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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isotropic assemblies of hard and soft magnetic phases in nanocrystalline form have been produced by high energy ball milling and melt spinning. These materials exhibit remanence enhancement, i.e., the remanence exceeds 0.5Msat, the value expected of an isotropic material. The phenomenon has been investigated using models in which interaction energy across the interfaces between magnetically hard and soft components is taken into account. An example of such a two-dimensional model will be discussed. Measurements have been made of the magnetic properties of SmFeN, Sm(Fe,Co), and NdFeB two phase nanocrystalline materials. All of them exhibit remanence enhancement. The time dependent behavior of materials exhibiting remanence enhancement is unusual. Magnetic viscosity occurs on both branches of recoil loops as well as on the initial magnetizing and demagnetizing curves.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Krätschmer–Huffman carbon-arc method of preparing fullerenes has been used to generate carbon-coated transition metal (TM) and TM-carbide nanocrystallites. The magnetic nanocrystallites were extracted from the soot with a magnetic gradient field technique. For TM=Co the majority of nanocrystals exist as nominally spherical particles, 0.5–5 nm in radius. Hysteretic and temperature-dependent magnetic response, in randomly and magnetically aligned powder samples frozen in epoxy, correspond to fine particle magnetism associated with monodomain TM particles. The magnetization exhibits a unique functional dependence on H/T, and hysteresis below a blocking temperature TB. Below TB, the temperature dependence of the coercivity can be expressed as Hc=Hc0[1−(T/TB)1/2], where Hc0 is the 0 K coercivity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 3384-3393 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fluorescence excitation, dispersed fluorescence, and picosecond time-resolved fluorescence spectroscopies have been used to study the dimeric molecule 9,9'-bifluorenyl, isolated under supersonic jet conditions. The excitation spectrum reveals a splitting in several principal resonances of the S0→S1 excitation spectrum, which can be attributed to electronic coupling between the two fluorenyl moieties. The splitting, which for different vibronic transitions correlates with Franck–Condon factors, is consistent with an exciton model that includes higher electronic states. The splitting is reasonably well reproduced by a multipole interaction potential. Calculations have verified that the electron exchange coupling is small. Furthermore, the relative intensities of the resonances allow an estimate of the equilibrium geometry, suggesting that the molecular long axes have an angular displacement of 60°–70°, consistent with the geometry found by x-ray diffraction. A most interesting feature of this species is that it is weakly fluorescent in fluid solution, which has been attributed to activated conformational barrier crossing of the excited molecule. In contrast, the fluorescence quantum efficiency of the isolated molecule can be close to unity, the lifetime ranging from 18 to 20 ns at vibrational energies 〈1400 cm−1. Above this region, the fluorescence decay time decreases steadily, to ≈2 ns by 2550 cm−1, indicating the onset of a nonradiative relaxation channel. Since the molecule was also seen to exhibit vibrational relaxation at low energies (i.e., ≤400 cm−1), the relaxation dynamics observed above 1400 cm−1 reflect the existence of a conformational potential energy barrier in the isolated molecule.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The realization of collector-up light-emitting complementary charge injection transistors is reported. The devices have been implemented in molecular-beam-epitaxy-grown n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures using a self-aligned process for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or InP) by the real-space transfer (RST) process, luminesce in the low-doped p-type InGaAs active layer. An essential feature of present devices, besides their self-aligned collector-up configuration, is a relatively heavy doping of the n-type emitter channel, with the sheet dopant concentration of 4×1012 cm−2. This ensures a higher uniformity of the electric field in the channel and provides a relief from RST instabilities at a high level of collector current (linear density ∼10 A/cm). Devices with InAlAs and InP barriers show rather different optical characteristics, mainly due to the different band lineups ΔEC/ΔEV in InGaAs/InAlAs and InGaAs/InP heterostructures, leading to different ratios between the RST current and the parasitic leakage of holes from the collector into the channel. At high RST current densities, the effective carrier temperature Te in the active collector layer, determined from the high-energy tails of the luminescence spectra, is strongly enhanced compared to the lattice temperature. This decreases the device radiative efficiency and leads to a thermionic emission of carriers out of the active layer.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1864-1873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistance and structural stabilities of the epitaxial CoSi2 films, grown on (001) Si substrates using sequentially deposited Ti-Co bimetallic layer source materials, have been investigated by further anneals under extended conditions. In contrast to reported polycrystalline silicide film cases, the epitaxial CoSi2 films are very stable under the additional rapid thermal annealing treatment at 1100 °C for times from 10 to 60 s. This means that such CoSi2 films are able to stand the further heat treatment required in the ultralarge-scale integration regime of Si integrated circuit fabrication. The quality of the further annealed films has been actually improved: The film resistivity has decreased to reach a value as low as 10 μΩ cm, and the film structure has become more perfect, e.g., the densities of antiphase domains and film-Si interface facets have been decreased. For technological applications, it is necessary to remove the Ti-Co-Si alloy layer formed concomitantly on top of the as-grown CoSi2 film. This has been accomplished by chemical etching using the standard buffered oxide etch solution. In the present experiment, as-grown epitaxial CoSi2 films with and without the Ti-Co-Si alloy top layers have been both included and the same film resistance and structural stabilities have been observed. Thus, the excellent resistance and structural thermal stabilities of the present CoSi2 films result from the single-crystal nature of the films and not the effect of the top Ti-Co-Si capping layer. Mechanisms responsible for the excellent quality of the epitaxial CoSi2 films, as well as for the unacceptable quality of the polycrystalline silicide films, have been discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 493-501 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light-emitting properties of rapid thermally oxidized porous Si are studied by both photoluminescence and cathodoluminescence methods. The structure of the material is examined by transmission electron microscopy, while its oxygen content is determined by x-ray microanalysis. These investigations show that crystalline Si nanostructures remain in the heavily oxidized porous material and account for its ∼750 nm red photo- and cathodoluminescence. The work demonstrates that the previously speculated possible importance of either Si-based amorphous phases or the interesting material, siloxene, in this regard is unrealistic. Furthermore, it is shown that the luminescence properties of silicon oxides are of paramount importance in interpreting the many additional (shorter wavelength) emission bands observed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7579-7587 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using coevaporated Ti-Co alloy and sequentially evaporated Ti-Co bimetallic layer source materials, CoSi2 films have been grown on (001) Si. The film resistivity and resistance thermal stability are excellent. The CoSi2 are epitaxial single-crystal films containing antiphase domains in the Ti-Co bimetallic layer cases and are polycrystalline films containing a substantial portion of epitaxial grains in the Ti-Co alloy cases. The epitaxial or substantially epitaxial nature of these CoSi2 films is the reason for the excellence in the film resistivity and resistance thermal stability. We believe that the epitaxial nature of the CoSi2 films results from two roles played by Ti. In the first, Ti served as a getterer for removing the native oxide layer on the Si wafer surfaces, which causes the nucleation of CoSi2 grains with random orientations. In the second, Ti silicides formed in the early stage of the annealing process served as Co diffusion barriers preventing Co2Si and CoSi formation, which would also lead to the formation of randomly oriented CoSi2 grains. Models of the interfacial structure of the epitaxial CoSi2 film and Si substrate have been constructed for [001] and [111] orientations. These models revealed that antiphase boundaries serve the role of relieving the lattice mismatch between the epitaxial CoSi2 film and Si substrate.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1279-1286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of differential ion damage in AlAs-GaAs epitaxial heterostructures is explored using conventional and high-resolution transmission electron microscopy, together with Rutherford backscattering spectrometry. By use of Si+ ion implantation, the rapid buildup of lattice damage in GaAs, and the relative resistance of AlAs to structure breakdown is highlighted. The ion dose levels required for bulk amorphization of the two materials differ by at least two orders of magnitude. The way in which lattice disorder changes near the AlAs/GaAs interface is studied in detail and it is demonstrated that the AlAs layer, which remains crystalline up to high ion doses, promotes in situ annealing of narrow zones of GaAs crystal adjacent to both of its interfaces. These crystalline GaAs zones show substantially enhanced resistance to ion damage accumulation but they contain planar defects and are finally rendered amorphous after extended ion bombardment. During this process, defects propagate into the edges of the AlAs layer which are then progressively amorphized in an apparently heterogeneous (boundary-dependent) manner. In addition, it is shown that GaAs in other regions of the sample is amorphized by a mechanism which at first leaves nanometer-scale blocks of crystal isolated within the newly formed amorphous material, although these blocks are then rapidly broken down by further bombardment. The way in which the implantation-damaged layers restructure during annealing treatment is also described. Up to ∼320 nm of amorphous GaAs beneath the AlAs layer can be regrown as a single crystal by the motion of two opposing growth interfaces during annealing at 800 °C.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 31 (1992), S. 1118-1120 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1922-1926 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A four-dimensional histogramming data acquisition system has been developed for use on an 80386 IBM-compatible computer. The method has a large data storage capacity providing good experimental resolution and system flexibility. A custom-built analog-to-digital board generates a memory address in hardware from the incoming data which permit the use of a simple and elegant histogramming algorithm. The system is used to collect and analyze data from (e,2e) experiments. Results from coplanar symmetric (e,2e) experiments on argon, at an incident energy of 3 keV, are presented to demonstrate the performance of the instrument. The method is applicable to experiments where data from several sources have to be combined and then histogrammed in real time.
    Type of Medium: Electronic Resource
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