Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2686-2688
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple-line low-temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101035
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
