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  • 1985-1989  (10)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Electric field depressed emission from a Au/GaAs near-interface state (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 540-542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous wave laser annealing was carried out on liquid phase epitaxy GaAs material. A new defect termed PL1 localized near the Au/GaAs interface was detected by deep level transient spectroscopy. This defect is related to the formation of an oxide layer at the GaAs surface during the treatment. Completely new physical behavior of this defect is observed. Deep level optical spectroscopy and deep level transient spectroscopy have shown that the emission of PL1 is depressed by the electric field. This result is discussed in view of other electric field effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100924
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 898-900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the epitaxy of CoSi2 on 〈111〉 Si submicron lines together with the overgrowth of Si on top of the resulting grating. Results indicate that strain fields and huge mass transport control the morphology of the resulting structures. Silicon is shown to grow two dimensionally when the grating period is in the submicrometer range. Preliminary results on the electrical performance of those Si/CoSi2 /Si permeable base transistors are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99266
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  • 3
    Electronic Resource
    Electronic Resource
    Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1448-1450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin films ((approximately-less-than)50 monolayers) of Co have been deposited on atomically clean 7×7 Si(111) surfaces at room temperature and characterized by in situ surface techniques such as Auger electron spectroscopy and low-energy electron diffraction. Formation of a boundary CoSi2-like phase is surprisingly found at a very low coverage range ((approximately-less-than)4 monolayers) as evidenced by low-temperature transport measurements (resistivity and Hall effect) and also by cross-sectional high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98653
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical transport properties in epitaxial codeposited CoSi2 layers on 〈111〉 Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 788-790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements (resistivity, Hall effect, and superconducting critical temperature) are performed in epitaxial CoSi2 layers obtained by room-temperature codeposition of Co and Si on 〈111〉 Si subsequently annealed between 250 and 650 °C. On the one hand, the CoSi2 layers annealed at low temperature (250–350 °C) exhibit poorer electrical characteristics than the films realized by solid phase epitaxy at 650 °C, because of both a lack of carriers and a degraded mobility. A possible origin of this fact could be the presence of unreacted Co atoms in the metal layer. On the other hand, the films annealed ex situ at 700 °C show excellent electrical characteristics, together with mirror-like surfaces and extremely smooth Si/CoSi2 interfaces, for silicide thicknesses ranging from 35 up to 500 A(ring). Furthermore, by comparing the films obtained by the solid phase epitaxy and the codeposition techniques, we show that the long-range roughness (few hundreds of angstroms) has no major influence on the steep increase of resistivity with decreasing film thicknes observed in ultrathin CoSi2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100560
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature transport properties of ultrathin CoSi2 epitaxial films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 169-171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature transport measurements (down to 18 mK) are performed in CoSi2 ultrathin films (down to 1.4 nm) epitaxially grown on silicon substrates. The low-temperature residual resistivity exhibits little dependence on the CoSi2 film thickness down to 10 nm. However, a steep increase is found below 10 nm, which is not taken into account by the Fuchs–Sondheimer [Proc. Cambridge Philos. Soc. 34, 100 (1938)] boundary scattering theory. Correlatively, the superconducting critical temperature of these CoSi2 films is abruptly depressed in the same thickness range. These two effects are phenomenologically explained by the presence of a perturbed layer, i.e., a CoSi2 interfacial layer in which the electronic transport properties are dramatically diminished.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98911
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1597-1599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first experimental evidence of a nonlinear optical effect due to intersubband transitions in compositionally asymmetrical multiquantum wells. The effect is detected as an optical rectification signal appearing at the structure terminals when irradiated by a continuous 10.6 μm CO2 laser. The net electro-optical coefficient of the structure is found to be 7.2 nm/V which is more than three orders of magnitude higher than for bulk GaAs. The results are in good agreement with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102248
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of αRh2As on GaAs (001) in a molecular-beam epitaxy system (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 683-687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of αRh2As were grown on top of GaAs (001) in a molecular-beam epitaxy system by codeposition of rhodium and arsenic from separate sources. αRh2As is a good metal with a resistivity equal to 20 μΩ cm, suitable for electronic applications. The holes, the only type of carriers, have a concentration equal to 2.5×1022 cm−3, i.e., a value of the same order of magnitude as that of the best silicides. However, in spite of several features common to αRh2As and GaAs (symmetry, almost equivalent unit-cell constant, and fcc As sublattices), the epitaxial arrangement [100](011)αRh2As//[110](001)GaAs mainly prevails instead of the expected simple unrotated relationship [100](001)αRh2As//[100](001)GaAs. This points out that the achievement of the minimum lattice mismatch is not always the driving force for the epitaxy. In agreement with the ternary phase diagram Rh-Ga-As, the (polycrystalline αRh2As)/GaAs system interacts above 400 °C and leads to the formation of the binary compounds RhGa and RhAs2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341961
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  • 8
    Electronic Resource
    Electronic Resource
    Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 890-895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model which gives a simple interpretation of already published band-structure calculations in transition-metal disilicides (i.e., XSi2, where X stands for Co, Ni, Cr, or W). This approach, based on wave function symmetries, gives physical insight on the insulating, metallic, or semimetallic electronic nature of these silicides. In this theoretical frame, WSi2 is predicted to be a strictly compensated semimetal. Extensive electrical measurements performed on various WSi2 thin films are consistent with this prediction and indicate that the free-carrier density is less than 3×1021 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339695
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Probing of impurity potential well at the Si/SiO2 interface by electric-field-enhanced emission (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2823-2829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transient capacitance method is presented, which enables the study of electric-field-enhanced emission from a continuum of surface states at the Si/SiO2 interface. The enhancement of trap emission is measured in Al-SiO2-Si structures by the variation in the transient capacitance signal detected under a constant applied electric field, the trap emission having been previously activated by application of a higher electric field (excitation bias). The dipolar relaxation contribution to the transient signal observed in these structures is substracted during the experiment. The decrease in the resulting transient signal with the excitation bias clearly reveals the donor nature of the interface traps studied. Since the surface traps are highly localized at the Si-SiO2 interface, the electric field on the impurity is perfectly known. Assuming the sole presence of the Frenkel-Poole effect in our experimental conditions, the barrier lowering is obtained as a function of the applied electric field. From these data, the shape of a portion of the impurity potential well is deduced for different levels in the Si gap, in the direction normal to the Si-SiO2 interface. The results are in good agreement with a coulombic potential barrier at some distance from the impurities (∼10 nm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335218
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature formation of the inversion layer in metal-oxide-semiconductor structures: Theoretical model and application to the determination of minority-capture cross sections of the gold acceptor level in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5920-5929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the formation of the inversion layer in metal-oxide-semiconductor (MOS) capacitors under reverse dc bias as the temperature is scanned from low (100-K) to high (400-K) values. It gives rise to a capacitance step on the capacitance-temperature (C-T) characteristics and to an artifact peak in the deep-level transient spectroscopy (DLTS) spectra. A theoretical simulation of the C-T characteristics, taking into account the generation of minority carriers via deep states in the bulk substrate and via interface states, is in good agreement with the experimental results. We describe accurately the evolution of the inversion charge from an exact determination of the depth limits in the space-charge region between which a single energy level behaves as a generation center. Moreover, we propose a method using C-T measurements, DLTS, and C-T simulations by our model to determine the minority-carrier capture cross section of bulk defects in the semiconductor substrate of the MOS capacitors. We successfully apply this method to determine the hole-capture cross section of the gold acceptor level in n-type silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343617
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