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  • 1
    Electronic Resource
    Electronic Resource
    Effects of thermal annealing on Si-doped GaAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4826-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (∼4 K) photoluminescence has been studied on as-grown and thermally annealed Si-doped GaAs grown by molecular beam epitaxy. The peak intensities of the defect-related emissions, due to the defect-induced bound exciton (d, X) and the defect complex (d) are decreased by thermal annealing. On the other hand, Hall measurements show that free carrier concentrations are decreased only slightly by thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335302
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  • 2
    Electronic Resource
    Electronic Resource
    Phase front measurements of AlGaAs 830 nm phase-locked lasers with a real-refractive-index waveguide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2654-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase-locked laser array with refractive-index waveguides and emitting a low phase-aberration beam is described. A fundamental supermode operation of an evanescent-coupled three-element laser array which emits up to 200 mW in a single diffraction-limited beam is achieved. The full beam angle at the half-power point is 3.2° in the direction of parallel to the p-n junction. This phase aberration is less than λ/14 from 50 to 150 mW. The extremely low phase aberration (0.022λ) is measured at 50 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101025
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 874-877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-μm-thick multilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337328
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    High-power operation of 830-nm AlGaAs laser diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2907-2911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a high-power, semicylindrical-shaped waveguide inner stripe laser diode (SCILD) using a current confinement structure. The structure is optimized for high-power operation without catastrophic optical damage (COD) which limits the maximum available optical power. We confirm that the optical electric field shape in the LD waveguide layer obtained from our analysis coincides with the micrograph of the COD on the device facet. The SCILD is emitted in the fundamental transverse mode up to 190 mW. The full beam angles between the half-power points were 10° and 30° in the directions parallel and perpendicular to the junction plane, respectively. The characteristic temperature of the threshold current was 152 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342737
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  • 5
    Electronic Resource
    Electronic Resource
    Ionized Mg doping in molecular-beam epitaxy of GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1092-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) (approximately-less-than)130 V. For higher Va , the damage can be removed by postgrowth annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336545
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  • 6
    Electronic Resource
    Electronic Resource
    Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1864-1866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/Al0.22Ga0.78As single quantum wells with localized Si doping were grown by molecular beam epitaxy. Low-temperature (1.8, 4.2 K) photoluminescence due to excitons bound to Si donors, which were located at the center of wells, was observed. The binding energies of the exciton are 1.8–1.3 meV for well widths ranging from 7.4–15.4 nm, and substantially agree with the theoretical results obtained by Kleinman [Phys. Rev. B 28, 871 (1983)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336015
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  • 7
    Electronic Resource
    Electronic Resource
    Supermode control and phase front measurements of phase-locked offset-coupled laser arrays with a large optical waveguide structure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1057-1064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-locked array lasers with large optical waveguide structures are demonstrated. The refractive index guides of each laser are evanescently coupled with and without offset-coupling structure. An evanescently coupled three-element laser array without offset coupling regions emits up to 200 mW and an offset-coupled laser array with a 4/5 element emits up to 150 mW under pulsed operation. Both laser arrays emit with all elements in-phase locked and produce a single narrow far-field lobe. The full widths at half maximum of the three-element and 4/5-element laser arrays are 5° and 2.5°, respectively. In phase measurements of the lobe of the 4/5-element laser array, we find that the root-mean-square aberration is less than 0.11λ under pulsed operation. This phase aberration is constant with varying power from 75 to 150 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343492
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  • 8
    Electronic Resource
    Electronic Resource
    Location and nucleotide sequence of the genes for tobacco chloroplast tRNAArg (ACG) and tRNALeu(UAG) (1985)
    Springer
    Current genetics 9 (1985), S. 405-409 
    Details
    ISSN: 1432-0983
    Keywords: Chloroplast ; tRNA gene ; tRNA-like sequence ; Open reading frame
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The location and nucleotide sequence of the genes and flanking regions for tRNAArg(ACG) and tRNALeu(UAG) on tobacco chloroplast DNA have been determined. The gene arrangement is 5S rRNA - 260 bp -tRNAArg - 581 by - tRNAAsn - 5.2 kbp - tRNALeu. The tRNAArg and tRNALeu genes are expressed in the chloroplasts. The opposite strand of the tRNAArg gene contains a tRNAArg-like sequence. The tRNAArg, tRNAAsn and tRNALeu coding regions are contained in open reading frames.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00421612
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Rice chloroplast DNA: a physical map and the location of the genes for the large subunit of ribulose 1,5-bisphosphate carboxylase and the 32 KD photosystem II reaction center protein (1985)
    Springer
    Theoretical and applied genetics 70 (1985), S. 117-122 
    Details
    ISSN: 1432-2242
    Keywords: Rice ; Chloroplast DNA ; Physical map ; Restriction pattern
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary By homogenizing rice leaves in liquid nitrogen, it was possible to isolate intact chloroplasts and, subsequently, pure rice chloroplast DNA from the purified chloroplasts. The DNA was digested by several restriction enzymes and fragments were fractionated by agarose gel electrophoresis. The sum of the fragment sizes generated by the restriction enzymes showed that the total length of the DNA is 130 kb. A circular physical map of fragments, generated by digestion with SalI, PstI, and PvuII, has been constructed. The circular DNA contains two inverted repeats of about 20 kb separated by a large, single copy region of about 75 kb and a short, single copy region of about 15 kb. The location of the gene for the large subunit of ribulose 1,5-bisphosphate carboxylase (Fraction I protein) and the 32 KD photosystem II reaction center gene were determined by using as probes tobacco chloroplast DNAs containing these genes. Rice chloroplast DNA differs from chloroplast DNAs of wheat and corn as well as from dicot chloroplast DNAs by having the 32 KD gene located 20 kb removed from the end of an inverted repeat instead of close to the end, as in other plants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00275309
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