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  • 11
    Electronic Resource
    Electronic Resource
    X rays from z-pinches on relativistic electron-beam generators (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This review summarizes recent experimental data on imploding z-pinches and their radiation output, and gives an overview of theoretical issues concerning radiation production in the pinch plasma. A z-pinch plasma is created when the current from a fast, powerful electrical generator compresses and heats a small amount of material between the electrodes. The hot, dense plasma emits copious amounts of radiation extending from the visible to the x-ray region. With a 10-TW electrical discharge the radiative power may be a few TW, with an energy per pulse of up to tens of kilojoules. Our interest is mainly in the photons with energy around 1 keV, which are useful in x-ray lithography, microscopy, surface studies, and other applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341808
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  • 12
    Electronic Resource
    Electronic Resource
    Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3199-3203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonhomogeneous distribution of the carrier transport properties in silicon on insulator thin films synthesized by oxygen implantation are determined using gate-controlled p-type Hall devices. The conductivity, Hall effect, and capacitance were measured between 77 and 300 K as a function of the gate voltage and then differentiated to obtain depth profiles. The hole mobility is high and nearly constant in the top 100 nm of the film but drops rapidly in the region containing implantation-induced defects. The very good quality of the top layer, similar to that of bulk Si, is confirmed by the temperature behavior of both the mobility and the ionized impurity concentration at various depths in the film. Acoustic phonon scattering is found to prevail above 120 K and Coulombian scattering below. A difference between the profile of the total number of holes and that of the mobile holes is observed at low temperatures and explained in terms of long-range potential fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337737
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  • 13
    Electronic Resource
    Electronic Resource
    X-ray lasing in a Na/Ne plasma environment (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 27-32 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation has been conducted to determine the feasibility of generating conditions favorable to population inversion, gain, and x-ray lasing in a two-component plasma consisting of sodium and neon. An intense laser beam is assumed incident on both sides of a Na/Ne slab target separated by a carbon thermal buffer. Temperature and density profiles of the laser target interaction are calculated using a Lagrangian hydrodynamics model. Level populations and radiative emissions are evaluated using a collisional-radiative equilibrium model including opacity effects. It appears possible to achieve measurable gain at 82, 58 and 230 A(ring) from the 3-2, 4-2, and 4-3 transitions of heliumlike neon, respectively. Additionally, by pulse tailoring and target design, it should be possible to enhance the Na pumping power. off
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335390
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  • 14
    Electronic Resource
    Electronic Resource
    The dense radiating deuterium Z-pinch plasma (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4154-4162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiative emission from a frozen deuterium Z-pinch driven by a slowly rising current (∼3 kA/ns) is investigated. This approach is in marked contrast to the standard radiating Z-pinch plasma which is driven by a rapid-current rise leading to a fast implosion. The slow pinch is modeled as a quasistatic contraction subject to Bennett-pressure equilibrium and driven by a constant generator voltage of 200 kV. Electron degeneracy is approximately accounted for in the pressure, however, the resistivity is taken as purely classical. The bremsstrahlung spectrum transitions from thin to nearly thick during the collapse phase. The predictions from this simple model suggests that this approach may have interesting applications as a radiation source in the kilovolt regime. In particular, we find that a deuterium plasma of 1018 cm−1 line density yields ∼60 kJ of radiation above 3 keV while undergoing a radiative collapse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344000
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  • 15
    Electronic Resource
    Electronic Resource
    Radiative properties of puffed-gas mixtures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 785-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiative yield of dense, high-temperature plasma mixtures has been studied theoretically for conditions typically attained in puffed-gas implosions from high-voltage pulse power generators. The mixtures are characterized using an equilibrium ionization/radiation model which calculates the self-consistent state density populations of detailed level configurations by solving the complete set of atomic rate equations. In order to accurately model the quantitative line emission as well as the radiation spectrum from the plasma mixtures, detailed atomic models of L- and K-shell ion level structure and collisional processes in neon, argon, and krypton are employed; these models are described in detail. Specific mixtures reported on include neon/argon, argon/krypton, helium/argon, and helium/krypton. They are considered as compressed stationary plasmas, radiating at constant temperature and density (the time-history of the implosion dynamics is neglected in this report). While no power amplification is detected in the optically thin approximation via the various mixtures, broadband spectral enhancement is demonstrated using various constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334727
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  • 16
    Electronic Resource
    Electronic Resource
    Synergistic methane formation kinetics for hydrogen impact on carbon (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3293-3299 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A physical/chemical model is presented for the reaction kinetics for methane formation from carbon, due to bombardment by energetic (∼100's eV) H+ ions and thermal (∼1 eV) H0 atoms. While the model was developed for H+ and H0, it can be readily applied to nonhydrogenic energetic particles (ions or atoms, e.g., Ar+, He+, He) in combination with thermal (∼1 eV) hydrogen (again ions or atoms) impacting on carbon. Both collisional (in the case of the energetic particles) and chemical reaction processes are included. Special cases of sub-eV H0 alone, energetic H+ alone, and combined H0 plus H+ were considered and fitted to experimental data. Generally good agreement was found between theoretical predictions and experimental results over the experimental flux and H+ energy ranges studied (H0 flux: 6×1014–7×1015 H0/cm2 s, H+ flux: 6×1012–5×1015 H+/cm2 s, H+ energy: 300 eV/H+ and 1 keV/H+).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450999
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  • 17
    Electronic Resource
    Electronic Resource
    Dynamics of imploding neon gas-puff plasmas (1986)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 1971-1978 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The implosion dynamics of a hollow cylindrical neon gas-puff plasma are investigated using a 1-D non-local thermodynamic equilibrium radiation hydrodynamic model. Two cases are considered: the implosion of the gas puff with and without a low-density central core plasma. It is shown that the implosion efficiently converts the kinetic energy of runin into radiation and that the radiation plays a significant role in the implosion energetics. For each case, the history of the implosion dynamics and emission spectra are presented as well as the distribution of radiative energy in the L and K shells. Finally, a comparison is made with purely hydrodynamic calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865624
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  • 18
    Electronic Resource
    Electronic Resource
    Radiative properties of puffed-gas mixtures: The case of optically thick plasmas composed of two elements with similar atomic numbers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4349-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using detailed atomic and radiative transfer calculations, we consider the K-shell radiative properties of optically thick plasmas composed of two different elements with nearly the same atomic number. A sodium-neon mixture is chosen for specificity, and the plasma conditions considered are similar to those achieved in puffed-gas or exploding-wire Z pinches. The emissivity of an individual K-shell line is parameterized in terms of an "ultimate'' photon escape probability which is a function of both the single-flight photon escape probability and the collisional quenching probability. Holding the total ion density (sodium plus neon) constant, we have evaluated the total K-shell emissivity as a function of sodium-to-neon ratio. In contrast to the optically thin case the emitted K-shell power peaks at values of this ratio intermediate between pure neon and pure sodium. The opacity effects responsible for this phenomenon are analyzed using the escape parameterization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334594
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  • 19
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 465-467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99445
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  • 20
    Electronic Resource
    Electronic Resource
    Formation of buried layers of β-SiC using ion beam synthesis and incoherent lamp annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2242-2244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that well-defined buried layers of β-SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (〉3×1017 C+ cm−2) at 200 keV into a (100) single-crystal silicon which is maintained at a temperature of approximately 550 °C. During the subsequent anneal at 1405 °C for 90 min redistribution of the implanted species occurs, enabling the formation of a buried layer of β-SiC overlain by high-quality single-crystal silicon (χmin=4.1%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98953
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