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  • 1
    Electronic Resource
    Electronic Resource
    Ethylenediamine (1952)
    s.l. : American Chemical Society
    Analytical chemistry 24 (1952), S. 2000-2001 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60072a040
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  • 2
    Electronic Resource
    Electronic Resource
    Desalting Amino Acid Solutions by Displacement with Piperidine (1957)
    s.l. : American Chemical Society
    Analytical chemistry 29 (1957), S. 1877-1878 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60132a012
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of absolute thermoelectric power by photoemission (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3114-3115 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is pointed out that a determination of the temperature dependence of the Fermi cutoff in the conduction band of a metal provides a means of measuring the thermal emf of a single metal, as well as the absolute thermoelectric power, without use of a reference substance. The energy of the Fermi cutoff is determined by photoemission. The method is illustrated by a crude determination of the thermal emfs of copper and constantan.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142115
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  • 4
    Electronic Resource
    Electronic Resource
    THE PROPAGATION OF ATTENUATED SH CHANNEL WAVES (1978)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 26 (1978), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: The problem of detecting discontinuities which interrupt coal seams is of great importance to the coal mining industry. One possible method of detecting such discontinuities is that of in-seam seismology where both source and detectors are placed under- ground on the coal face. In this paper the propagation of SH waves from a line source in the seam is investigated. There exists a particular set of waves–channel waves–, confined to the coal seam. These waves are dispersive and have an associated Airy phase whose geometrical attenuation is least. However, if absorption of energy within the coal is included then the Airy phase is the dominant wavegroup only for distances less than a certain maximum. If a detection criterion proposed by Dresen and Freystätter applies, then there is a lower limit to the frequency that should be used for exploration. This requirement may be in conflict with attenuation considerations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1978.tb01575.x
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  • 5
    Electronic Resource
    Electronic Resource
    COMMENT ON “THE RADIATION OF ACOUSTIC WAVES FROM AN AIR-GUN” (1977)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 25 (1977), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1977.tb01189.x
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  • 6
    Electronic Resource
    Electronic Resource
    Anode hole injection and trapping in silicon dioxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 304-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in the oxide conduction band and where the average electric field in the oxide exceeds 5 MV/cm (thick-film limit) or the voltage drop across the oxide layer is at least 8 V (thin-film limit). The hole generation is directly shown to be related to the appearance of hot electrons with kinetic energies greater than 5 eV in the oxide conduction band near the anode region. Monte Carlo simulations confirm that the electron energy distribution at the anode is the controlling variable and that hot hole injection occurs mostly over the anode/oxide energy barrier. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362821
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  • 7
    Electronic Resource
    Electronic Resource
    Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1818-1823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler–Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 °C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360762
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  • 8
    Electronic Resource
    Electronic Resource
    Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3595-3608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with 15N nuclear reaction analysis and electrical methods. Internal photoemission and Fowler–Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (∼1015 atoms/cm2) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, ∼1014 cm−2, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at ∼1 MV/cm, consistent with the threshold for electron heating in SiO2. In the "wet'' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the "dry'' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357420
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  • 9
    Electronic Resource
    Electronic Resource
    Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2032-2040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapped holes are shown to induce "slow'' interface states by their presence that are distinctly different from other types of interface states. These slow states can be alternately introduced and removed by sequential hole generation and annihilation. Various experiments and techniques are used to rule out explanations involving artifacts due to lateral nonuniformities in the hole trapping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359575
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  • 10
    Electronic Resource
    Electronic Resource
    Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer (approximately-equal-to)20 A(ring) thick epitaxially crystallizes on GaAs after annealing at (approximately-equal-to)570 °C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n- and p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104820
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