Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3077-3081
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Minority-carrier recombination lifetime was measured with a noncontact laser/microwave method for nondiffused and iron-diffused p-type silicon wafers in the temperature range from 28 °C to 230 °C. The lifetime increased monotonically with temperature in nondiffused silicon, while the lifetime in iron-diffused silicon showed a broad peak around 110 °C and a depression around 170 °C. The temperature dependence of the lifetime in iron-diffused silicon was analyzed based on Shockley–Read–Hall statistics. The origin of the lifetime temperature dependence was attributed to the dissociation of iron-boron pairs. Our experimental data supported that an electron trap for an iron-boron pair at Ec−0.29 eV was more effective as a recombination center than a hole trap at Ev + 0.1 eV. It was also shown that the effect of iron in concentrations as low as 1×1011 cm−3 on the lifetime can be detected with the noncontact laser/microwave method.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348570
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