Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (4)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Resistivity of the solid solutions (Co-Ni)Si2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 177-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid solutions of CoSi2 and NiSi2 were prepared from the solid-state reaction of thin films of Ni-Co alloys with their silicon substrates. The room-temperature resistivity of these silicide solid solutions does not increase parabolically, but (within the sensitivity of the measurements) varies linearly with composition. A model is proposed which explains the very weak alloy scattering on the basis that in these disilicides (a) the d bands are pushed below the Fermi level, (b) conduction occurs mostly via s electrons, and (c) there is no s-d scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of B- and Ge-implanted Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1155-1158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge diffusion after solid-phase epitaxy of Si amorphized by Ge++ implantation has been measured by backscattering spectrometry. Asymmetrically enhanced diffusion is observed for 〈111〉-oriented samples annealed at 1050 °C. A high concentration of twins observed by cross-section transmission electron microscopy seems to be connected to the enhancement. There is a large difference in Ge diffusion as well as defect structure between 〈100〉- and 〈111〉-oriented samples. Hole mobilities and sheet resistivities have been measured and compared for B- and B+Ge-implanted samples. The effect of Ge on the electrical properties is small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343456
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1753-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier diodes have been fabricated by evaporation of Pt on Si substrates followed by annealing at 500 °C to yield PtSi. Then V and Al were evaporated. The amount of oxygen intentionally incorporated in the V film during deposition was varied and the resulting effect on the diffusion barrier action of the vanadium film has been studied by I-V and C-V measurements of the diodes and by backscattering spectrometry of simultaneously prepared test samples. It is found that for V films with low oxygen concentrations annealing in the range 400–600 °C leads to the formation of VAl3 and subsequent barrier height change. For vanadium films containing 50-at. % oxygen there is no observable reaction between V and Al and the barrier height is preserved for annealing between 400 and 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337775
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Al(Ge) metallization: The effect of Ge on the solubility of Si in Al (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4459-4462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contact resistance between Al(Ge) alloys of various compositions and n+Si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 350–500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336254
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...