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  • 1
    Electronic Resource
    Electronic Resource
    Improvements of phase-modulated ellipsometry (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 65-77 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article gives several new insights on ellipsometers using photoelastic modulators. The assumption that the modulation has the form δ=δ0+A sin ωt is ruled out. In contrast, it is shown that the presence of higher harmonics in the modulation affects the measured signal. A new formalism is proposed to take this effect into account, and experimental evidences of its consistency and relevance are exposed. Using this multiple-harmonic model, ellipsometric measurements showed a dispersion four to five times less than using the conventional model. A new method is proposed to adjust the modulation amplitude during the measurements, by measuring the third harmonic of the signal. It is proven experimentally that this method actually improves the precision of phase-modulated ellipsometry. Other sources of errors are reviewed, such as multiple reflections in coherent light. A practical procedure to test whether a modulator is well adapted to ellipsometry is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140580
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  • 2
    Electronic Resource
    Electronic Resource
    Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W−1 at 7 μm wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111129
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  • 3
    Electronic Resource
    Electronic Resource
    High quality aluminum nitride epitaxial layers grown on sapphire substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 339-341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00⋅1) sapphire exhibited a better crystalline quality than that grown on (01⋅2) sapphire. An x-ray rocking curve of AlN on (00⋅1) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01⋅2) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00⋅1) Al2O3 was about 197 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111168
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  • 4
    Electronic Resource
    Electronic Resource
    Detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5820-5828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A room-temperature electron Hall mobility of 2×104 cm2/V s has been obtained for a 2-μm-thick layer. Low-temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three-layer Hall-effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n-type behavior for a p-type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358395
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal stability of GaN thin films grown on (0001) Al2O3, (011¯2) Al2O3 and (0001)Si 6H-SiC substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 236-241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of GaN were grown on (0001), (011¯2) Al2O3 and (0001)Si 6H-SiC substrates using an atmospheric pressure metalorganic chemical-vapor-deposition reactor. The relationship has been studied between the thermal stability of the GaN films and the substrate's surface polarity. It appeared that the N-terminated (0001) GaN surface grown on (0001)Si 6H-SiC has the most stable surface, followed by the nonpolar (112¯0) GaN surface grown on (011¯2) Al2O3, while the Ga-terminated (0001) GaN surface grown on (0001) Al2O3 has the least stable surface. This is explained with the difference in the atomic configuration of each of these surfaces which induces a difference in their thermal decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357133
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  • 6
    Electronic Resource
    Electronic Resource
    p-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2126-2128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched p-doped GaAs–Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 A(ring). Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig–Penney calculations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360194
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  • 7
    Electronic Resource
    Electronic Resource
    Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 700-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Special double- and separate-confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements have been grown by low-pressure metal-organic chemical-vapor deposition. The band gap of the active region quaternary material was close to 1.5 eV, and the waveguide of the separate-confinement structures was near 1.8 eV. Measurement of the integrated luminescence efficiency at 300 K has shown that over a wide range of excitation level (10–103 W/cm2) radiative transitions are the dominant mechanism for excess carrier recombination in the active region of the structures studied. As determined by spectral measurements, the excess carrier concentration in the waveguide of the separate-confinement heterostructures and the intensity of the waveguide emission band correspond to a condition of thermal equilibrium of the excess carrier populations in the active region and the waveguide. The ratio of the intensity of the waveguide emission to the active region emission fits a model which assumes that the barrier height for minority carriers (holes) is equal to the difference in band gaps between the active region and the waveguide region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358519
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3196-3198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356121
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  • 9
    Electronic Resource
    Electronic Resource
    Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 22-24 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115479
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  • 10
    Electronic Resource
    Electronic Resource
    Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1130-1132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x-ray diffraction. A narrow low-temperature photoluminescence full width at half-maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112119
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