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  • 1990-1994  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering investigation of ion-irradiated hydrogenated amorphous carbon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 70-72 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogen removal by ion irradiation on the first- and second-order resonant Raman scattering of a-C:H are reported. We have measured the absolute first-order Raman intensity versus ion-irradiation dose and found a monotonic decrease in the absolute intensity with increasing ion dose. In addition, second-order Raman scattering also exhibited some resonance enhancement. The consequences of these results are discussed, particularly the important role of hydrogen in determining the vibrational properties of a-C:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347096
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering study of InAs/GaInSb strained layer superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5608-5614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on [001] GaAs substrates with GaSb buffers, and directly on [001] GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350174
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained-layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 684-686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties of a new class of strained-layer superlattices (intrinsic Stark effect superlattices) have been investigated. Specifically, we have compared the nonlinear transmission of Ga1−xInxAs-GaAs strained-layer superlattices grown along the (211) axis to identical superlattices grown along the (100) axis, and found that the optical nonlinearity in the (211) sample is about one order of magnitude greater than in the (100) sample. A blue shift of the exciton resonance and an increase in the exciton absorption strength in the (211) sample with increasing light intensity was observed (attributed to screening of the intrinsic Stark effect fields by photogenerated carriers), resulting in the stronger optical nonlinearity. The maximum of the nonlinear absorption index, ||α2||, in the (211) sample was 54 cm/W (||Im χ3||=0.33 esu) whereas in the (100) sample the maximum of ||α2|| was 6.9 cm/W (||Im χ3||=0.042 esu). The measured carrier recovery time in both samples was 2 ns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104568
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  • 4
    Electronic Resource
    Electronic Resource
    Far-infrared photoresponse of the InAs/GaInSb superlattice (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 846-848 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105255
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  • 5
    Electronic Resource
    Electronic Resource
    Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3283-3285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the interface structure and the quality of molecular-beam-epitaxy grown AlSb/InAs/AlSb quantum wells through Raman scattering from interface vibrational modes from single quantum wells. A series of samples was grown by varying the growth temperature and the interface composition (by forcing either a light AlAs or a heavy InSb interface bond configuration at each InAs/AlSb interface). We have observed the InSb modes for all the samples and related the intensity and shape of the interface modes to the structure and quality of the interfaces. This work demonstrates that a single interface heterostructure can be probed by Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106720
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    A random amplified polymorphic DNA (RAPD) molecular marker for the Tm-2 a gene in tomato (1993)
    Springer
    Euphytica 74 (1993), S. 159-163 
    Details
    ISSN: 1573-5060
    Keywords: PCR ; molecular tagging ; TMV ; resistance ; RAPD ; tomato ; Lycopersicon esculentum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary A RAPD marker, linked to the Tm-2 agene engendering TMV resistance in tomatoes, was identified. The validity of the RAPD marker was corroborated by screening several tomato varieties, and correctly identifying those which carried Tm-2 a, as well as by F2 segregation analysis. All tested resistant varieties descending from a common Lycopersicon peruvianum/esculentum ancestor, LA1791, exhibited this marker.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00033782
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    Paper (German National Licenses)
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