase contrast mode of Lorentz electron microscopy. The effects of different laser powers and bias fields were investigated. While the domain size increases with laser power, the bias field is found to have a profound effect on domain regularity. The periodicity of the irregular circumference of the domains written at high-bias fields closely resembles the mean repeat in the ac-demagnetized state suggesting that it arises as a relaxation phenomenon.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6230-6230 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer Fe/Tb films were produced by rf sputtering. The thickness ratio of the Fe and Tb single layers was chosen in such kind to give an overall concentration of about 20 at. % Tb. Homogenous amorphous films of such a composition are well known for their perpendicular anisotropy. The investigations in the magnetic properties revealed that the multilayer films showed perpendicular anisotropy much stronger than the homogenous amorphous films. The maximum of the perpendicular anisotropy was found for multilayers with thickness combination of the single layers tFe=1.0 nm, tTb=1.5 nm. The perpendicular anisotropy increases strongly with increasing substrate temperature during rf sputtering. From the results of VSM measurements of the magnetic moment of the samples we must conclude that the Tb single layers are magnetically ordered even at room temperature. The magnetic moment of the Tb film is antiparallel coupled to the moment of the Fe film. The range of the coupling is at least 2 nm. As long as the multilayer films with various thicknesses of the single layers show perpendicular anisotropy, this anisotropy is rather independent of the thickness of the Tb layers but shows a linear dependence of the reciprocal of the thickness of the Fe layers. The magnetic investigations were accompanied by structural investigations. X-ray diffraction shows very clearly the superlattice of the multilayer films. Observations of cross sections of the multilayers by high-resolution electron microscopy revealed very sharp interfaces between Fe and Tb. The Tb films are crystallographically well ordered, whilst the Fe films showed only a nanocrystalline order. Mösbauer investigations are carried out to give an insight in the influence of the Tb films on the hyperfine field at the Fe atoms.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2127-2132 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed analytical transmission electron microscopy investigations were performed on a well-known diffusion barrier system for very-large-scale integration metallization. It will be demonstrated that interfacial reactions are of great importance for the barrier mechanism. Both Ti and TiN act as diffusion barrier for the semiconductor and the metallization, respectively. For an aluminum-based metallization, TiN has a "spongelike'' function due to its ability to absorb several amounts of aluminum at elevated temperatures and therefore inhibits diffusion towards the substrate. Ti acts for silicon as a compound forming barrier according to Nicolet's classification [in Tungsten and Other Refractory Metals for Very Large Scale Integration Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, 1987); pp. 19–26].
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1156-1159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses the reliability of scanning tunneling microscopy (STM) images of mesoscopically rough surfaces. The specific structure of these images represents a convolution between the real surface topography and the shape of the tip. In order to interpret these images quantitatively, the line scans of steep and high steps can be used to obtain an image of the tip itself. This image shows tip radii ranging typically from 5 to 15 nm and cone angles of about 30° over a length of 80 nm, and can in turn be used to recognize the limits of STM resolution on a rough surface: High-resolution transmission electron microscopy cross-section images of Au island films on a Au-Nb double layer are convoluted with the experimentally observed tip shape; the resulting line scans correspond very well with STM graphs of the same samples. Finally an overall criterion for the resolution of the STM on such surfaces is proposed.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5886-5888 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the giant magnetoresistance of two sputtered systems, Co/Cu multilayers with and without Fe buffer layers, with respect to their magnetic and structural properties. A different oscillatory character of the magnetoresistance as a function of Cu interlayer thickness was found for these two series. The specimens were magnetically characterized using a vibrating sample magnetometer. Transmission electron microscope cross-sectional images and low-angle x-ray diffraction analysis indicated a very different quality of the multilayer structure for these two systems. This is assumed to be the reason for their different magnetoresistant behavior.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 867-869 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter critically discusses the topographical information obtained by scanning tunneling microscopy (STM) on surfaces with a mesoscopic roughness, i.e., in the range of some nm's. In a foregoing publication [J. Appl. Phys. 67, 1156 (1990)], we already treated the evaluation of constant current images based on the knowledge of the real surface and the shape of the tunneling tip ("tip shape limited resolution''). Now we deal with the invers problem: the reconstruction of the real surface topography based on the corresponding STM image and the tip shape, using a simple, straightforward formalism.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 95 (1973), S. 1338-1340 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 94 (1972), S. 3940-3946 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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