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  • 1985-1989  (11)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2088-2090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe measurements. It is shown that the correlation between both in situ techniques allows a detailed description of the optoelectronic behavior of these interfaces. The Schottky barrier at the TCO/a/Si:H interfaces, as revealed by Kelvin probe measurements, is correlated with the chemical reduction of the TCO surface during the early stage of a:Si:H growth, as evidenced by kinetic ellipsometry. In particular, indium tin oxide (ITO) and SnO2 are found to be reduced by the silane plasma at 250 °C. On the countrary, ZnO is found highly resistant upon plasma reduction. The influence of the substrate temperature during a-Si:H deposition is analyzed. Finally, the technical consequences of this study are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101511
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the substrate on the early stage of the growth of hydrogenated amorphous silicon evidenced by kinetic ellipsometry (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 360-367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast real-time ellipsometry is used to study in situ, as a function of the substrate, the growth of the first tens of monolayers of hydrogenated amorphous silicon (a-Si:H) deposited by a rf glow discharge of SiH4. The high sensitivity of this technique is illustrated and the early stage of the growth is found to strongly depend upon the nature of the substrate. A nucleation mechanism followed by incomplete coalescence is observed on metal and hydrogenated amorphous germanium (a-Ge:H) substrates. On the contrary, fused silica (SiO2) and tin dioxide (SnO2) are superficially reduced: this reduction creates at the interface a mixed layer of a-Si:H and silicon oxide on the silica substrate, and produces elemental tin at the surface of the SnO2 substrate. In this last case, tin is found to diffuse in the further a-Si:H growing film. On crystalline silicon (c-Si), the a-Si:H growth shows incomplete coalescence followed by homogeneous growth, probably together with the reduction of the native c-Si oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340247
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  • 3
    Electronic Resource
    Electronic Resource
    A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3023-3034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ fast kinetic ellipsometry is used to investigate the early stage of the growth of hydrogenated amorphous silicon (a-Si:H) on tin-doped indium oxide (ITO), tin oxide (TO), and zinc oxide substrates. Transparent conducting oxide (TCO) substrates obtained from various sources and deposited by different techniques are studied. A wide range of deposition parameters of a-Si:H films is considered. For a comparison with growth of amorphous silicon from silane, the ellipsometry data on pure hydrogen plasma degradation of TCO surfaces are also presented. In case of ITO and TO films, a two-step deposition is observed: the first step is dominated by the reduction of TCO and formation of metallic In or Sn (≈10 s time scale) and the second step is the subsequent growth of a-Si:H on the reduced substrates. In contrast, ZnO does not show any reduction. The substrate temperature during a-Si:H deposition is found to have the most important influence on the chemical reduction of the substrates. Variations of other deposition parameters like rf power, total gas pressure, ion bombardment, and p- or n-type doping do not lead to a reduction-free deposition on ITO and TO films. The substrate surface roughness plays an important role during the long-term growth of a-Si:H. In particular, a memory of surface roughness of the TCO substrates is retained in the growing a-Si:H films. The technological consequences of this study are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342694
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  • 4
    Electronic Resource
    Electronic Resource
    In situ investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2501-2508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ investigation of the growth of rf glow-discharge amorphous germanium (a-Ge:H) and silicon (a-Si:H) films using fast real-time spectroscopic phase-modulated elipsometry is presented. The influence of the conditions of preparation is studied in both cases. The same behavior is obtained in a-Ge:H and a-Si:H films deposited in similar conditions. In particular, the initial stage of the growth can be described by a nucleation process in both cases, whatever the conditions of preparation. The incomplete coalescence of the nuclei leads to the formation of a surface roughness on a ∼40-A(ring) scale which is observed during film growth. In comparing real-time ellipsometry measurements performed at different wavelengths, a correlation between the internuclei distance and the thickness of the surface roughness is observed. An enhancement of the surface mobility of the reactive species due to an increase of substrate temperature and/or ion-bombardment energy results in an increase in the density of the nucleation centers. The influence of ion bombardment and gas pressure is discussed by comparing the growth of a-Si:H film deposited in a rf discharge to the results of previous studies using a low-pressure multipole plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337924
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry study of the In1-xGaxAsyP1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3512-3518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1-xGaxAsy/InP and InP/In1-xGaxAsyP1-y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) A(ring) thick. The importance of performing in situ SE measurements is emphasized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337603
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  • 6
    Electronic Resource
    Electronic Resource
    In situ investigation of the microcrystalline germanium nucleation and growth processes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 145-151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous (a) to microcrystalline (μc) transition, induced by the increase of the ion bombardment energy Eion and the substrate temperature Ts , is investigated on glow-discharge deposited germanium thin films. This transition and the deposition of μc-Ge on metallic substrates are observed in situ by kinetic and spectroscopic phase modulated ellipsometry (SPME) over the range 1.7–4.5 eV. The ion bombardment energy corresponding to the transition a-μc (Eion∼120 eV) decreases as a function of Ts in the range 160–280 °C. Decreasing Eion (or Ts) results in the reverse transition. The μc-a transition is found at a ∼50 eV (or ∼120 °C) lower value, giving evidence of an epitaxial growth effect. The kinetics of the growth processes is deduced from the SPME data by using an effective medium approximation. The early stage of the growth is accurately described by the nucleation of microcrystalline islands at a 50 A(ring) level; the time dependence being coherent with a low surface mobility of the diffusing species. During the growth, a composition depth profile is observed; the ∼150 A(ring) thick surface layer being more amorphous than the bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341447
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared ellipsometry study of the vibrational properties and the growth of hydrogenated amorphous silicon ultrathin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5088-5091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first experimental study of hydrogenated amorphous silicon (a-Si:H) ultrathin films (df 〈500 A(ring)) deposited on glass substrates using infrared spectroscopic phase-modulated ellipsometry is presented. The high sensitivity of this new technique is emphasized. In particular, SiH and SiH2 stretching bonds are identified on 50-A(ring)-thick samples. It is shown that the structure of a-Si:H in the early stage of the growth (df 〈100 A(ring)) may differ considerably from that of bulk materials: Hydrogen–silicon bonds are not observed in the first few seconds of the growth and the imaginary part of the dielectric function of the film is found to increase with df. These behaviors are attributed to an interaction of the growing film with the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340408
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  • 8
    Electronic Resource
    Electronic Resource
    In situ spectroscopic ellipsometry study of the growth of microcrystalline silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1542-1544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High sensitivity, high-energy resolution, and the capability to obtain data in situ make ellipsometry a useful tool for addressing a number of problems in thin-film deposition processes. Dielectric functions ε˜=ε1−i ε2 of glow-discharge-produced microcrystalline silicon films (μc-Si) are determined by using spectroscopic ellipsometry (SE). ε2 spectra present a shoulder near 4.2 eV which corresponds to the E2 optical transition observed in crystalline silicon. This peak is not observed in amorphous silicon spectra. c-Si is described as a mixture of amorphous phase, microcrystallites, and voids. The choice of the microcrystalline reference phase is discussed in particular by comparing the microcrystallite volume fraction determined from SE and x-ray measurements. Strong variations in the nature of the material are observed during growth: the density deficiency and the surface roughness both increase as functions of film thickness up to 0.4–0.5 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337289
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  • 9
    Electronic Resource
    Electronic Resource
    Improvements of phase-modulated ellipsometry (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 65-77 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article gives several new insights on ellipsometers using photoelastic modulators. The assumption that the modulation has the form δ=δ0+A sin ωt is ruled out. In contrast, it is shown that the presence of higher harmonics in the modulation affects the measured signal. A new formalism is proposed to take this effect into account, and experimental evidences of its consistency and relevance are exposed. Using this multiple-harmonic model, ellipsometric measurements showed a dispersion four to five times less than using the conventional model. A new method is proposed to adjust the modulation amplitude during the measurements, by measuring the third harmonic of the signal. It is proven experimentally that this method actually improves the precision of phase-modulated ellipsometry. Other sources of errors are reviewed, such as multiple reflections in coherent light. A practical procedure to test whether a modulator is well adapted to ellipsometry is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140580
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen content of amorphous silicon films deposited in a multipole plasma (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 535-540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) samples are prepared in highly controlled conditions in a multipole dc discharge. Hydrogen content of the film is systematically analyzed as a function of deposition parameters such as ion flow, ion bombardment energy Eion, and substrate temperature. Hydrogen atomic concentration and profile are measured by nuclear reaction analysis. The essential role of ion bombardment is emphasized. Increasing deposition temperature and/or decreasing Eion results in a large decrease of the hydrogen content. Hydrogen-enriched surfaces are observed when Eion(approximately-less-than)10 eV. It is shown that SinH+m bombardment during film growth produces a dense hydrogen-rich material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335658
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