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  • 1
    Electronic Resource
    Electronic Resource
    Photo-Hall studies of high-purity GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7425-7433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity GaAs layers which are nearly or fully depleted of carriers at low temperatures, due to surface and interface depletion effects, can be characterized electrically by utilizing the phenomenon of persistent photoconductivity. To facilitate electrical measurements of such layers, at 4.2 K the sample is momentarily illuminated by above band-gap light, which causes a reduction in the surface and interface depletion region. After illumination the effects of the photoinduced charge neutral region persist until at some higher temperature, the charge distribution in the sample relaxes back to its original equilibrium state. Results of variable temperature Hall-effect measurements performed under these conditions show that the sheet carrier concentration is increased as compared to measurements obtained in the dark but that the mobility is unchanged. The increase in the sheet carrier concentration after illumination results from the decrease of the surface and interface depletion widths. Such measurements can provide a method for judging the quality of layers that are fully depleted of carriers. The mobility of a high-purity GaAs layer which becomes fully depleted of carriers at low temperatures in the dark, measures 180 000 cm2/V s at 77 K by this method. Photocapacitance-voltage profiling measurements clearly show the change in the depletion widths. A model is presented which accurately depicts the temperature dependence of the band-bending potentials at the surface and interface after illumination with above band-gap light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349738
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of deep levels in high-purity molecular beam epitaxial GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5287-5289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant capacitance deep-level transient spectroscopy measurements are performed on molecular beam epitaxially grown GaAs layers with net carrier concentrations of 3.3–6.5×1014 cm−3. Four trap levels are detected, three of which are usually detected in molecular beam epitaxial layers, and the fourth, a very shallow trap at 30 meV, has not been previously reported. Determination of the concentrations for this new level dispute the accepted interpretation of Hall measurements near and above room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334843
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of Schottky contacts to N-type ZnS0.07Se0.93 epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3513-3517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky contacts were formed on Cl-doped N-type lattice matching ZnS0.07Se0.93 epilayers grown on (100) N-GaAs substrates by molecular beam epitaxy for metals with different work functions, Yb, Al, Cr, Cu, Au, and Pd. Temperature-dependent current-voltage and capacitance-voltage (C-V) measurements show a clear relation between Schottky barrier height and metal work function which cannot be predicted by the linear Schottky contact theory, ΦSB=ΦM−χ. The pinning effect is believed to exist at the metal-semiconductor interface with a wide range of Fermi level pinning positions. Thermionic emission dominates the current transport mechanism and the current is limited by the ZnSSe/GaAs heterojunction under a relatively high positive bias. A symmetriclike C-V characteristic is explained by the Schottky barrier-heterojunction model and a fairly constant heterojunction barrier height, ΦHJ, is obtained for Schottky diodes using different metals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358645
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  • 4
    Electronic Resource
    Electronic Resource
    Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 616-618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal photoemission has been observed in GaAs-Ga0.52In0.48P p-I-N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy-band discontinuities in this heterostructure material system. The results indicate a conduction-band discontinuity of ΔEc=108±6 meV at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104574
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  • 5
    Electronic Resource
    Electronic Resource
    Electromigration in p-type ZnSe:Li (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1173-1174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration has been observed in certain Li-doped p-type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light-emitting diodes is considered, and shown to be beneficial in devices with compensated p-type layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104355
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  • 6
    Electronic Resource
    Electronic Resource
    Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3591-3593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction-band offsets in wide-band-gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 A(ring) thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction-band offset energy of ∼251±20 meV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116647
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of p-type ZnSe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1103-1105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers doped with lithium have been found to be p type with resistivities as low as 2.9 Ω cm. The majority-carrier types of these films were determined using both capacitance-voltage and potential profiling techniques. The sample resistivities were obtained using ac resistivity measurements and potential profiling. Uncompensated acceptor densities have been measured to be as high as 8×1016 cm−3 using capacitance-voltage profiling. Current-voltage traces taken with evaporated and sputtered gold contacts typically show reverse breakdown which is consistent with avalanche breakdown in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101670
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 848-850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of high quality ZnSe films has been achieved at growth temperatures as low as 150 °C by using elemental zinc and thermally cracked selenium as source materials. Crystallinity of the films was determined by the Zn/Se flux ratio rather than by the growth rate; it was possible to grow good crystalline films at growth rates from 0.5 to 1 μm/h. Photoluminescence and x-ray measurements indicated that there is little degradation in the film quality as the growth temperature is lowered from 350 to 150 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102681
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 42-44 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102641
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  • 10
    Electronic Resource
    Electronic Resource
    p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2127-2129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm−3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103919
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