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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 973-976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na − Nd = 4 × 1015 cm−3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7898-7900 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step, open-tube diffusion process has been developed to form p+-p-n junctions in GaAs. n-type GaAs substrates were zinc diffused at 550 °C to form a p+ layer, capped with thermally deposited silicon nitride, and annealed in an open-tube furnace. The zinc redistributes during the anneal, forming a p layer adjacent to the p+ layer. The peak carrier concentration of the p+ and p layers and the depth of the p+-p and p-n junctions are controlled by the time and temperature of the anneal. The anneal time was varied from 30 to 180 min and the temperature range was 700–850 °C. Both the p+-p and p-n junction depths show a square root dependence on annealing time. Diffusion coefficients and activation energies for the zinc diffusion which occurs during the anneal are determined.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 13-15 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature distribution along the cavity of 0.5 W AlGaAs quantum well lasers are presented. The spatial distribution of temperature was determined by measuring the spectral shift of electroluminescence emitted through a window in the GaAs substrate metallization. The average temperature of the active layer is 10–15 K higher than the heatsink temperature at 0.5 W output. Facet temperatures can exceed the average active layer temperature by over 100 K. Data are also presented illustrating the temperature profile at different drive currents between threshold and the maximum operating current. A temperature profile of a laser with a damaged front facet is presented, showing a hot region that is twice the size of the defect.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1869-1871 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reliable, single-mode, 100 mW operation of strained-layer InGaAs single quantum well ridge waveguide lasers is demonstrated. The mean time to failure of coated, 5 μm wide lasers aged at constant current is over 100 000 h at 25 °C. Peak output power is 300 mW per facet, limited by thermal effects. The lasing wavelength is 980 nm. Preliminary results of pumping an erbium-doped fiber laser are reported.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    International journal of dermatology 29 (1990), S. 0 
    ISSN: 1365-4632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    International journal of dermatology 30 (1991), S. 0 
    ISSN: 1365-4632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1347-1351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000-A(ring)-thick yttria-stabilized cubic-zirconia (YSZ) protection layer to produce planar p-n junctions. The YSZ layer greatly reduced thermal decomposition of the semiconductor while allowing zinc to diffuse into the III-V semiconductors. The diffusion depth showed a square-root-of-time dependence for all samples protected with YSZ. Characterization of the GaAs diffused with the YSZ protection process indicates that the YSZ layer has virtually no effect on either the carrier concentration profile or activation energy. No thermal decomposition was observed by visual inspection following a diffusion using only elemental Zn on the GaAs, Al0.38Ga0.62As, or GaAs0.6P0.4 samples protected with a YSZ layer. Photoluminescence analysis shows that the YSZ-protected GaAs samples have higher luminescence efficiency relative to unprotected samples. Device fabrication has been demonstrated by combining the YSZ passivation process with selective area diffusion. Our results indicate that the YSZ diffusion procedure has greater tolerance to process variations than previously reported diffusion procedures for zinc in III-V semiconductors.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5225-5230 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-biased performance of a molecular-beam-epitaxy-grown high-power optothyristor has been systematically characterized for pulsed power-switching applications. The device has a P+N-SI-PN+ thyristor-like structure with the bipolar junctions formed by AlGaAs. The semi-insulating (SI) GaAs used is liquid-encapsulated-Czochralski grown, undoped, and 650 μm in thickness. It is found that the reverse-biased optothyristor can be triggered by a light-emitting diode operated at 10−5 W, and miniature semiconductor lasers can trigger the switch with 132 A current using only a 1-mm-diam optical aperture. The reverse switching di/dt and the maximum peak current are reported as a function of blocking voltage. The effects of bipolar junctions on both sides of the SI-GaAs are also reported by comparing the bulk photoconductive current with the optothyristor switched current. It is shown that a laser beam of 0.05 μJ can be used to trigger on and switch about the same current as a 0.3 μJ laser beam, suggesting the possibility of integrating miniature semiconductor lasers and the optothyristors on the same chip to form a portable, compact, high-power solid-state pulser.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: The major outer membrane protein of Haemophilus influenzae type b (Hib) is porin (Mr 38000, 341 amino acids). To identify antigenic determinants on Hib porin that might be exposed at the bacterial ceil surface, seven mouse monoclonal anti-Hib porin antibodies were generated. The monoclonal antibodies were tested for their binding to intact cells by flow cytometry; all but one bound to the cell surface. Digestions of Hib porin with cyanogen bromide, hydroxylamine or trypsin generated fragments, the identities of which were confirmed by microsequencing of the amino termini. Following electrophoresis and immunoblotting of the fragments, the specificities of the monoclonal antibodies for their cognate sequences were determined. The porin gene ompP2 was expressed in the baculovirus expression vector system; the recombinant porin was recognized by all of the monoclonal antibodies. Deletions were created by omega mutagenesis of ompP2, generating proteins truncated after amino acids 139, 174, 182, and 264. These deletion proteins were tested for reactivities with the monoclonal antibodies, thereby establishing the boundaries of three antigenic determinants that were recognized by the monoclonals: domain (i), amino acids 104–139; domain (ii) amino acids 162–174; and domain (iii), amino acids 267–341. The biological activities of monoclonal antibodies that were representative of these three classes were tested for their bactericidal activity in complement-mediated tysis of whole cells. The monoclonal antibodies were also tested for their immunoprotective properties in the infant rat model of bacteraemia. Although the monoclonal antibodies were surface-binding, they were neither bactericidal nor protective.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Algorithmica 12 (1994), S. 170-181 
    ISSN: 1432-0541
    Keywords: General-purpose parallel computation ; Communication latency ; Block PRAM ; Locality ; PRAM simulations ; Universal hashing
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract Consider the problem of efficiently simulating the shared-memory parallel random access machine (PRAM) model on massively parallel architectures with physically distributed memory. To prevent network congestion and memory bank contention, it may be advantageous to hash the shared memory address space. The decision on whether or not to use hashing depends on (1) the communication latency in the network and (2) the locality of memory accesses in the algorithm. We relate this decision directly to algorithmic issues by studying the complexity of hashing in the Block PRAM model of Aggarwal, Chandra, and Snir, a shared-memory model of parallel computation which accounts for communication locality. For this model, we exhibit a universal family of hash functions having optimal locality. The complexity of applying these hash functions to the shared address space of the Block PRAM (i.e., by permuting data elements) is asymptotically equivalent to the complexity of performing a square matrix transpose, and this result is best possible for all pairwise independent universal hash families. These complexity bounds provide theoretical evidence that hashing and randomized routing need not destroy communication locality, addressing an open question of Valiant.
    Type of Medium: Electronic Resource
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