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  • 1985-1989  (14)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Preferentially oriented epitaxial Y-Ba-Cu-O films prepared by the ion beam sputtering method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1292-1295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented epitaxial Y-Ba-Cu-O films were prepared on (100) SrTiO3 substrates by oxygen reactive ion beam sputtering. The epitaxial orientations were varied by controlling both substrate temperature and oxygen parital pressure. c-axis oriented films tended to be formed at higher substrate temperatures (〉620 °C) and lower oxygen pressures (〈3×10−3 Torr). In contrast, a/c- and a-axis oriented films were formed at lower substrate temperatures (〈600 °C) and higher oxygen pressures (〉3×10−3 Torr). The best Tc (end) of 82 K was observed in one of the c-axis oriented film without post-annealing. The tendency for preferential orientation can be well understood in terms of the lattice mismatch between the substrate and the film, the lattice constants of which depend on oxygen deficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341848
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  • 12
    Electronic Resource
    Electronic Resource
    Annealing effects for implanted Y-Ba-Cu-O superconductors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 936-938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing effects of Y-Ba-Cu-O superconductor thin films implanted by 200-keV Ne+ have been investigated. Transition temperature (Tc) end points for 0, 1×1014, 1×1015, and 1×1016 ions/cm2 doses are 75, 71, 62, and 16 K, respectively. The film implanted at 1×1017 ions/cm2 dose indicates nonsuperconductors. The c-lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for film, which is implanted at 1×1016 ions/cm2 dose, are recovered by annealing in O2 atmosphere at 940 °C for 4 h. Moreover, microcrystal growth caused by annealing the implanted film was observed on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341897
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    Preparation of Ti-Zr-B ternary amorphous alloys by a single-roller melt-spinning technique and their thermal stability (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4795-4799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous ribbons of Ti-Zr-B ternary alloys, consisting of early transition metal and metalloid elements, were formed by a single-roller melt-spinning method. Details of the quenching method employing a modified levitation melting technique are herein described. Amorphous phases were obtained in the composition range of 15 at. %≤B≤25 at. % and 20 at. %≤Zr≤50 at. %. The crystallization of the amorphous alloy took place in two steps. Initially, the amorphous phase changed polymorphously into a boron supersaturated bcc-like phase, and then this bcc-like phase decomposed into a bcc phase and a (Ti, Zr)B compound phase. The crystallization temperature was extraordinarily low (∼320 °C) in contrast to the high melting point and the strong chemical bonding between the metal and metalloid elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338340
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  • 14
    Electronic Resource
    Electronic Resource
    A new hereditary single band variant of the Gc system (1985)
    Springer
    Human genetics 〈Berlin〉 70 (1985), S. 84-85 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary A new single band variant (Gc Ar) or the Gc subtypes not identical with the known Gc variants has been detected in the plasma of a healthy blood donor by isoelectric focusing. Using this technique the variant is represented by a single band which has a similar isoelectric point to the Gc 1C2 anodal band. It is well known that the single band Gc phenotypes remain unaltered after neuraminidase treatment. Nevertheless, the new single band variant (Gc Ar) is altered after neuraminidase treatment as is Gc 2A3. After neuraminidase treatment, the Gc Ar band is affected and moved to the nearby position of the Gc 2 band. Investigation of the proband's family shows that the variant occurs combined with the common alleles Gc 1F, Gc 1S and that it has an autosomal dominant inheritance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00389466
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    Paper (German National Licenses)
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