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  • 1990-1994  (7)
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Materialart
Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2411-2414 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354701
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  • 2
    Digitale Medien
    Digitale Medien
    Electrical transport and optical properties of zirconium nitride/aluminum nitride multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 846-849 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have synthesized zirconium nitride/aluminum nitride multilayered thin films with a reactive sputtering technique. The electrical transport and optical properties of these multilayers have been examined by resistivity, Hall effect, and near-normal incidence reflectance and transmittance measurements. We show the existence of a metal-to-insulator transition and strong increase of Hall coefficient at small wavelength of composition modulation. The optical response of the multilayers is systematically modified from the behavior of the individual constituents. The measured optical response is in qualitative agreement with a simple effective-medium theory.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347320
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  • 3
    Digitale Medien
    Digitale Medien
    Strain effects in epitaxial GaN grown on AlN-buffered Si(111) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7824-7828 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth of GaN thin films on AlN-buffered Si(111) by ultrahigh-vacuum rf glow discharge reactive magnetron sputtering is reported. Epitaxy of GaN is established by x-ray and electron diffraction. Raman scattering from the epitaxial films consistent with that of wurtzitic GaN is observed. The ion energies involved in the growth process are quantified by measuring the plasma potentials of the Ar/N2 glow discharge by an emissive Langmuir probe technique. As a function of increasing input power, a systematic increase in ion energies and a systematic straining of the GaN lattice are observed. Measured GaN phonon energy scales with lattice strain. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357916
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  • 4
    Digitale Medien
    Digitale Medien
    Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3446-3455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have grown aluminum nitride thin films by ultrahigh vacuum reactive sputter deposition on Si(111) and Si(001) substrates. We show results of film characterization by Raman scattering, ion beam channeling, and transmission electron microscopy, which establish the occurrence of epitaxial growth of wurtzitic aluminum nitride thin films on Si(111) at temperatures above 600 °C. In contrast, microstructural characterization by transmission electron microscopy shows the formation of highly oriented polycrystalline wurtzitic aluminum nitride thin films on Si(001). Real-time substrate curvature measurements reveal the existence of large intrinsic stresses in aluminum nitride thin films grown on both Si(111) and Si(001) substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356105
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  • 5
    Digitale Medien
    Digitale Medien
    Picosecond acoustic pulse reflection from a metal-metal interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1185-1187 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Picosecond duration laser pulses are used to generate ultrashort acoustic pulses in a bilayer metal film. Time-resolved transient piezoreflectance measurements permit the observation of acoustic reflections from a metal-metal interface within the film, as well as reflections from the film-substrate interface. We show that our measurements are well described by an abrupt interface model of acoustic mismatch.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103521
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  • 6
    Digitale Medien
    Digitale Medien
    Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied growth of aluminum nitride (AlN) on Si(111) by ultra-high vacuum (UHV) reactive dc-magnetron sputtering under a mixture of Ar and N2 gases. As-grown films have been examined by x-ray diffraction, Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). Results of x-ray diffraction show texturing with AlN [0001]//Si[111]. Complementary TEM examinations observe epitaxy of AlN on Si(111), with AlN[112¯0]//Si[22¯0]. The AlN/Si interface is sharp and flat. The lowest substrate temperature required to achieve epitaxy Tepi has been determined to be ∼600 °C. A dislocation density in AlN film grown at 700 °C has been estimated to be ∼3×1011/cm2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106092
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  • 7
    Digitale Medien
    Digitale Medien
    Neutron diffraction and transmission electron microscopy study of hydrogen-induced phase transformations in Zr3Al (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1312-1319 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogen-induced phase transformations of the equilibrium intermetallic compound Zr3 Al have been studied by in situ elastic neutron scattering, x-ray diffraction, and transmission electron microscopy (TEM). TEM observations reveal two distinct modes of amorphous phase formation in Zr3 Al upon hydrogenation, namely, heterogeneous nucleation at preexisting grain boundaries, and homogeneous nucleation within single-crystal grains. In situ neutron diffraction reveals a phase separation between a hydrogen (deuterium) poor and a hydrogen (deuterium) rich crystalline phase. Rietveld profile refinement of the neutron diffraction data indicates predominant hydrogen (deuterium) occupation of the octahedral interstitial sites in the crystalline matrix that have only Zr nearest-neighbor atoms. The two different modes of amorphous phase nucleation are directly related to the degree of hydrogen dissolution in the host crystalline matrix.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345683
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