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  • 1985-1989  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Measurements of deep levels in high-purity molecular beam epitaxial GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5287-5289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant capacitance deep-level transient spectroscopy measurements are performed on molecular beam epitaxially grown GaAs layers with net carrier concentrations of 3.3–6.5×1014 cm−3. Four trap levels are detected, three of which are usually detected in molecular beam epitaxial layers, and the fourth, a very shallow trap at 30 meV, has not been previously reported. Determination of the concentrations for this new level dispute the accepted interpretation of Hall measurements near and above room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334843
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of p-type ZnSe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1103-1105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers doped with lithium have been found to be p type with resistivities as low as 2.9 Ω cm. The majority-carrier types of these films were determined using both capacitance-voltage and potential profiling techniques. The sample resistivities were obtained using ac resistivity measurements and potential profiling. Uncompensated acceptor densities have been measured to be as high as 8×1016 cm−3 using capacitance-voltage profiling. Current-voltage traces taken with evaporated and sputtered gold contacts typically show reverse breakdown which is consistent with avalanche breakdown in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101670
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×1016 and 1×1019 cm−3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101237
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Internal photoemission and band discontinuities at Ga0.47In0.53As-InP heterojunctions (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1457-1459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal photoemission has been observed in the spectral response of specially designed Ga0.47In0.53As-InP p+N− heterojunction photodiodes. Power-law fits to the internal photoemission as a function of photon energy allow precise determination of threshold energies from which the conduction-band discontinuity is easily and accurately deduced to be ΔEc=203±15 meV at room temperature. These measurements have been performed at temperatures from 135 to 297 K. The temperature dependence of ΔEc is described by ∂(ΔEc)/∂T=−0.2±0.1 meV/K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100696
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  • 5
    Electronic Resource
    Electronic Resource
    Generation of an anomalous hole trap in GaAs by As overpressure annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in high-purity n-type molecular beam epitaxy (MBE) GaAs and in undoped n-type metalorganic chemical vapor deposition (MOCVD) GaAs samples annealed with various As overpressures were investigated using constant capacitance deep level transient spectroscopy on evaporated Au Schottky barrier diodes. Anomalous hole traps, which could be measured because of a surface effect, were observed in all annealed samples. EL2 traps were created in the MBE material by the annealing, while the concentration of EL2 in the annealed MOCVD material was about the same as that before annealing. The effect of annealing on the other electron traps in these samples is also studied and reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99216
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  • 6
    Electronic Resource
    Electronic Resource
    Subthreshold electron velocity-field characteristics of GaAs and In0.53Ga0.47As (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2295-2298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron drift velocities in GaAs and In0.53Ga0.47As have been measured at room temperature and at liquid-nitrogen temperature for electric fields up to the onset of the Gunn effect. The experiments were performed on samples with carrier concentrations from 4×1014 to 1×1018 cm−3. The results illustrate effects of ionized impurity scattering, polar optical phonon scattering, alloy scattering, and intervalley scattering on electron transport in this range of electric fields, and confirm the potential of In0.53Ga0.47As for high-speed device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335464
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of the tetrahydrofuran adduct of mono-N-lithio-hexamethylcyclotrisilazane (1986)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 42 (1986), S. 1009-1011 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S010827018609368X
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    TRUNC for shells - an element possibly to the taste of Bruce Irons (1986)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 22 (1986), S. 93-115 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: In his delightful and original textbook,18 Bruce Irons introduces the chapter of plate bending with the remark ‘History of disasters, but the pioneering days are past’. This is certainly true. On the other hand, we learn in the same context from Irons: ‘We believe that the world has not yet exhausted the older formulations.’ In this paper we present a review of theoretical aspects of the plate-bending triangle TRUNC (Reference 4), together with extensive tests in linear statics, dynamics, buckling and nonlinear large deformations both for plates and shells. The unconventional TRUNC model is based on the patch test, which was originated by Irons.1 In spite of its limited theoretical foundation, the performance of this element on a fairly broad field of applications appears at least from the practical point of view very satisfactory.
    Additional Material: 23 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620220108
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  • 9
    Electronic Resource
    Electronic Resource
    Halogen- und aminofunktionelle Tris(trimethylsilyl)silyl-silane (1985)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 524 (1985), S. 106-110 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Halogeno- and Aminofunctional Tris(trimethylsilyl)silyl-silanesLithium-tris(trimethylsilyl)silane 1 reacts with halogenosilanes to give thermally stable compounds of the type (2-11). The substitution of the bulky (trimethylsilyl)amino group occurs in reactions of 1 with aminofluorosilanes  -  (12-14). In excess 1 reacts with 2-14 under formation of (Me3Si)4Si. The substitution compounds 15-17 are obtained in the reaction of 3 and 9 with lithium salts of primary amines. The 1,3-diaza-2,4-disilacyclobutan 18 is formed by HF-elimination of 15.
    Notes: Lithium-tris(trimethylsilyl)silan 1 reagiert mit Halogensilanen zu thermisch stabilen Verbindungen des Typs (2-11). In Reaktionen von 1 mit Aminofluorsilanen gelingt der Einbau der voluminösen Trimethylsilylaminogruppe  -  (12-14). Überschüssiges 1 reagiert mit 2-14 weitgehend zu (Me3Si)4Si. Aus 3 und 9 wurden in Reaktionen mit Lithiumsalzen primärer Amine die Substitutionsverbindungen 15-17 erhalten. Die HF-Eliminierung aus 15 führt zur Bildung des 1,3-Diaza-2,4-disilacyclobutan 18.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19855240515
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