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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2291-2298 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report depth profiles of the hydrogen concentrations in metal-oxide-semiconductor structures measured using the nuclear reaction profiling technique with a 6.4-MeV 15N beam. In both conventionally grown and ultra-dry thermal oxide samples with aluminum or gold gate metal, a peak of hydrogen concentration is observed at the metal/SiO2 interface. The amount of hydrogen at this interface varied from sample to sample in the range 2–6×1015 H/cm2, which was at least 20 times as much as in the SiO2 layers. By continued irradiation with the measuring beam, most of this hydrogen was detrapped from the metal/SiO2 interface and diffused into the SiO2. The detrapping occurred much more rapidly in samples made with Al metallization than in Au gate or unmetallized samples. The data can be fitted by a model in which hydrogen is detrapped from the metal/SiO2 interface by the beam, then diffuses into the SiO2. Redistribution of hydrogen was found to continue until it was uniformly distributed throughout the SiO2, with a residual peak of strongly trapped hydrogen remaining at the metal/SiO2 boundary. At the same time the concentration of hydrogen in the SiO2 increased from an initial low level to about 4×1020 cm−3, depending on the amount of hydrogen initially at the Al/SiO2 interface.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 925-930 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of hole traps in thermal SiO2 films on Si(100) has been characterized as a function of O2 partial pressure in the annealing ambient in order to address the chemistry associated with the hole traps. The annealing treatments were carried out in ultrahigh vacuum (base pressure∼5×10−9 Torr) without and with the presence of an intentional (controlled) partial pressure of O2 in the range 10−6–5×10−2 Torr. Hole trapping was characterized using the avalanche injection technique. Annealing in vacuum results in an increased hole trapping rate similar to that observed for high-temperature (T〉900 °C) furnace annealing in N2. The hole trapping is reduced upon annealing in O2 containing ambients if the O2 partial pressure exceeds the SiO vapor pressure by at least one order of magnitude. Thus, the presence of sufficient O2 in the postoxidation annealing process suppresses hole trapping. These results appear analogous to the reduction in low-field breakdown when O2 is present, as recently reported. In both cases, it is likely that the O2 serves to reoxidize a defect related SiO product which is generated by Si-SiO2 reaction at the interface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4584-4588 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of annealing in vacuum and in controlled low-pressure oxygen ambient on breakdown characteristics of thin (∼500 A(ring)) SiO2 films on Si (100) has been studied under ultrahigh vacuum conditions for temperatures 750–900 °C and controlled O2 partial pressures in the range 10−6–5×10−2 Torr. Dark current-voltage measurements on Al-gate capacitors show that vacuum annealing causes low-field self-healing breakdown by the formation of local defects in the oxide. This degradation of breakdown characteristics is suppressed by the presence of sufficient O2 in the annealing ambient, such that the O2 partial pressure must exceed the SiO equilibrium partial pressure by a factor of ∼100×. This behavior suggests that low-field breakdown is a consequence of oxide decomposition (Si+SiO2→2SiO↑) at defects in the oxide, which is suppressed by reoxidation of the volatile SiO reaction product.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4360-4364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of thin films of poly(butene-1-sulfone), PBS, an electron beam resist, are presented for the range of photon energies from 2.5 to 39.0 eV. The density of these films is found to be (1.39 ± 0.02) g cm−3. A sum-rule calculation is used to demonstrate the overall consistency of the data obtained. The optical data are used to calculate inelastic electron mean-free paths in PBS as a function of incident electron energy from 100 to 10 000 eV.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 1034-1036 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The melting curve of Ar has been measured to 717 K and 60 kbar using a new interferometric technique in a diamond anvil cell. Theoretical calculations are in excellent agreement with the measurements
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 2534-2541 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic spectrum of the amino acid tryptophan has been measured in the environment of a cold, supersonic molecular beam. The resonantly enhanced two-photon ionization spectrum of tryptophan shows some features characteristic of more volatile indole derivitives, however the region of the spectrum near the origin shows distinctive low frequency structure absent from the simpler indole containing molecules. The power dependence of the spectrum reveals features which can be attributed to several conformers of tryptophan in the molecular beam. One of these conformers shows a nearly harmonic 26 cm−1 vibrational progression which does not appear in the spectra of other indole derivitives, and the intensity pattern of this progression indicates that this particular conformer undergoes a significant geometry change upon electronic excitation. The lack of many extensive vibrational progressions in the electronic spectrum indicates that the excited state conformers of tryptophan are similar to those in the ground electronic state. The identification of a small number of stable tryptophan conformers is important for understanding the photophysics of tryptophan in solution.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4819-4820 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 6539-6549 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic spectroscopy of four different tryptophan analogs, 3-indole acetic acid, 3-indole propionic acid, tryptamine, and N-acetyltryptophan ethyl ester (NATE) has been studied in a supersonic molecular beam using laser-induced fluorescence and resonantly enhanced two-photon ionization. The electronic transition to the lowest excited singlet state occurs at 35 039, 34 965, 34 918, and 34 881±2 cm−1 for 3-indole acetic acid, 3-propionic acid, tryptamine, and NATE, respectively. The relatively small differences in the electronic origin transition frequencies suggests that the lowest excited singlet state for all of these moelcules is the 1Lb state. The spectra reveal that each of these molecules have stable conformers in the gas phase, analogous to our previously reported studies of tryptophan. A low frequency vibrational mode has been observed in 3-indole propionic acid, tryptamine, NATE, and tryptophan which involves motion of the side chain against the indole ring. We have observed that forming a van der Waals complex between tryptamine and a single methanol molecule causes the spectral features due to different conformers of the free molecule to collapse to a single line, suggesting that one particular conformer becomes the most stable species. This emphasizes the importance of including solvent interactions in any attempt to model the behavior of these molecules in solution.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 3059-3078 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quotidian equation of state (QEOS) is a general-purpose equation of state model for use in hydrodynamic simulation of high-pressure phenomena. Electronic properties are obtained from a modified Thomas–Fermi statistical model, while ion thermal motion is described by a multiphase equation of state combining Debye, Grüneisen, Lindemann, and fluid-scaling laws. The theory gives smooth and usable predictions for ionization state, pressure, energy, entropy, and Helmholtz free energy. When necessary, the results may be modified by a temperature-dependent pressure multiplier which greatly extends the class of materials that can be treated with reasonable accuracy. In this paper a comprehensive evaluation of the resulting thermodynamic data is given including comparison with other theories and shock-wave data.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 743-751 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new type of electrostatic charged particle analyzer based on toroidal geometry. The analyzer features a 360°×10° (polar×azimuthal) field of view and a focal length in the polar direction significantly longer than that of similar devices based on spherical geometry. Extended focal length is a requirement for matching the electrostatic energy spectrometer with a second, mass-resolving, analyzer. Laboratory tests show that the toroid design has a large geometric factor per unit of instrument weight, good energy-angle resolution in the particle deflection plane, and sharp (1.0° FWHM) resolution at focus in the polar angle direction. The analyzer is well suited for use in satellite-borne mass spectrometry and also as a stand-alone electrostatic analyzer.
    Type of Medium: Electronic Resource
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