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Hole subband in p-type channel of semiconductor heterostructures (1994)

Liu, Kun ; Chu, J. H. ; Ou, H. J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 7998-8000

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Based on the characteristics of semiconductor surface capacitance, an experimental model is presented for evaluating the hole subband structures in the p-type channel of semiconductor heterostructures. For an n-type InSb metal-oxide-semiconductor sample, the capacitance-voltage spectroscopy is measured and the hole subband structure is derived with using the model presented. The result shows that the Fermi level is always pinned near the bottom of the hole subband, which is attributed to the large density of states of the hole subband. Relevant parameters are also obtained for the hole subband including the subband energy, Fermi level, inversion layer width, and depletion layer width, etc. © 1994 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357914

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Digitale Medien

Composition and temperature dependence of the refractive index in Hg1−xCdxTe (1994)

Liu, Kun ; Chu, J. H. ; Tang, D. Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 4176-4179

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The intrinsic absorption spectra for very thin Hg1−xCdxTe bulk samples with compositions x ranging from 0.276 to 0.443 have been obtained at different temperatures. Based on the measured absorption curves and Kramers–Kronig relation, the refractive index dispersion has been calculated in the wavelength region near and below the band gap at temperatures from 4.2 to 300 K. For Hg1−xCdxTe samples with x from 0.276 to 0.443, the dispersion relation can be described by an empirical formula: n(λ,T)2=A+B/[1−(C/λ)2]+Dλ2, where the parameters A, B, C, and D are both temperature and composition dependent. In addition, a peak in the deduced dispersion spectra appears just at the wavelength corresponding to the band-gap energy Eg(x,T) of Hg1−xCdxTe.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.356001

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Phase dynamics of a detuned single-mode laser (1992)

Tang, D. Y. ; Weiss, C. O.

Springer

Applied physics 55 (1992), S. 104-108

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ISSN: 1432-0649

Schlagwort(e): 42.50.Lc ; 05.45.+b

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract We report measurements on the phase dynamics of a detuned single mode laser which has in the past shown correspondence to the complex Lorenz equation. The corresponding ranges of periodic pulsing, of detuned chaos and of windows within the chaotic domain are investigated.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00324058

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