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  • 11
    Electronic Resource
    Electronic Resource
    Mapping of microelectric and magnetic fields with double-exposure electron holography (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 176-178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The double-exposure electron holographic technique has been put into practical use for the first time. By this method an accurate recording of the distribution of electric and magnetic fields can be directly obtained by the electron microscope without resorting to sophisticated optical manipulation of the holograms. Problems concerning the operative definition of the contour maps are discussed. Experimental results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99511
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  • 12
    Electronic Resource
    Electronic Resource
    Preparation of Y-Ba-Cu-O high Tc superconducting thin films by plasma-assisted organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the high Tc superconducting Y-Ba-Cu metal oxide have been prepared for the first time by plasma-assisted organometallic chemical vapor deposition using β-diketonate chelates of Y, Ba, and Cu, Y(C11H19O2)3, Ba(C11H19O2)2, and Cu(C11H19O2)2 as starting materials, followed by post-annealing under a reduced pressure of oxygen stream. X-ray diffraction spectra indicate that the films deposited on the yttria-stabilized zirconia (YSZ) substrate have a significant preferential orientation of the crystallite c axis being perpendicular to the substrate surface. Four-probe resistivity measurements reveal the temperature of the onset of superconductivity at 91.6 K and zero resistance by 78.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102404
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  • 13
    Electronic Resource
    Electronic Resource
    X-ray interference measurement of ultrathin semiconductor layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1774-1776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 A(ring) and 107±3 A(ring) for the single strained layer samples and 7 A(ring)/50 A(ring) and 32 A(ring)/32 A(ring) for the double strained layer samples. The rocking curve results for the 107 A(ring) single-barrier sample and the 7 A(ring)/50 A(ring) double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102189
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  • 14
    Electronic Resource
    Electronic Resource
    Identification of oxygen vacancies in YBaCuO superconductors by high-resolution electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 368-370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy studies as well as computer simulation studies on oxygen vacancies in Y-Ba-Cu-O superconductors show that the existence of oxygen vacancies at {0, 1/2, 0} sites leads to the distortions of structural images. For certain imaging conditions, the spots corresponding to the column of oxygen vacancies can be distorted heavily, so that the indirect image of oxygen vacancies in Y-Ba-Cu-O superconductors may be acquired. The results reveal that even in local area the oxygen vacancies may be distributed regularly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101452
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  • 15
    Electronic Resource
    Electronic Resource
    Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 773-775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185 °C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240 °C are stoichiometric, single crystal, and of specular surface morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99829
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  • 16
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of YBaCuO films on Si and SiO2 substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 153-155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very rapid thermal annealing technique has been employed on sputter-deposited YBaCuO films. After an O2 anneal (with or without a N2 preanneal) at temperatures as high as 920 °C for 8–12 s, films on (100)Si and on SiO2 /Si substrates exhibited superconductivity onsets above 95 K and zero resistance in the range 40–66 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100578
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  • 17
    Electronic Resource
    Electronic Resource
    GaAs-Si heterojunction bipolar transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99295
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  • 18
    Electronic Resource
    Electronic Resource
    Characteristics of annealed p/n junctions between GaAs and Si (100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98322
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  • 19
    Electronic Resource
    Electronic Resource
    Low-resistance nonalloyed ohmic contacts on p-type GaAs using GaSb/GaAs strained-layer superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 570-571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Employing a GaSb/GaAs strained-layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10−7 Ω cm2 have been realized for nonalloyed ohmic contact to p-type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101835
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  • 20
    Electronic Resource
    Electronic Resource
    Lattice defects and flux pinning in crystallized metal-oxide glasses in the Bi-Sr-Ca-Cu-O system (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1354-1356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large amounts of lattice defects have been observed in the crystallized metal-oxide glasses in the Bi-Sr-Ca-Cu-O system prepared by the rapid solidification method. The density of such defects has been found to greatly increase as the calcium and copper content of the starting material increases. These lattice defects are formed as a result of supersaturation of calcium and copper in the sample matrix. The intragrain critical current density has been found to increase 30 times in magnitude as the density of the lattice defects is increased in the sample matrix. The corresponding flux pinning mechanisms are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101896
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