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  • 1985-1989  (5)
  • 1975-1979  (3)
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  • 1
    Digitale Medien
    Digitale Medien
    Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1195-1197 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100017
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  • 2
    Digitale Medien
    Digitale Medien
    Incorporation of erbium in GaAs by liquid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2803-2806 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The incorporation of the lanthanide element erbium in GaAs during growth by liquid-phase epitaxy is investigated by low-temperature photoluminescence measurements. After an anneal of the epitaxial layers at 850 °C, a characteristic Er-associated optical transition appears at a wavelength of ∼1.55 μm, however, no erbium-related photoluminescence signal is found in the as-grown GaAs:Er layers. The Zeeman splitting of the new photoluminescence lines reveals a cubic symmetry of the optically active Er complex. Successive mechanical polishing and annealing of the layers provides evidence for the incorporation of Er within the layer as an optically inactive Er complex, which is activated only at the surface by thermal annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337870
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  • 3
    Digitale Medien
    Digitale Medien
    Growth of Si1−xGex on silicon by liquid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4445-4449 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate heteroepitaxial growth of smooth homogeneous Si1−xGex layers on crystalline silicon substrates by means of liquid-phase epitaxy. For a given saturation temperature Tsat, different alloy compositions x can be grown by varying the composition of the solutions. However, smooth epitaxial layers are obtained only up to a critical germanium content xc which increases as Tsat decreases and depends upon the choice of solvent.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339083
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of biaxial strain on exciton transitions of AlxGa1−xAs epitaxial layers on (001) GaAs substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2108-2113 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: From the analysis of spectroscopic ellipsometry measurements in the temperature range between 16 and 300 K, the exciton splittings and shifts due to lattice mismatch in the AlxGa1−xAs/GaAs alloy system grown by liquid-phase epitaxy are obtained. The temperature dependence of the Ev10 and Ev20 exciton transitions shows that the difference in the expansion coefficients of the two materials does not play a significant role in the induced internal stress. The internal stresses are evaluated from an x-ray double-crystal diffraction technique. The shear deformation potential values of AlxGa1−xAs determined from the experimental results are in disagreement with those found in the literature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344304
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  • 5
    Digitale Medien
    Digitale Medien
    Laser-induced chemical etching of silicon in NF3 atmosphere (1989)
    Springer
    Applied physics 48 (1989), S. 465-469 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 81.60 ; 82.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Chemical etching of single-crystal Si in an NF3 atmosphere is performed by continuous irradiation with an Ar+ laser at 514.5 nm. The etching process proves to be a thermally stimulated chemical reaction between solid Si and NF3 gas. The experimental results show how the depth and width of the etched grooves depend on laser power, scan speed, and gas pressure. The etch rates observed may exceed 25 μm/s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00619719
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  • 6
    Digitale Medien
    Digitale Medien
    Development of depressions and voids during LPE growth of GaAs (1978)
    Springer
    Applied physics 15 (1978), S. 243-252 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 81.15.Lm ; 68.55+b ; 61.70.Jc
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Depressions and voids, morphological defects which are frequently encountered in LPE-layers of III–V compounds, are described. Their development is discussed for GaAs LPE layers exhibiting facet growth as well as terrace growth. Experimental conditions for the growth of depression- and void-free layers are specified.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00896103
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  • 7
    Digitale Medien
    Digitale Medien
    Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs (1978)
    Springer
    Applied physics 16 (1978), S. 345-352 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 78.30-j ; 68.55+b
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1−xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00885858
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  • 8
    Digitale Medien
    Digitale Medien
    Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy (1979)
    Springer
    Applied physics 18 (1979), S. 67-75 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (∼0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00935905
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