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  • 1
    Electronic Resource
    Electronic Resource
    Sequential resonant and nonresonant tunneling in GaAs/AlGaAs multiple quantum wells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2689-2691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential resonant and nonresonant tunneling have been investigated in doped GaAs/AlGaAs multiple quantum wells. Negative differential resistance attributable to high field domains expanding through the structure are observed. It is argued that the conductance mechanism is changing with increasing bias, from resonant ground-state tunneling in the low bias regime to nonresonant ground and ground to first exited state in the oscillating differential resistance regime. At higher bias the evolution from nonresonant to resonant tunneling is studied. Calculated tunneling currents are in good agreement with the measured currents both for on and off resonance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348668
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice-matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 382-384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth of lattice-matched Sc1−xErxAs layers buried in GaAs with a room-temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice-matched rare-earth monopnictides and monochalcogenides in semiconductors. Reflection high-energy electron diffraction oscillations during ScAs, ErAs, and Sc1−xErxAs growth indicate monolayer-by-monolayer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102792
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1753-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier diodes have been fabricated by evaporation of Pt on Si substrates followed by annealing at 500 °C to yield PtSi. Then V and Al were evaporated. The amount of oxygen intentionally incorporated in the V film during deposition was varied and the resulting effect on the diffusion barrier action of the vanadium film has been studied by I-V and C-V measurements of the diodes and by backscattering spectrometry of simultaneously prepared test samples. It is found that for V films with low oxygen concentrations annealing in the range 400–600 °C leads to the formation of VAl3 and subsequent barrier height change. For vanadium films containing 50-at. % oxygen there is no observable reaction between V and Al and the barrier height is preserved for annealing between 400 and 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337775
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Al(Ge) metallization: The effect of Ge on the solubility of Si in Al (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4459-4462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contact resistance between Al(Ge) alloys of various compositions and n+Si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 350–500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336254
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  • 5
    Electronic Resource
    Electronic Resource
    Resistivity of the solid solutions (Co-Ni)Si2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 177-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid solutions of CoSi2 and NiSi2 were prepared from the solid-state reaction of thin films of Ni-Co alloys with their silicon substrates. The room-temperature resistivity of these silicide solid solutions does not increase parabolically, but (within the sensitivity of the measurements) varies linearly with composition. A model is proposed which explains the very weak alloy scattering on the basis that in these disilicides (a) the d bands are pushed below the Fermi level, (b) conduction occurs mostly via s electrons, and (c) there is no s-d scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336858
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Polarity of small {111}GaAs domains on (100)Sc0.32Er0.68As formed during molecular-beam epitaxial growth (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2499-2501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxial growth of GaAs on (100)ScxEr1−xAs can result in domains of various orientations. Most of the GaAs domains are of the epitaxial (100) or the twin related (221) orientation. A {111} orientation is also common. We have studied the orientational relationships of these domains by transmission electron microscopy. The polarity of small {111}GaAs domains on (100)ScErAs have been determined by electron channeling. We observe that the polarity is such that the GaAs [1¯1¯1¯] direction (as opposed to the [111] one) points outward from the original ScxEr1−xAs(100) surface. We use this observation in discussing possible models of the interface between ScErAs and GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110461
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of B- and Ge-implanted Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1155-1158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge diffusion after solid-phase epitaxy of Si amorphized by Ge++ implantation has been measured by backscattering spectrometry. Asymmetrically enhanced diffusion is observed for 〈111〉-oriented samples annealed at 1050 °C. A high concentration of twins observed by cross-section transmission electron microscopy seems to be connected to the enhancement. There is a large difference in Ge diffusion as well as defect structure between 〈100〉- and 〈111〉-oriented samples. Hole mobilities and sheet resistivities have been measured and compared for B- and B+Ge-implanted samples. The effect of Ge on the electrical properties is small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343456
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  • 8
    Electronic Resource
    Electronic Resource
    Respective mobilities of metal and silicon in disilicides: Bilayers of chromium with molybdenum or tungsten (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2410-2414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behaviors of metallic bilayers, chromium-molybdenum and chromium-tungsten, on (100) silicon during isochronal annealing have been studied by Rutherford backscattering of 2.3-MeV 4He+ ions and x-ray diffraction. These experiments were conducted with the aim of obtaining information about the respective mobilities of silicon and metal atoms in the different silicides through a comparison of the temperatures at which the silicides form and those at which they mix (through metal-atom diffusion). The results confirm that the respective silicides form via silicon-atom motion and that the mobilities of the metal atoms are markedly smaller than that of the silicon atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345543
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