Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 1941-1943
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Iron has been diffused into p- and n-type silicon containing various concentrations of carbon and oxygen. Apart from the established iron interstitial level and the iron-boron complex, no new centers were detected involving iron complexing with either the carbon or the oxygen. The iron-boron level was shown to dissociate by a recombination-enhanced mechanism and a deep acceptor level of this complex was detected at Ec −0.29 eV, which must be the recombination level rather than the well-established level at Ev +0.1 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335468
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