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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5926-5928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured Sm–Co-based permanent magnet films which exhibit in-plane anisotropy, with thicknesses ranging from 500 A(ring) to several microns, have been synthesized on polycrystalline Al2O3 substrates. The textured Sm–Co-based films of the disordered TbCu7-type structure were directly crystallized by sputter deposition onto heated substrates. Remanent inductions BR were ≈8 kG, and the intrinsic coercivities, iHc, ranged from 4–10 kOe. The crystallite grain size as a function of film thickness was determined. The use of these films in small scale geometry devices was tested in a sandwich configuration of strips of areal size 7×1 mm2. The Sm–Co films were used to bias Ni81.5Fe18.5 permalloy films. The sandwich permanent magnet was magnetized across its width. The permalloy films were sputter synthesized under conditions very similar to those of the permanent magnet films. Substrate biasing was not used for either the permanent magnet or the permalloy strips. The permalloy films exhibited a well-defined easy axis along the length of the strip. Unbiased, the permalloy showed a maximum magnetoresistance MRmax of 3.0%. On biasing with a 25-μm-thick permanent magnet film with a spacer thickness of 25 μm, the longitudinal biasing field value at MR/MRmax=0.5 was more than a 100 Oe, indicating an average biasing field of the same value.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6064-6066 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayered permanent magnet films with alternating layers differing vastly in anisotropy field and intrinsic coercivity have been sputter synthesized from Sm-Co-based TDK-type 2-17 bulk targets. The basic layer thickness range for which modulated properties can be observed has been investigated from 〈0.1 to (approximately-greater-than)10 μm. The individual layers have been synthesized so as to exhibit high-static-energy product values of ≈15 MGOe. The alternating layers exhibited coercivities around 5 and 15 kOe, respectively, so that for applied reversed fields in the vicinity of 10 kOe the alternating layers have their in-plane magnetizations pointing in opposite directions, reducing the net magnetization to near zero. The magnetic property modulation was accomplished through modulation of the Sm content through sputter process control and the method of crystallization of the alternating layers, without changing either the sputtering targets or substrate positions. For such modulated layer films, the system magnetic energy density in the absence of external fields is a function of the reversed-field value applied after initial in plane saturation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4969-4971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm-Co-based sputtered films have been deposited that exhibit a remanence ratio for hysteresis loops measured out of the plane to in the plane of 0.04. These results have been obtained by thermalized sputtering this system in Ar, Ar+Xe mixtures, and in Xe. The use of Xe has allowed a more efficient thermalization of the massive Sm atoms so that a lower total pressure can be used than if Ar were used alone. The use of Ar-Xe mixtures as the sputtering gas has allowed high-energy product Sm2(Co, Fe, Cu, Zr)17 films with the TbCu7-type crystal structure to be obtained over a much wider range of substrate temperatures and sputtering pressures than has been possible for films sputtered only in Ar. Films sputtered in Ar will show a perpendicular to the in-plane remanence ratio of 0.36 vs 0.04 for Xe. The slope of the hysteresis loops was nearly linear from +18 to −4.5 kOe with values of −0.7%/kOe for the Xe films and a value of −1.2%/kOe for the Ar films. All of these films were directly crystallized onto heated substrates, which is necessary to control the crystal texturing.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2014-2021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer poly(p-phenylene biphenyltetracarboximide) (BPDA-PDA) polyimide films of 172 μm total thickness (11.4 μm per layer) were prepared from the poly(amic acid) precursor solution through repetition of a spin-coat/softbake/cure process. Wide-angle x-ray diffraction results indicate that the polyimide molecules in the multilayer films are highly ordered along the chain axes as well as in the lateral direction and furthermore are highly oriented in the film plane as observed in a single-layer film of 11.4 μm thickness. The multilayer films showed the same dynamic mechanical properties and glass transition behavior (Tg = 330 °C) as a single-layer film. For the multilayer films both the in-plane dielectric constant (ε'XY) and out-of-plane thermal-expansion coefficient (αZ) were measured using time-domain spectroscopy and conventional thermal mechanical analysis, respectively. The ε'XY at room temperature was 3.69 (±0.08) over a frequency range of 0.35–2.50 THz. A similar ε'XY is predicted at frequencies of ≤0.35 THz. In contrast to the ε'XY, a relatively lower out-of-plane dielectric constant (ε'Z) was observed: ε'Z = 2.96–3.03 (±0.02) at 1 MHz, depending on moisture content in the film. The dielectric loss ε‘Z at 1 MHz was 0.011–0.014 (±0.001), depending on moisture content. The measured αZ was 74 ppm/°C over the temperature range of 25–150 °C, which was much higher than αXY = 2.6–5 ppm/°C. Consequently, large anisotropic ε' and α have been observed in the in plane and out of plane of the thermally imidized BPDA-PDA films. The anisotropic ε' and α were caused by high in-plane orientation of the polyimide molecules highly ordered along the chain axes in the films.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase with high room-temperature coercivity has been synthesized in sputtered film samples of Sm-Fe-V. The samples of SmFeV and SmFeZr have been processed as was SmFeTi to first produce a high room-temperature coercivity of 38.5 kOe. The observed intrinsic coercivity iHc for Sm:Fe:V=19.6:73.5:6.9 atomic was 15.8 kOe at 293 K with a rise to 31 kOe at 6 K. The 4πM at 293 K for an applied field of 90 kOe was 6.2 kG. When this sample was cooled in an applied field of 90 kOe, the 4πM rose smoothly to 7.9 kG at 6 K. The x-ray patterns for SmFeV were similar to the high iHc Sm-Fe-Ti which we have reported. All the observed x-ray-diffraction lines can be fit to the large-cell 5-17 Nd-Fe binary structure. In contrast to this, the Sm-Fe-Zr phase at a similar composition showed a readily indexed x-ray pattern of TbCu7 type with a=5.109 A(ring) and c=4.074 A(ring) with no unaccounted lines. The Sm:Fe:Zr atomic composition was 19.9:72.0:8.1. The Sm-Fe-Zr 4πM at 18 kOe was 6.2 kG and the coercivity was 6.7 kOe as measured at 293 K. Values of iHc for SmFe(Ti,V) intermediate compositions of 46 kOe have been measured at 293 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7492-7495 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of a highly textured bulk YBa2Cu3 (123) superconductor, with the high-transport Jc (≥ (R18)3.7×104 A/cm2 at 77 K) and flux jumps (T〈15 K), were characterized by x-ray diffraction, polarized optical microscopy, scanning electron microscopy, and scanning transmission electron microscopy. It was found that the grains of the 123 superconductor are preferentially oriented along the a-b plane of the 123 phase. The Y2BaCuO5 and CuO particles are dispersed uniformly in the 123 matrix, and the highly dense twins run through the matrix everywhere. Some irregular-shaped BaCuO2-CuO mixtures were observed at the 123 grain boundaries. The aligned 123 crystals and microstructural defects in the 123 matrix are considered to be responsible for the high-Jc value and flux jumps.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm-Co based 2-17 type films with the Fe concentrations increased up to 30 at. % have been sputter synthesized from Fe enriched TDK targets through thermalized sputtering onto substrates heated to 400–500 °C. The crystal structure of these Fe enriched films for total Sm concentrations of about 13 at. % was found to be rhombohedral 2-17, Th2Zn17 type. A minor 1-5 phase was also found to be present. For Fe concentrations of around 20 at. %, at these relatively low deposition temperatures, the films could not be formed in the ordered 2-17 phase. Instead, these lower Fe concentration films formed in the disordered TbCu7 type structure. On post-deposition anneal at temperatures in the 400–500 °C range for 1–2 h, the Fe enriched films showed significant improvements in the demagnetization behavior while no improvements were seen for the TbCu7 type films. The Fe enriched rhombohedral 2-17 type films exhibited unusually strong (220) texturing with I(113)/I(220)〈1/40, for out of plane c axes to in plane textures, and I(300)/I(220)〈1/50, for relative c axes in plane textures.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4942-4951 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential of the wake-field produced by a bunch of relativistic charged particles passing through a pill-box cavity is expressed by using Floquet's theorem, and an obvious requirement that the energy gain over all acceleration cavity of many pill boxes must be proportional to the number of pill boxes, based on the previous modal approach (BWW theory). It is found that the wake-field is consisted of two classes of modes: the longitudinal modes which are independent of the aperture and the pill-box gap, the hybrid (pill-box) modes which are dependent of the pill-box gap. The wake field is predominated by the fundamental longitudinal mode whose wavelength is on the order of the effective diameter of the cavity, and its magnitude is inversely proportional to the cross sectional area of the cavity for practical cavities with small apertures. Both longitudinal and transverse wake fields due to the longitudinal modes in an elliptical pill box cavity are expressed analytically in a closed series form by solving exactly the longitudinal eigenmode equation in the elliptical cylindrical coordinates in terms of Mathieu functions. It is found that both longitudinal and transverse wake fields whose amplitudes per driving charge are greater than 100 MV/m/μC can be generated in an elliptical cavity.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5923-5925 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SmCo films were sputter synthesized at room temperature in the presence of strong in-plane magnetic fields. Both in-the-film-plane and perpendicular anisotropy could be formed in the films depending upon the film preparation conditions. Post deposition annealing in the presence of in-plane magnetic fields directed perpendicular to the original field direction were performed to distinguish the behaviors of the various types of anisotropies. The physical origin of in-the-film-plane anisotropy can be explained as directional pair ordering. Perpendicular anisotropy was only formed in films synthesized through thermalized sputtering and was caused by growth induced structure. If formed, the microcrystallites also have large contributions to the anisotropy with their easy axes in the film plane, but without any preferred direction in the film plane. Both the formation of growth induced structure, which caused the perpendicular anisotropy, and the formation of microcrystallites, prevented the formation of the pair ordering, which decreased the in-the-film-plane anisotropy.
    Type of Medium: Electronic Resource
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