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  • 1
    Electronic Resource
    Electronic Resource
    Submerged Biotower Technology for Tertiary Nitrification of Poultry Abattoir Wastewater (2000)
    Oxford, UK : Blackwell Publishing Ltd
    Water and environment journal 14 (2000), S. 0 
    Details
    ISSN: 1747-6593
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: The paper describes the design and operation of a submerged biotower, i.e. flooded upflow reactor which utilises a random-packed polypropylene medium for supporting the biomass. The process can be used for carbonaceous removal or nitrification. In the application which is described, the process has been used for tertiary nitrification of a poultry abattoir wastewater as an extension to the existing effluent-treatment plant. Details of process commissioning at low temperatures are given and results from twelve months’operation are discussed. Operating costs are compared with other processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1747-6593.2000.tb00223.x
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  • 2
    Electronic Resource
    Electronic Resource
    Displacement damage equivalent to dose in silicon devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle-induced displacement damage effects in silicon bipolar transistors, including those due to electrons and to fission neutrons, are correlated on the basis of the nonionizing energy deposited in the lattice by the primary knock-on atoms. Deviations from linearity between damage effects and energy deposition are in a direction opposite to those expected from defect cluster models but can be accounted for in terms of the fraction of vacancy-interstitial pairs initially formed that survive recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100949
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Al(Ge) metallization: The effect of Ge on the solubility of Si in Al (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4459-4462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contact resistance between Al(Ge) alloys of various compositions and n+Si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 350–500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336254
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    Paper (German National Licenses)
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