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  • 1990-1994  (9)
  • 1930-1934  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 515-517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A full-wave analysis of the dispersion in coplanar-type transmission lines is made including the effect of material dispersion arising from a frequency-dependent complex dielectric constant such as due to optical phonon resonances in the substrate. The results are used to examine the distortion of femtosecond electrical pulses propagating in coplanar striplines made on ultrathin as well as thick GaAs substrates. A new closed-form dispersion formula for coplanar lines is also reported, valid for complex dielectric constants and all values of frequency and line dimensions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3088-3090 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of carrier escape time on the performance of semi-insulating photorefractive self-electro-optic effect devices by investigating three samples of Cr-doped GaAs/AlxGa1−xAs multiple quantum wells of varying barrier thickness and height. Reduction of barrier thickness from 100 to 35 A(ring) and Al fraction from 0.42 to 0.29 results in a three orders of magnitude increase in diffraction efficiency at a given voltage. The effect of shorter carrier escape and sweep-out times on the diffraction efficiency, resolution, and sensitivity of these devices is discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2009-2011 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report generation of coherent terahertz electromagnetic transients from GaAs/Al0.3Ga0.7As quantum wells in perpendicular fields. Although, at low temperature, the quantum well barriers suppress the transport current perpendicular to the layers by at least two orders of magnitude compared to bulk, we observe terahertz signals that are comparable in strength to those generated from bulk GaAs surfaces. This directly proves that the field-induced polarization of photoexcited electron-hole pairs is an important mechanism for the generation of terahertz radiation at semiconductor surfaces.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 742-744 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the reduction of power dissipation in absorptive semiconductor optical modulators via reduction in photocurrent. We present experimental results for proton implantation of p-i-n-multiple-quantum-well modulators to levels of 1×1012 , 1×1013, and 1×1014 cm−2. We find that photocurrent can be significantly reduced with moderate reduction in modulation performance relative to the unimplanted device. Application to asymmetric self-electro-optic devices is demonstrated.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 464-466 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating multiple quantum well photorefractive devices using GaAs/Al0.29Ga0.71As with an electric field applied perpendicular to the layers are demonstrated. Semi-insulating behavior is obtained by doping with Cr(1016/cm3) during epitaxial growth of the material. Diffraction efficiencies as high as 3% with an applied voltage of 20 V and microsecond response times are obtained in a 2 μm thick device. These devices are of importance for implementation of fast and sensitive two-dimensional optical information processing systems at wavelengths compatible with current diode lasers without the spatial-bandwidth limitations of thick photorefractive materials.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 52 (1930), S. 1565-1570 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1491-1493 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that GaAs-AlGaAs quantum wells grown at low temperature (300 °C) by molecular beam epitaxy are nearly semi-insulating and exhibit a broadened excitonic resonance. Studies of the femtosecond time-resolved nonlinear optical saturation response and parallel-field transport properties indicate that a subpicosecond nonradiative decay dominates the carrier recombination of this material. Annealing of low-temperature-grown quantum wells causes the arsenic point defects to form arsenic metallic precipitates within the quantum wells and up-shifts the absorption edge.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 58 (1994), S. 225-235 
    ISSN: 1432-0649
    Keywords: 42.10.-s ; 42.20.-p ; 42.65.Re
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Dispersive phenomena provide limits in the generation, measurement and applications of femtosecond optical pulses. Optical elements such as prisms, gratings, air, mirrors, filters, and laser crystals all contribute to the total dispersion in optical systems. Interferometric techniques enable measurements of dispersion of individual elements, and new techniques allow dispersion measurement inside the cavity of operating modelocked femtosecond tunable lasers. These techniques provide access to detailed information about dispersion errors which can distort pulses and produce undesirable effects in modelocked lasers. In this article, we review techniques for the measurement of dispersion in optical components and systems. In several cases, we compare measurements made with intracavity dispersion techniques with extracavity measurements and point out common features.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 53 (1991), S. 503-513 
    ISSN: 1432-0630
    Keywords: 71.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ultrafast nonlinear optical properties of quantum well excitons have been studied extensively in recent years. Quantum well excitons, which are sharp and well-resolved at room temperature, are well suited to optoelectronics applications, having large electroabsorption response. In this review, we discuss experiments which use simultaneously the nonlinear optical response of the quantum well exciton and the electroabsorption response in order to characterize electrical signals in the femtosecond time scale. In addition, we discuss intrinsic speed limitations in excitonic optoelectronics and extensions to one- and two-dimensional spatiotemporal field mapping.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 53 (1991), S. 491-502 
    ISSN: 1432-0630
    Keywords: 71.35 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We discuss the evolution of optical properties of semiconductor quantum wells, as the quasi-two-dimensional electronic states are further confined into quasi-zero dimensions by a perpendicular magnetic field. We show that confinement in all three directions strongly modifies both linear and nonlinear optical response. In particular, quasi-zero-dimensionality makes an ensemble of magneto-excitons a unique many-body system, distinct from higher-dimensional excitons and the one-component Coulomb system in the fractional quantum Hall regime or Wigner crystal.
    Type of Medium: Electronic Resource
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