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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3661-3665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale pattern generation on III-V semiconductor substrates using a scanning tunneling microscope (STM) operating in air is demonstrated. The sample substrates, consisting of arsenic-capped, epitaxial layers of n-doped GaAs, AlxGa1−xAs and InyGa1−yAs were prepared by molecular beam epitaxy and characterized by time-of-flight secondary-ion mass spectrometry and x-ray photoelectron spectroscopy. The direct patterning of features of width ≤50 nm on GaAs and In0.2Ga0.8As surfaces is shown to be the result of the formation of a strongly bonded surface oxide induced under high electric field conditions existing between the scan tip and the substrate. The significance of STM pattern generation of nanometer-scale oxide masks for use in the fabrication of low-dimensional heterostructures is discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 490-495 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2437-2439 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective-area epitaxial growth of gallium arsenide on n-Si(100) substrates is reported, where the oxide (SiOx) mask consists of 1–2 monolayer-thick features patterned onto a silicon substrate using a scanning tunneling microscope (STM) operating in air. The technique for generating the STM patterns on hydrogen-passivated silicon was reported recently [J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990)]. The GaAs epilayer was grown by migration-enhanced epitaxy at 580 °C and its morphology was investigated by scanning electron microscopy. The chemical selectivity of the STM-patterned regions was verified by imaging time-of-flight secondary-ion mass spectrometry. The implications of these results for the development of a unique, STM-based nanostructure fabrication technology are discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2001-2003 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical modification of hydrogen-passivated n-Si (111) surfaces by a scanning tunneling microscope (STM) operating in air is reported. The modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary-ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy. Comparison of STM images with SEM, TOF SIMS, and optical information indicates that the STM contrast mechanism of these features arises entirely from electronic structure effects rather than from topographical differences between the modified and unmodified substrate. No surface modification was observed in a nitrogen ambient. Direct writing of features with 100 nm resolution was demonstrated. The permanence of these features was verified by SEM imaging after three months storage in air. The results suggest that field-enhanced oxidation/diffusion occurs at the tip-substrate interface in the presence of oxygen.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3288-3290 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel method of GaAs substrate preparation which imparts significantly improved topographical and chemical uniformity to the surface. The procedure, employing an aqueous P2S5/(NH4)2S solution, leaves the surface in a highly ordered state and resistant to air oxidation for periods of a day or more without the presence of foreign chemical layer such as sulfur. Surface quality was determined by scanning tunneling microscopy (STM), time-of-flight secondary ion mass spectrometry, reflection high-energy electron diffraction, and x-ray photoelectron spectroscopy. The remarkable stability and smoothness of treated III-V surfaces is illustrated by STM imaging of an Al0.51Ga0.49As/GaAs superlattice in air. The superlattice consisted of periodic alternating AlGaAs/GaAs layers of various thicknesses from 10 to 1000 nm.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1802-1804 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have optically written persistent but erasable metallic features in insulating epilayers of AlxGa1−xAs doped with Si and Se, which form DX centers. The photocarriers, which remain in the AlxGa1−xAs layer, move freely in the conduction band but are confined to the exposed regions. We demonstrate this confinement by optical excitation in a striped pattern; the resulting modulation of the free carrier density is evinced by an anisotropy of the sample conductance parallel and perpendicular to the stripes. The anisotropy, like the photoconductivity itself, is persistent at low temperatures. Erasure is achieved by thermal annealing. We estimate that features can be written with better than 1000 A(ring) resolution. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Alimentary pharmacology & therapeutics 6 (1992), S. 0 
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Fifty-nine consecutive patients admitted for colonoscopy were randomized to receive polyethylene glycol or sodium picosulphate. Patients expressed their opinion in a questionnaire and the endoscopists, blinded to the preparation, assessed the cleanliness of different segments of the colon.There was no statistically significant difference in the taste-acceptability of the preparations, frequency of nausea, abdominal pain, peri-anal soreness or sleep disturbance between the two groups. Polyethylene glycol caused vomiting in 13% of patients while this was absent in those who received sodium picosulphate (P 〈 0.05).The average number of stools passed was 12.4 in the polyethylene glycol and 8.6 in the sodium picosulphate groups; mean difference 3.8 (95% C.I. 0.7–6.9) with P 〈 0.02. The overall cleanliness of the colon was better in the polyethylene glycol group (P= 0.002) as judged by the blinded colonoscopist. There was less delay (P= 0.06) and more completed colonoscopies (P= 0.01) in this group. Polyethylene glycol was a better preparation in all segments of the colon except the rectum.We conclude that polyethylene glycol is the choice of the colonoscopist and should be given to all patients; sodium picosulphate would be a good alternative if patients are intolerant. If a limited colonoscopy or flexible sigmoidoscopy is intended, sodium picosulphate may be preferred because of its acceptable efficacy and slightly advantageous side-effect profile.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 710 (1994), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Plant Physiology and Plant Molecular Biology 42 (1991), S. 281-311 
    ISSN: 1040-2519
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 47 (1992), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The experience of Advanced Trauma Life Support training received by three anaesthetists is discussed with particular reference to the teaching of airway management, the grade of staff who should attend the present courses and the relevance to the British hospital system. We conclude that these courses are useful but limited by their inflexibility and failure to recognise the difference in skill mix in the British setting.
    Type of Medium: Electronic Resource
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