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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3705-3707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of oxide precipitate nuclei has been investigated for Czochralski silicon crystals with nitrogen doping. The experimental result indicates that generation of the grown-in oxide precipitate nuclei stable over 800 °C is enhanced by nitrogen doping. On the other hand, even though we confirmed this existence, doped nitrogen shows no influence on further oxide precipitate nucleation during the isothermal annealing at 600 °C after an epitaxial silicon growth process. Thus, it is found that the nitrogen doping only enhances the oxide precipitate nucleation at higher temperature during crystal cooling. The enhanced precipitate nucleation during the cooling is considered to be through excess vacancies which are suppressed to agglomerate by nitrogen. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288157
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of minority-carrier lifetime in iron-diffused p-type silicon wafers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3077-3081 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority-carrier recombination lifetime was measured with a noncontact laser/microwave method for nondiffused and iron-diffused p-type silicon wafers in the temperature range from 28 °C to 230 °C. The lifetime increased monotonically with temperature in nondiffused silicon, while the lifetime in iron-diffused silicon showed a broad peak around 110 °C and a depression around 170 °C. The temperature dependence of the lifetime in iron-diffused silicon was analyzed based on Shockley–Read–Hall statistics. The origin of the lifetime temperature dependence was attributed to the dissociation of iron-boron pairs. Our experimental data supported that an electron trap for an iron-boron pair at Ec−0.29 eV was more effective as a recombination center than a hole trap at Ev + 0.1 eV. It was also shown that the effect of iron in concentrations as low as 1×1011 cm−3 on the lifetime can be detected with the noncontact laser/microwave method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348570
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    Paper (German National Licenses)
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