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  • 1990-1994  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Gold implantation in n-type silicon: Entropy factor and diffusion studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1601-1605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted and diffused in n-type silicon. Diffusion has been performed at 1243 K for times ranging between 1 and 20 h in a dry-nitrogen flux. Resistivity profiles were transformed into concentration profiles by solving the charge balance equation. The entropy factor for the ionization of gold acceptor level was determined to be 50±5. By using this value and solving the charge balance equation we have calculated the silicon resistivity versus gold concentration (and therefore minority-carrier lifetime) curves as a function of the resistivity of starting material. Experimental gold concentration profiles were compared to the profiles obtained by numerical solution of the diffusion equation for gold in silicon. The measured diffusion coefficients coincide with the values determined for p-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346638
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitation of arsenic diffused into silicon from a TiSi2 source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 726-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion into a p-type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive-in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80-nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide-silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and clustering of arsenic atoms. Precipitates are easily dissolved after thermal annealing in the absence of the TiSi2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347357
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Control of gold concentration profiles in silicon by ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1350-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of ion-implanted gold in a silicon single crystal has been studied by the spreading resistance technique. In this work we investigate both unidimensional and bidimensional diffusion across the wafer and along the wafer surface, respectively, by using limited or unlimited gold sources. We will show that by using ion implantation of gold it is possible to produce unique concentration profiles through the fine control of the amount of gold atoms in the diffusion source; both depth and surface profiles can be tailored. All the measured profiles are in good agreement with the theoretical prediction of the kick-out mechanism for gold diffusion in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347271
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1895-1897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of As-doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two-dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one-dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109535
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Titanium silicide as a diffusion source for arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7174-7176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The matter transport of arsenic ions implanted into titanium silicide layers has been investigated after thermal diffusion treatment in the 800 °C–1100 °C temperature range. The arsenic atoms redistribute between TiSi2 and Si with a segregation coefficient depending on temperature. The diffused amount increases linearly with the square root of annealing time at 1100 °C. The n-doped shallow Si layer has a quite good electrical activity with a mean resistivity of about 1.2 MΩ cm. The leakage current of the reverse-biased n+/p junction is instead quite high. Stacking faults are observed in the diffused layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344550
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  • 6
    Electronic Resource
    Electronic Resource
    Compensating effects of platinum in n- and p-type silicon (1991)
    Springer
    Applied physics 52 (1991), S. 119-122 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 72.80 Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Spreading resistance measurements have been used to investigate compensating effects of ion-implanted and diffused platinum in both n- and p-type silicon. The conversion resistivity-platinum concentration has been obtained by solving the charge neutrality condition, which requires a knowledge of the entropy factors associated to the ionization of the two energy levels introduced by the platinum inside the silicon bandgap. We have measured entropy factor values of 25±2 and of 2±0.3 for the donor and the acceptor level, respectively, and by using these values the silicon resistivity versus platinum concentration has been calculated for different values of the substrate dopant concentration. As the platinum acceptor level is shallower than the corresponding level introduced by gold doping, a large difference in the resistivity increase induced by the two elements in n-type silicon is expected. We will show that this large difference is however smoothed by the different values of the corresponding entropy factors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323727
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    Paper (German National Licenses)
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