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  • 1985-1989  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Composition dependence of superconducting properties in Bi2(Sr1−xCax)n+1CunOy (n=2, 3) thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1213-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr1−xCax)n+1CunOy (n=2, 3) system were prepared on (100)MgO substrates by coevaporation of Bi2O3, Sr-Ca alloy, and Cu metal. The lattice constant of the c axis of the low Tc (∼85 K) phase (n=2) decreased with increasing Ca composition x. The superconducting transition temperatures of both the low Tc phase and high Tc (∼110 K) phase (n=3) decreased with increasing x. These tendencies indicated that both the low Tc phase and the high Tc phase have a mutual solubility between Ca and Sr atoms in this Bi system and that the Tc 's of these two phases are related to the c-axis lattice constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100668
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101574
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Preferentially oriented epitaxial Y-Ba-Cu-O films prepared by the ion beam sputtering method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1292-1295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented epitaxial Y-Ba-Cu-O films were prepared on (100) SrTiO3 substrates by oxygen reactive ion beam sputtering. The epitaxial orientations were varied by controlling both substrate temperature and oxygen parital pressure. c-axis oriented films tended to be formed at higher substrate temperatures (〉620 °C) and lower oxygen pressures (〈3×10−3 Torr). In contrast, a/c- and a-axis oriented films were formed at lower substrate temperatures (〈600 °C) and higher oxygen pressures (〉3×10−3 Torr). The best Tc (end) of 82 K was observed in one of the c-axis oriented film without post-annealing. The tendency for preferential orientation can be well understood in terms of the lattice mismatch between the substrate and the film, the lattice constants of which depend on oxygen deficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341848
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Single-roller rapid quenching of high melting temperature alloys using plasma-arc melting (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 396-400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-roller rapid quenching apparatus with a plasma-arc torch and a water-cooled copper hearth has been developed for the rapid quenching of high melting temperature alloys (mp〉2000 °C). Details of the apparatus and a mathematical analysis of thermal conditions during the quenching process are described together with the results obtained from high melting temperature alloy experiments. Amorphous ribbons were obtained from Nb80Si20, Nb3Ge, and Ta–(Si,B) alloys. Amorphous Nb3Ge ribbon was successfully converted into an A15 single phase by heat treatment, and showed a superconducting transition temperature as high as 18.3 K. Crystallization of Ta80Si10B10 amorphous ribbon was observed at a very high temperature of 1233 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337661
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation of Ti-Zr-B ternary amorphous alloys by a single-roller melt-spinning technique and their thermal stability (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4795-4799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous ribbons of Ti-Zr-B ternary alloys, consisting of early transition metal and metalloid elements, were formed by a single-roller melt-spinning method. Details of the quenching method employing a modified levitation melting technique are herein described. Amorphous phases were obtained in the composition range of 15 at. %≤B≤25 at. % and 20 at. %≤Zr≤50 at. %. The crystallization of the amorphous alloy took place in two steps. Initially, the amorphous phase changed polymorphously into a boron supersaturated bcc-like phase, and then this bcc-like phase decomposed into a bcc phase and a (Ti, Zr)B compound phase. The crystallization temperature was extraordinarily low (∼320 °C) in contrast to the high melting point and the strong chemical bonding between the metal and metalloid elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338340
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties of a new hard magnet alloy (Fe40Co40Mn20)98.6−xCxSi1.4 (x∼0.4) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4164-4166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new hard magnet alloy, (Fe40Co40Mn20)98.6−xCxSi1.4(x∼ 0.4) was developed. The alloy permits heavy cold-working wherein optimum magnetic properties can be obtained by a suitable heat-treatment after the cold-working, that is, bHc=54.9–63.7 kA/m, Br=0.24–0.47 T, and (BH)max=5.6–11.2 kJ/m3. The alloy retains its high temperature fcc form (nonmagnetic phase) by a quenching, whereas a cold-working produces a small volume of ferromagnetic phase which is transformed in a martensitic style. Heat-treatment at about 400–600 °C causes a bcc phase precipitation, resulting in a fine lamella mixture of magnetic and nonmagnetic phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335476
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Intravenous gamma globulin therapy for thrombocytopenic purpura associated with active varicella infection (1987)
    Springer
    European journal of pediatrics 146 (1987), S. 531-532 
    Details
    ISSN: 1432-1076
    Keywords: Varicella ; Thrombocytopenia ; Gamma globulin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Thrombocypenic purpura was noted in a 3-year-old Japanese girl with an active varicella infection. The administration of intravenous gamma globulin (IVG) drastically improved bleeding manifestations as well as the active varicella infection. We believe that IVG should be the first choice of therapy for thrombocytopenic purpura associated with active infections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00441611
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