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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7389-7394 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin InxGa1−xAs layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle (∼2.0°). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed by the dynamical diffraction theory. The critical thickness for an InGaAs layer embedded in GaAs obtained from x-ray data is shown to be larger than that predicted by the force balance model. The strain tensors as a function of layer thickness are also analyzed for the buried InxGa1−xAs of different x values.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5881-5883 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical, electrical, and magnetic properties of magnetic Nd15Fe77B8 and nonmagnetic Nd5Fe62B33 films have been investigated. It has been found that within the visible (wavelengths 4400–6400 A(ring)) the films are transparent with thickness less than 800 A(ring) for magnetic films and 1500 A(ring) for nonmagnetic films. This is due to the difference of the magnetic permeability μ between films. The oscillatory behavior with thickness of the films is observed in the film samples. The anomalous behaviors near the Curie temperature for both bulk- and film-type samples are similar to that of the type-III ferromagnets. The temperature at which the electrical resistance of the film-type samples increases abruptly varies from 620 K for 1000 A(ring) to 650 K for 2000 A(ring).
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 647-650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical properties of high density electron gas in GaAs/Al0.3Ga0.7As modulation doped quantum wells by using the photoluminescence measurements with the pumping photon energies above and below the band gap of the barrier and the resonant Raman scattering. We point out that the previous assignment of the transition between the second conduction subband and the ground-state heavy-hole subband in the photoluminescence spectra may be flawed. Thus, there is no large breakdown of the parity selection rule of the optical matrix element in quantum wells even if the carrier concentration is as high as 1012 cm−2. Our results are consistent with the theoretical investigation. We have also estimated the band gap shrinkages due to many-body interactions, which are comparable with the previous calculations.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6796-6803 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the particle-particle interaction in a chain of spherical particles in an electrorheological (ER) fluid is developed based on an expansion of the potential which satisfies the Laplace equation. The electric-field distribution and force-distance relationship between particles are calculated as a function of Kp/Kf (the dielectric constant of the sphere relative to that of the medium) and particle-particle spacing using this model. The calculations predict electric-field concentrations of about an order of magnitude near particle contacts. This gives a force between particles that is approximately an order of magnitude higher than predicted by the classical point-dipole approximation, and is in reasonable agreement with that measured experimentally. Subtle effects of the carrier fluid on the interaction force and an explanation for the non-Ohmic behavior of ER fluids are deduced in terms of its dielectric constant and dielectric strength.
    Type of Medium: Electronic Resource
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  • 15
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the growth and device characteristics of In0.53+x Ga0.47−x As/ In0.52 Al0.48 As (0≤x≤0.27) pseudomorphic modulation-doped field-effect transistors on InP substrates. In situ reflection high energy electron diffraction oscillation studies were carried out to study the growth of pseudomorphic InGaAs on GaAs and InP substrates. The data from these measurements and a theoretical formalism based on energy minimization suggest that in the pseudomorphic growth regime increased strain causes growth modes to change from two-dimensional layer-by-layer to a three-dimensional island mode. The resulting interface roughness is used as a parameter to explain the observed trends in channel mobility and device performance. It is also shown that altered growth techniques, such as migration enhanced epitaxy, in which the surface reconstruction may be changed, can restore the layer-by-layer growth mode for large amounts of strain in the pseudomorphic layer.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1007-1012 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two models of flux motion are employed to study the resistive properties of superconducting YBa2Cu3 O7−x thin films. The thermally activated flux creep model is employed to explain the dissipative behavior in the low resistivity region. However, when the resistivity is raised and approaches the normal state resistivity, the dissipative mechanism is gradually transferred from flux creep to flux flow. Based on the flux flow model, the upper critical field is estimated and shown as a function of temperature. In addition, a parallel resistivity circuit model is proposed to describe the transition behavior of the magnetic field dependence of resistivity versus current density characteristics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2499-2502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attractive-mode atomic force microscope is described in which the cantilever is held orthogonally with respect to the sample. The technique utilizes a linear differential optical detection scheme for the cantilever vibrations. In this design, the cantilever end is not bent to form a tip. This geometry substantially reduces the possibility of spontaneous jump-to-contact of the tip onto the sample, allowing the tip/sample separation to be set essentially to any desired value. Relatively large- and small-scale results are presented on imaging a smear of red blood cells, demonstrating the resolution and sensitivity.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 509-511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 1015 cm−3 for samples with a carrier concentration of 1016 cm−3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm−3 and of the carrier concentration to 1015 cm−3.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4832-4834 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variations of the grain-boundary precipitates, the electrical resistivity, and the magnetization of a Ni-8 at. % Sn alloy have been investigated as functions of annealing temperature and annealing time. For samples annealed at 773 K, the averaged growth rate of the size of the grain-boundary precipitates is roughly 0.42 μm/h for the first 24 h; the electrical resistivity at T=10 K and the magnetization at T=10 K and H=5 kG vary monotonically with respect to the annealing time for the first 2 weeks, changing from 22.5 to 7 μΩ cm for the electrical resistivity and from 27 to 33 emu/g for the magnetization. A large tail section in the magnetization versus temperature curve was also observed in the aged samples. All these electrical and magnetic variations in the Ni-8 at. % Sn samples annealed at 773 K varied monotonically with respect to the growth of the grain-boundary precipitates.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2536-2547 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reactions of H atoms with N2O have two product channels yielding NH+NO and OH+N2. Both channels were observed via NH A 3Π←X 3∑ and OH A 2∑←X 2Π laser-induced fluorescence spectra. Photoinitiated reactions with N2O–HI complexes yield a much lower [NH]/[OH] ratio than under the corresponding bulk conditions at the same photolysis wavelength. For hot D-atom reactions with N2O, this effect is somewhat more pronounced. These results can be interpreted in terms of entrance channel geometric specificity, namely, biasing hydrogen attack toward the oxygen. Another striking observation is that the OH and OD rotational level distributions (RLD) obtained under bulk conditions differ markedly from those obtained under complexed conditions, while the NH as well as the ND RLD are similar for the two environments. In addition, OH Doppler profiles change considerably in going from bulk to complexed conditions, while such an effect is not observed for NH. The changes observed with the OH RLD are most likely due to OH–halogen interactions and/or entrance channel specificity. Under bulk conditions, the Doppler shift measurements indicate a large amount of N2 internal excitation (i.e., ∼25 000 cm−1) for the OH (v=0) levels monitored. This is consistent with a reaction mechanism involving an HNNO° intermediate. The hot hydrogen atom first attaches to the terminal nitrogen of N2O and forms an excited HNNO° intermediate having a relatively elongated N–N bond compared with N2O. Then the H atom migrates from nitrogen to oxygen and exits to the N2+OH product channel, leaving N2 vibrationally excited. A simple Franck–Condon model can reconcile quantitatively the large amount of N2 vibrational excitation.
    Type of Medium: Electronic Resource
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