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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 53 (1988), S. 1966-1969 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of metamorphic geology 5 (1987), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Abstract High-pressure granulite-facies gneisses in the NE Ox inlier in NW Ireland have undergone extensive Caledonian retrogression. In the local area of Slishwood, however, reworking was negligible and the gneisses (psammites, semipelites, pelites, metabasites and ultramafites) preserve evidence of P–T changes at high grade which mainly post-date pre-Caledonian polyphase deformation. Temperatures reached 850–900°C (based on garnet-clinopyroxene geothermometry and the presence of mesoperthite) during and after decompression from earlier eclogite-facies conditions (inferred from textural evidence of plagioclase release in sieve-textured augite). Subsequent cooling at high pressure is inferred from the unequivocal replacement of sillimanite by kyanite.A Sm–Nd mineral isochron (gt–cpx–plag–WR) of 605 ± 37 Ma is taken to date a point on the cooling path, and confirms the hitherto suspected pre-Caledonian age of the high-grade metamorphism. Geochemical and Sm–Nd isotopic data indicate that the protoliths were probably late Proterozoic arkosic sediments and tholeiites. Following metamorphism they apparently came to reside near the base of the crust where they slowly cooled. The eventual exhumation of these gneisses is attributed to Caledonian crustal imbrication, followed by rapid isostatic recovery.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Herbage and faeces samples were retained from an intake and in vivodigestibility trial using material harvested at three different stages from five indigenous hill plant communities (those dominated by Agrostis-Festuca., Nardus stricta., Molinia caerulea., Eriophorum vaginatum and Tri-chophorum caespitosum) and from sown swards of ryegrass or white clover. Samples of the herbages and of their separate components, together with extrusa samples of the same herbages recovered from pen-fed sheep and cattle oesophageal fistulates, were digested in vitrousing rumen liquor. Measurements were made also of faecal nitrogen concentration (FN) and of indigestible acid-detergent fibre (IADF) using the samples from the original trial.The range of in vitrodisappearance values of the herbages (IVOMD; 0809-0278) was slightly wider than those of in vivodigestibility (OMD; 0-796-0-37I). Differences between OMD and IVOMD were greatest at low quality and relationships were best described by two separate linear regressions of OMD on IVOMD for (a) ryegrass, white clover, Agrostis-Festucaand Nardus(RSD; 0 0185) and, (b) Molinia, Tricho-phorumand Eriophorum(RSD; 00246). In vitrodisappearance values of extrusa were higher than those of herbages offered by 00503 and 00156 units for sheep and cattle respectively, partly because of greater levels of ensalivation, especially in the sheep. The relationships of OMD to IADF and to FN were poor, though inclusion of faeces output and fitting parallel lines for communities in the regression of OMD on FN reduced the RSD to 0020. We conclude that in vitrodigestion of samples of extrusa, using appropriate standards, is the best method of diet digestibility prediction for sheep and cattle grazing these communities.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 97-98 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. Cathodoluminescence from individual laser stripes was observed at 300 K with a wavelength determined to be 1.57 μm and at 100 K with a wavelength of 1.46 μm.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2257-2259 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski-grown tin-doped silicon samples have been irradiated by 2 MeV electrons at room temperature. The concentration of divacancies is studied as a function of bombardment dose, and as a function of temperature during a subsequent isochronal annealing. The results are compared with that for a control sample and the role of direct generation versus vacancy-vacancy pairing for divacancy formation is discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 816-818 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of nominally undoped InP by molecular beam epitaxy (MBE) from metallic indium, trimethylindium, or triethylindium and phosphine. We find significantly reduced acceptor incorporation when metalorganic sources are used, with exciton-dominated photoluminescence at 4.2 K and electron mobilities up to 47 500 cm2 V−1 s−1 at 77 K. The 4.2 K photoluminescence indicates that the residual shallow acceptors are either Ca, Mg, or Be. The carbon incorporation appears to be minimal. Interestingly, there is also little difference in electrical and optical properties of InP grown by metalorganic molecular beam epitaxy (MOMBE) using trimethyl or triethylindium, in marked contrast to the situation for GaAs MOMBE growth using trimethyl or triethylgallium.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 395-399 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulphur from an electrochemical source has been used to dope GaSb grown by molecular-beam epitaxy. The incorporation of sulphur in the epilayers has been measured by secondary ion mass spectrometry, and the effects of substrate temperature during growth and of the antimony-to-gallium flux ratio have been studied.The incorporation has been found to be a strong function of substrate temperature, varying from ∼100% below 435 °C to ∼1% at 525 °C. The incorporation also increases with antimony overpressure, varying by a factor of 3 on changing the antimony-to-gallium flux ratio from 1:1 to 4:1. The substrate temperature dependence is described by a simple kinetic model. The electrical activity of the incorporated sulphur is shown to be close to 100%.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 213-218 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and sulfur-doped InP have been grown by molecular-beam epitaxy. Undoped InP is n type and contains residual sulfur incorporated from the phosphorus source material. Increasing substrate temperatures during growth cause a decrease in the residual doping level to 2–3×1015 cm−3 but are associated with an increase in the compensation ratio and an increase in the concentration of epilayer defects, up to 105 cm−2. Doping with sulfur produced from an electrochemical sulfur cell has been studied in the range 5×1016–6×1019 cm−3. Highly doped layers show greatly improved surface morphology compared to low and undoped InP layers. Sulfur is shown not to diffuse to any measurable extent during MBE growth; however, at high growth temperatures (530 °C) there is loss of sulfur as a volatile indium sulfide. The removal of the surface oxide from the InP substrate before growth has been studied as a function of substrate temperature and phosphorus overpressure. The oxide layer can be removed at a low temperature (∼480 °C) by using a low pressure of P4 rather than P2 as is used during growth. The low-temperature oxide removal leads to improved epilayer morphology for undoped layers. The removal of the surface oxide and the loss of sulfur during growth as a volatile sulfide are discussed in terms of the free energy of formation of the various possible products.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1009-1014 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrochemical cell Pt/AgI/Ag2 X/Pt (X=S,Se) has been used as a highly controllable source of chalcogen dimers for n-type doping of Ga1−xAlxAs grown by molecular-beam epitaxy (MBE). The incorporation behavior has been investigated as a function of alloy composition, growth temperature, and arsenic overpressure. At low temperatures, 〈600 °C, sulfur and selenium are incorporated into Ga1−xAlxAs in a facile manner. At higher temperatures, where loss of chalcogen dopant from GaAs has previously been observed, sulfur shows an enhanced stability in the aluminum-containing alloys. Excess As4 is shown to hinder the loss further. The behavior is modelled in terms of the relative stabilities of the volatile and involatile gallium and aluminum chalcogenides under MBE growth conditions.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 330-332 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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