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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 952-957 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The accuracy of the calibration of a Mott polarimeter with a recently suggested method that uses an auxiliary target is compared with the accuracy obtained with the classical double-scattering experiment in its improved form. It turns out that the former method is affected by depolarization of the polarized incident beam in the auxiliary target. This systematic error source can, however, be eliminated by performing an additional asymmetry measurement.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 24 (1992), S. 313-358 
    ISSN: 0066-4189
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3399-3404 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent advances in polarized-electron sources had the consequence that the accuracy of many experiments with polarized electrons is no longer limited by statistics, but rather by the uncertainty in polarization analysis by Mott scattering. One of the reasons for this uncertainty is spurious asymmetries that are caused by a small misalignment of the polarized beam. This article discusses how spurious asymmetries can be corrected for by proper use of monitor counters. It is shown that such a correction requires proper positioning of the monitor counters. A method of finding and checking the correct analyzer arrangement is given. The result is a polarization measurement with high reproducibility and accuracy.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 695 (1993), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Notes: Forty patients with probable Alzheimer's disease (AD) were selected from a pool of 80 patients and assigned to 4 groups. Each received either social support, cognitive training only, or cognitive training in combination with pyritinol or phosphatidylserine. Treatment duration was 6 months. Before and after treatment the patients underwent neuropsychological testing as well as measurement of the regional cerebral metabolic rate for glucose using positron emission tomography (PET) and 2[18F]-fluoro-2-deoxy-D-glucose (FDG). Before treatment, the groups were comparable in respect to resting and activated glucose pattern achieved by a visual recognition task. They did not differ in scores of a neuropsychological test battery. After the treatment period the group with cognitive training + phosphatidylserine showed a significant glucose enhancement during the stimulation tasks in various brain regions, and an improvement in cognitive functioning compared to the other groups. The group with cognitive training + pyritinol had better stimulation effect as that of the social support group indicating that a combination of cognitive training + pharmacological intervention was superior than that of cognitive training alone.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 251 (1972), S. 354-364 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The spin polarization of photoelectrons emitted by alkali surfaces illuminated with monochromatic circularly polarized radiation has been observed. Maximum spin polarization of 4.5% is obtained with cesium at a wavelength of about 4500 Å. Both maximum spin polarization and the wavelength of the maximum decrease monotonically with decreasing atomic number. The spin polarization is zero within experimental errors, in the case of solid sodium and lithium.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 252 (1972), S. 141-146 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract At energies above ∼ 50 eV, electrons scattered inelastically from mercury atoms show a similarity to elastically scattered electrons in both spin polarization and angular distribution. This similarity vanishes at primary energies below ∼ 30 eV for the 6p′3 P 1-channel (11.0 eV energy loss) and below∼ 25 eV for the 61 P 1-channel (6.7 eV energy loss).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 241 (1971), S. 355-368 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Measurements of electron spin polarization resulting from inelastic electron scattering by mercury (excitation of the 61 P 1 state, 6.7 eV energy loss) are reported. Differential cross sections and angular dependences of the polarization have been measured for incident energies of 25, 30, 50 and 180 eV.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 242 (1971), S. 86-92 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The method of ion-implantation is applied to doping thin lead films with small amounts of manganese. The incident ion intensity is integrated to determine the concentration of magnetic impurities. A marked increase in film resistivity is caused by radiation damage induced in the host lattice and by resonance scattering of conduction electrons on the magnetic impurity sites. Both effects can be observed separately.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Differential cross sections and spin polarization of low-energy electrons elastically scattered by Sb4-molecules have been measured between 50 and 1000 eV from 20 to 150° and have been calculated theoretically on the basis of the independent-atom model (IAM). The interatomic distance in the Sb4-molecule is found to be 2.9±0.1 Å. In spite of its simple assumptions the IAM gives an acceptable description of the scattering at energies 〉 100 eV, except for the deep minima of the cross section and the sharp maxima of the polarization, where intramolecular plural scattering plays an important role. At energies 〈 100 eV this simple theoretical description breaks down, since here the atomic scattering amplitudes become defective and the IAM ceases to be applicable. Better results can still be obtained if a pseudopotential simulating exchange according to Yates is used in addition to the atomic potential for calculating the atomic scattering amplitudes. Despite of considerable improvement, however, the theoretical results remain unsatisfactory at 50 eV, an indication that the IAM is no longer valid. The importance of the exchange pseudopotential, which has a considerably larger range than the atomic potential, shows that at smaller energies the outer tail of the potential becomes relevant for the atomic scattering amplitudes. Then, because of the close vicinity of the atoms in the molecule, the IAM is no longer able to describe the molecular scattering correctly.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 245 (1971), S. 283-294 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Ion-implantation is a useful method when preparing dilute alloys, especially of elements with very low solubility like 3d-transition-elements in most non-transition superconductors. A strong decrease inT c and an increase in the residual resistivity were observed in Pb- and Sn-films doped with Mn-ions. Nonlinearity in theT c -dependence which was found at very low concentrations (0-100 ppm) is caused by lattice defects. They cannot be avoided if implantation method is used. This was proved by irradiation with nonmagnetic ions of comparable mass (such as Cu or Zn). The linear part in theT c -depression is compared with results obtained with the quenched film technique by Barth (Pb-Mn) and Schertel (Sn-Mn). A discrepancy to these measurements is found in the case of Sn-Mn. The increase in film resistivity is due to lattice defects as well as magnetic impurities. The magnetic contribution (p/c) m =(4.5 ± 0.2) μΩ cm/at-% agrees well with a theoretical calculation. Heavily doped Sn-films show a small Kondo-resistance-minimum at 7 K with a depth of 2.5‰ of the residual resistivity.
    Type of Medium: Electronic Resource
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