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  • 1
    Electronic Resource
    Electronic Resource
    Sensitivity study of partial response maximum likelihood and peak detection channels to contamination buildup on air bearing surface of proximity recording sliders : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5402-5404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates experimentally the sensitivity of partial response maximum likelihood (PRML) and peak detection channels on the increased head-disk spacing caused by the contamination buildup on the slider's air bearing surfaces (ABS). Results obtained indicate that the peak detection channel is sensitive to both the Transition Effect (writing at increased head-disk spacing) and the Readout Resolution Effect (reading at increased head-disk spacing). The increased error rate detected in peak detection channel at increased head-disk spacing can be reduced significantly if the spacing is resumed to normal. In fact, the influence of the transition effect on the peak detection channel is more significant than the readout resolution effect. The PRML channel, however, is mostly sensitive to the transition effect only. The resolution effect, conversely, has rather limited impact on the PRML channel. Off-track sensitivity studies shows that peak shift in the peak detection channel becomes more sensitive to off-track positions when the head-disk spacing is increased. The nonlinear transition shift in the PRML channel, on the contrary, is far less sensitive to the off-track of magnetic head, even when the spacing is increased by the contamination buildup. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364553
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 3
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 4
    Electronic Resource
    Electronic Resource
    Bit-shift performance investigations at different skew angles and for different media orientations : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5649-5651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bit-shift performance was investigated at different skew angles and for media with different orientation. Results indicate that the bit-shift value increases as the skew angle increases for both planar orientated media and near-isotropic media. As the skew angle increases, the off-track capability, described by the bit shift at different off-track distances, decreases and the bit-shift profile becomes asymmetric. Comparison of normalized bit-shift values (normalized according to the bit shift at 0° skew angle) shows that the bit shift of the near-isotropic media is not as sensitive to skew angle variation as the media with strong orientation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362270
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  • 5
    Electronic Resource
    Electronic Resource
    Ring insertion reactions of silaaziridines with aldehydes and isocyanates (1993)
    s.l. : American Chemical Society
    Organometallics 12 (1993), S. 529-534 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00026a040
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4527-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon is investigated analytically. It is found that, whereas in long-time/high-temperature oxidation the interstitial supersaturation and the diffusivity enhancement decrease with time as t−n (n(approximately-equal-to)0.2–0.3), in short-time low-temperature oxidation they start from zero and increase with time, until some characteristic time determined by the linear-parabolic oxide growth. This characteristic time increases rapidly with the decrease of temperature. This kinetic behavior has not been expected previously, mainly because there is no available data on stacking fault growth and on diffusion enhancement under the short-time/low-temperature condition which has become common in modern IC processings. The more general case of linear-parabolic oxidation and the effect of bulk recombination have also been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335353
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  • 7
    Electronic Resource
    Electronic Resource
    Stress from a parallelepipedic thermal inclusion in a semispace (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2741-2743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many problems concerning stress arising from the embedding of a foreign body in a semi-infinite matrix can be described as thermal inclusion involving a single or an assemblage of parallelepipedic elements. Because of its basic usefulness, we present an analytical solution to the problem of a parallelepipedic thermal inclusion in a three-dimensional semispace. Application of this solution to the currently important problem of trench isolations in integrated circuits will be presented separately elsewhere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344194
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of process parameters on stress development in two-dimensional oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 323-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified viscoelastic analysis has been made of the stress evolution during two-dimensional (2D) oxidation of silicon substrates, with the objective of learning the effect of process parameters such as temperature and steam pressure. A cylindrical silicon surface was chosen for simplicity of analysis, and yet it still has most of the essential elements pertinent to practical problems such as, e.g., the oxidation of trench corners in silicon integrated circuits. With correlations between the viscosity and the hydroxyl content of SiO2, and between the hydroxyl content and the steam pressure, the analysis shows that stress reduction can be achieved by carrying out oxidation at high steam pressures. However, stresses remain rather high if the oxidation temperature is as low as 800 °C. For a linear-parabolic oxidation kinetics, both the oxide and the substrate stresses do not increase indefinitely with the increase of oxide thickness, but reach their respective peaks at oxide thicknesses that are dependent on process parameters. The present results should be useful in serving as guidelines in the selection of 2D oxidation conditions. The accuracy of a previous 2D oxidation model based on the viscous flow of an incompressible fluid has also been assessed with reference to the viscoelastic model. The incompressible-fluid model is found to be quite accurate at high temperatures (approximately-greater-than)900 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341430
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 69, 7901 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4009-4009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349174
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  • 10
    Electronic Resource
    Electronic Resource
    Stress-related problems in silicon technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 53 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon integrated-circuits chip is built by contiguously embedding, butting, and overlaying structural elements of a large variety of materials of different elastic and thermal properties. Stress develops in the thermal cycling of the chip. Furthermore, many structural elements such as CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc., by virtue of their formation processes, exhibit intrinsic stresses. Large localized stresses are induced in the silicon substrate near the edges and corners of such structural elements. Oxidation of nonplanar silicon surfaces produces another kind of stress that can be very damaging, especially at low oxidation temperatures. Mismatch of atomic sizes between dopants and the silicon, and heteroepitaxy produce another class of strain that can lead to the formation of misfit dislocations. Here we review the achievements to date in understanding and modeling these diverse stress problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349282
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