Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 1370-1372
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Crystalline thin films of polytetrafluoroethylene were deposited on Si(100) wafers by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. X-ray photoemission spectra indicated that the composition of the deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100–400 nm, but they were smoothed out at elevated wafer temperature of ∼370 K, while the crystalline feature was still maintained. The refractive index was ∼1.35 at 633 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112055
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |