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  • 1
    Electronic Resource
    Electronic Resource
    Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3595-3608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with 15N nuclear reaction analysis and electrical methods. Internal photoemission and Fowler–Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (∼1015 atoms/cm2) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, ∼1014 cm−2, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at ∼1 MV/cm, consistent with the threshold for electron heating in SiO2. In the "wet'' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the "dry'' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357420
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  • 2
    Electronic Resource
    Electronic Resource
    Moderate-temperature anneal of 7-nm thermal SiO2 in O2- and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1510-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A silicide anneal furnace, nominally oxygen and water free, has been used to anneal in the temperature range between 500 and 800 °C, in Ar or N2, silicon/oxide structures having a dielectric layer (thermal SiO2) about 7 nm thick. Quasistatic current-voltage measurements have pointed out a dramatic increase of the interface traps after just a few minutes anneal at T=700 °C. To prove that such an increase on interface-trap concentration could be correlated to a very low oxygen and/or water content inside the anneal chamber, the same oxide films have been annealed, before metal deposition, under ultrahigh vacuum (UHV)(10−8 Torr) in the same temperature range and for the same time intervals. Electron paramagnetic resonance (EPR) analysis has shown an increase of the Pb(111) and Pb1(100) defect centers, leaving unchanged the density of Pb0(100) defect centers. Experimental data on annealing efficiency and the strong similarity observed between results after anneals performed in the silicide anneal furnace and under UHV lend support to the idea that the cause of the Si-SiO2 interface degradation may be the Pb center reverse-passivation reaction. Also, EPR analysis has provided evidence of a different annihilation behavior of the Pb(111) and Pb0(100) centers. Finally, the comparison between the time-zero breakdown distribution after anneal in a silicide anneal furnace and under UHV has shown that (i) the Si-SiO2 interface degradation is not a precursor step of a more complex reaction process leading to the loss of the oxide integrity; (ii) for a thin oxide layer (in our case less than 10 nm), the electrical activation of macroscopic defects during anneal under vacuum happens at temperature much lower than previously reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349564
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  • 3
    Electronic Resource
    Electronic Resource
    Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2317-2323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process to deposit in situ a dual electron injector structure (DEIS) with 5-nm SiO2 between two Si-rich SiO2 (SRO) layers of ∼20 nm each has been developed. The excess silicon, as evaluated by Auger spectroscopy and Rutherford backscattering, was of the order of 15%–17%, in agreement with previously reported values under similar deposition conditions. Thin cross-sectioned samples of DEIS structures, both as-deposited and annealed at 1000 °C with Ar in an oxygen and water-moisture-free atmosphere, were examined by spatially resolved energy-loss spectroscopy (EELS) in a scanning transmission electron microscope. The analysis has shown that the excess silicon is present either as nanometer-sized silicon islands or as submicroscopic silicon oxides of varying stoichiometry resulting from intermediate oxidation states (i.e., Si+3, Si+2, and Si+1). Additionally, the thermal anneal at 1000 °C did not appear to have any effect on silicon island size of the SRO layer in contact with the silicon substrate. This suggests that the driving force of silicon clustering might not be diffusion limited, but could be related to the conditions under which the anneal was performed (in our case, in oxygen and water-moisture-free atmosphere). From the EELS analysis, the annealing procedure caused the loss of ≈30% of Si and O atoms from the top SRO layer, which could have contributed to the observed degradation of the electrical properties of the annealed DEIS structure. Ramped current tests performed by injecting electrons either from the gate or from the substrate, demonstrate extremely high breakdown voltages (VBD). The thermal anneal at 1000 °C, performed under a very low oxygen and water partial pressure, lowered the SRO film conductivity. Also, for either the annealed or as-deposited structures, a reduced injection asymmetry has been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348713
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  • 4
    Electronic Resource
    Electronic Resource
    Fundamental chemical differences among Pb defects on (111) and (100) silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1641-1643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using electron spin resonance, a single defect (called Pb0) is observed at the Si(111)/SiO2 interface, whereas two different defects (called Pb0 and Pb1) are observed at the Si(100)/SiO2 interface. While the structure of the Pb center is well established as a silicon dangling bond, the identities of Pb0 and Pb1 are controversial. We have discovered that under processing conditions where the hydrogen passivation reaction Si⋅+H0→Si-H passivates the Pb center at the Si(111)/SiO2 interface, the Pb1 center is likewise passivated but the Pb0 center is not. We conclude that the structure of Pb1 is a silicon dangling bond similar to the Pb on (111), and that the Pb0 is a fundamentally different defect, in agreement with recent theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105244
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  • 5
    Electronic Resource
    Electronic Resource
    MORPHOMETRY, HEMATOLOGY, AND SERUM CHEMISTRY IN THE HAWAIIAN MONK SEAL (MONACHUS SCHAUINSLANDI) (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Marine mammal science 20 (2004), S. 0 
    Details
    ISSN: 1748-7692
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: We studied morphometric, hematology, and serum chemistry variables in 140 Hawaiian monk seals (Monachus schauinslandi) to establish normal baseline values for these variables among free-living seals. We compared seals at French Frigate Shoals (FFS), Midway Atoll (MID), and Pearl and Hermes Reef (PHR) because these subpopulations differ in their rates of population recovery. Dorsal standard length and axillary girth differed significantly between immature (1–4 yr old) and adult (≥5 yr old) seals among sex and island subgroups. Immature seals at FFS were shorter than those at MID and PHR; adult seals at FFS had smaller dorsal standard lengths and axillary girths compared to the other subpopulations. The differences in size were more pronounced among adult females. Significant differences were also found for hematology and serum chemistry variables among seals at FFS, MID, and PHR. Monk seals at FFS had an absolute lymphopenia and eosinopenia compared to those at MID and PHR, compatible with a stress response. Seals at FFS also had lower blood urea nitrogen than seals at PHR, and a lower plasma potassium than seals at MID or PHR. Monk seals had an absolute and relative eosinophilia compared to previously published values. Analysis of subpopulation differences is useful for population health assessment and for long-term monitoring of an endangered species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1748-7692.2004.tb01196.x
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical properties of thin SiO"2 films nitrided in N"2O by rapid thermal processing
    Amsterdam : Elsevier
    Microelectronic Engineering 19 (1992), S. 657-660 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(92)90516-T
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  • 7
    Electronic Resource
    Electronic Resource
    Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
    Amsterdam : Elsevier
    Thin Solid Films 193-194 (1990), S. 501-510 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0040-6090(05)80060-4
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  • 8
    Electronic Resource
    Electronic Resource
    A Smart Sensor System for Carbon Monoxide Detection (1997)
    Springer
    Analog integrated circuits and signal processing 14 (1997), S. 275-296 
    Details
    ISSN: 1573-1979
    Keywords: sensors ; sensor interfaces ; sigma-delta converters
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper illustrates a smart sensor system for carbonmonoxide detection. An innovative technological approach hasbeen pursued to fabricate gas sensors on silicon substrate, compatiblewith IC fabrication. A mixed analog-digital electronic interfaceprocesses the outputs of three sensors to compensate relativehumidity and interfering gases. Sigma-delta signal processingand low-frequency noise reduction techniques are used to minimizesilicon area and to meet the required performance in a standardCMOS technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008250204824
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal Characterisation of Porous Silicon Membranes (2000)
    Springer
    Journal of porous materials 7 (2000), S. 183-186 
    Details
    ISSN: 1573-4854
    Keywords: macroporous silicon ; thermal conductivity ; sensors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Results of thermal characterisation based on the phase lag of photoacoustic signal for front-rear surface illumination of porous silicon and nitrided porous silicon membranes for gas sensing devices are presented. Thermal conductivity values in good agreement with literature values have been obtained, confirming the usefulness and reliability of photothermal methods in the investigation of new materials for sensors and microsystems. Preliminary results of stokes-antistokes Raman investigations are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009630619528
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  • 10
    Electronic Resource
    Electronic Resource
    Permeated Porous Silicon Suspended Membrane as Sub-ppm Benzene Sensor for Air Quality Monitoring (2000)
    Springer
    Journal of porous materials 7 (2000), S. 197-200 
    Details
    ISSN: 1573-4854
    Keywords: silicon ; macroporous ; membrane ; sensor ; benzene
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract To realise advanced microsensors for a reliable monitoring of very low concentrations of pollutant species such as NOx, SO2, CO, O3 and aromatic hydrocarbons, the use of porous silicon (PS) permeated with semiconducting oxides has been explored. To reduce the power consumption and to make feasible the device to operate in a fast pulsed temperature mode, a novel sensor architecture has been designed. The main feature of the device is represented by a permeated suspended macroporous Si membrane, few tens of microns thick. In this paper the porous silicon formation through a suspended silicon membrane and the morphological characterization of the PS layer are reported. Moreover, the performance of a C6H6 gas sensor based on the suspended macroporous Si membrane (≅30 μm thick), permeated with the chemical precursor of Sn oxide is presented. The results have demonstrated the feasibility to realize a macroporous silicon suspended membrane with high specific surface area, efficient electrical insulation and negligible warpage. Furthermore, the permeation of the oxidized macroporous silicon membrane with SnO2 has been proved to be a valuable approach to fabricate gas sensors suitable to detect aromatic hydrocarbons in a sub-ppm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009638821345
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