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  • 1985-1989  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth of Si1−xGex on silicon by liquid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4445-4449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate heteroepitaxial growth of smooth homogeneous Si1−xGex layers on crystalline silicon substrates by means of liquid-phase epitaxy. For a given saturation temperature Tsat, different alloy compositions x can be grown by varying the composition of the solutions. However, smooth epitaxial layers are obtained only up to a critical germanium content xc which increases as Tsat decreases and depends upon the choice of solvent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339083
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of biaxial strain on exciton transitions of AlxGa1−xAs epitaxial layers on (001) GaAs substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2108-2113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the analysis of spectroscopic ellipsometry measurements in the temperature range between 16 and 300 K, the exciton splittings and shifts due to lattice mismatch in the AlxGa1−xAs/GaAs alloy system grown by liquid-phase epitaxy are obtained. The temperature dependence of the Ev10 and Ev20 exciton transitions shows that the difference in the expansion coefficients of the two materials does not play a significant role in the induced internal stress. The internal stresses are evaluated from an x-ray double-crystal diffraction technique. The shear deformation potential values of AlxGa1−xAs determined from the experimental results are in disagreement with those found in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344304
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Incorporation of erbium in GaAs by liquid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2803-2806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the lanthanide element erbium in GaAs during growth by liquid-phase epitaxy is investigated by low-temperature photoluminescence measurements. After an anneal of the epitaxial layers at 850 °C, a characteristic Er-associated optical transition appears at a wavelength of ∼1.55 μm, however, no erbium-related photoluminescence signal is found in the as-grown GaAs:Er layers. The Zeeman splitting of the new photoluminescence lines reveals a cubic symmetry of the optically active Er complex. Successive mechanical polishing and annealing of the layers provides evidence for the incorporation of Er within the layer as an optically inactive Er complex, which is activated only at the surface by thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337870
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1195-1197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100017
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Laser-induced chemical etching of silicon in NF3 atmosphere (1989)
    Springer
    Applied physics 48 (1989), S. 465-469 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Chemical etching of single-crystal Si in an NF3 atmosphere is performed by continuous irradiation with an Ar+ laser at 514.5 nm. The etching process proves to be a thermally stimulated chemical reaction between solid Si and NF3 gas. The experimental results show how the depth and width of the etched grooves depend on laser power, scan speed, and gas pressure. The etch rates observed may exceed 25 μm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619719
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    Paper (German National Licenses)
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