Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 721-723
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth and characterization of a ten period silicon/GaAs superlattice by molecular beam epitaxy is described. Reflection high energy electron diffraction of the surface reconstruction during growth of the GaAs layers showed the (4×2)→(3×2) →(3×1)→(2×4) sequence reported previously for GaAs grown on pseudomorphic silicon, although the intermediate stages were much more persistent than previously reported. X-ray diffraction revealed satellite peaks clearly visible out to the fourth order, indicating a high degree of structural perfection. Comparison of the experimental diffraction profile and that obtained using a dynamical diffraction simulation yielded average layer thicknesses of 440 and 2.7 A(ring) for the GaAs and silicon layers, respectively. Excellent agreement between the experimental and the simulated profiles was observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107437
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