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  • 1
    Electronic Resource
    Electronic Resource
    Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid-encapsulated Czochralski technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2201-2203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the extended x-ray absorption fine structure method, we have studied the local structures around Zn atoms in Zn-doped GaAs crystal grown by the liquid-encapsulated Czochralski technique. Zn atoms, whose concentration is about 2.4×1018 cm−3, have the first nearest neighbor atoms at a very short distance of about 1.95 A(ring) and the second nearest neighbor atoms at a distance of about 3.15 A(ring). The Zn atom configuration forms "interstitialcy'', not substitutional, tetrahedral, or hexagonal sites. As the Zn concentration increases, however, Zn atoms have a tendency to occupy substitutional sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101123
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Small lattice relaxation at the DX center as studied by extended x-ray absorption fine structure on Se-doped AlGaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 126-128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice relaxation at the Se DX center in Al0.38Ga0.62As was determined by the extended x-ray absorption fine structure (EXAFS). During the EXAFS measurements the deep and shallow (metastable) states of the DX center were prepared and the resultant difference of the nearest-neighbor distance around Se between the two electronic states was found to be quite small (less than 0.04 A(ring)). The result is indicative of small lattice relaxation at the DX center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99071
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  • 3
    Electronic Resource
    Electronic Resource
    Local structure around Zn atoms diffused into the GaAs crystal (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1390-1392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies occur. Extra second NN atoms are located at a distance of 3.35 A(ring) which is a bit less than the distance to position on a hexagonal site, and the third NN atoms are observed at a distance of 3.97 A(ring). From the above results, almost all Zn atoms occupy the substitutional site.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99986
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  • 4
    Electronic Resource
    Electronic Resource
    Equi-lattice-spacing mapping X-ray topography (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 344-348 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new X-ray topographic method is described which images with similar contrast those parts which have the same lattice spacings in an inhomogeneous single-crystal irrespective of the lattice inclination. This method was applied to GaAs, in which a variation of Δd/d ≲ 10−5 was topographically resolved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889887086503
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  • 5
    Electronic Resource
    Electronic Resource
    Transient shear flow properties of fiber-filled polyethylene melts (1986)
    Springer
    Rheologica acta 25 (1986), S. 606-617 
    Details
    ISSN: 1435-1528
    Keywords: Transient shear flow ; shear stress ; normal stress ; fiber-filled polymer melt ; constitutive equation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Abstract The growth and relaxation of shear and normal stresses have been investigated for glass and carbon fiber-filled polyethylene melts over a wide range of shear rates and temperatures by means of a cone-and-plate rheogoniometer. Flow parameters and flow curves characterizing the stress overshoot and relaxation phenomena of the fiber-filled systems were determined experimentally. The influence of fiber loading, fiber size and temperature on the transient flow parameters are discussed. Predictions by the Meister and Bogue constitutive equations were compared with the experimental data for the transient shear and normal stresses. These equations predict satisfactorily the non-linear transient shear flow of polymer melts and its fiber-filled systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01358169
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