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  • Inorganic Chemistry  (22)
  • 71.55  (3)
  • Analytical Chemistry and Spectroscopy  (3)
  • 41  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 19 (1979), S. 307-312 
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 85.70 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A model for the description of saturation buildup curves on single-capture elements is presented. It avoids the principal difficulties connected with the so-called SEB model in the case of the transverse HGMS-geometry. The basic idea of this model consists of the “linking” of the normal and tangential components of the forces acting at the buildup surface by a force of static friction. In contrast to the SEB-model the fact that the saturation buildup surface is neither circular nor concentric with the cross section of the capture element is taken into account. After evaluating two sets of experimental data and calculating the coefficient of static frictionf the “model of static friction” is submitted to a first examination. Within the accuracy of these preliminary measurements and even with an approximate evaluation of the fluid drag force the usefulness of the proposed method is established.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 18 (1979), S. 427-429 
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 42 (1987), S. 117-124 
    ISSN: 1432-0630
    Keywords: 85.70 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental investigation of particle accumulation on a single wire in the transverse HGMS configuration is presented. For saturation buildup we obtain a monotonic decrease of the coefficient of static frictionf sat with the flow velocityv a on the basis of the “friction model”. The power law of the dependence of the saturation accumulation area onv a , predicted by this model, is experimentally verified. Furthermore, we present an empirical law describing the dependence of the accumulation area on timeτ and on flow velocityv a for the entire buildup process. From the investigation of the initial accumulation we conclude that existing theories of the so-called capture radius do not satisfactorily describe the situation near the end of a capture wire.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 379-381 
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 0009-2940
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Hochalkylierte Cyclohexane. - Röntgenstrukturanalyse, Kraftfeld-Berechnungen und Konformationen von cis/trans-1,4-disubstituierten Cyclohexan-IsomerenDie Struktur von mesyliertem cis- und trans-Tetramethylshisool cis-2 und trans-2 wurde durch Einkristall-Röntgenmethoden aufgeklärt. In cis-2 nimmt die Isopropenylgruppe im Kristall eine axiale Stellung ein, und die erhaltenen Strukturdaten stehen in gutem Einklang mit Kraftfeldberechungen. In trans-2 wurden zwei Rotamere, die durch Rotation der Isopropenylgruppe entstehen, durch NOE-Messungen zugeordnet. Der Vergleich der spektroskopischen Daten mit denen anderer Tetramethyllimonenderivate zeigt, daß diese in Verbindungen mit bevorzugt äquatorialer und bevorzugt axialer Lage der Isopropenylgruppe eingeordnet werden können.
    Notes: The structures of mesylated cis- and trans-tetramethylshisool cis- 2 and trans-2 have been elucidated by single-crystal X-ray techniques. In cis-2 the isopropenyl group adopts an axial position in the crystal, and the structural data obtained are in good agreement with those from force-field calculations. In trans-2 the two rotamers arising from rotation of the isopropenyl group were assigned by NOE measurements. Comparison of the spectroscopic data with those of other tetramethyllimonene derivatives showed that these can be classified into compounds with preferred equatorial and preferred axial position of the isopropenyl group.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 124 (1991), S. 2147-2147 
    ISSN: 0009-2940
    Keywords: Tricyclo[3.3.0.03,7]octanes ; Samarium iodide ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: 1,5-Dimethylbicyclo[3.3.0]octan-3,7-dione (2) was converted into 1,5-dihydroxy-3,7-dimethyltricyclo[3.3.0.03,7]octane (3) in the presence of Sml2 in 76% yield.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 115 (1982), S. 3880-3885 
    ISSN: 0009-2940
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Synthesen von α,β-ungesättigten und anderen reaktiven AcylcyanidenReaktive aliphatische Acylcyanide (1-10, siehe Tab. 1) werden aus Acylchloriden, Natriumiodid und Kupfer(I)-cyanid unter verschiedenen Bedingungen dargestellt. Die Reaktion verläuft über die Acyliodide.
    Additional Material: 3 Tab.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 117 (1984), S. 3325-3329 
    ISSN: 0009-2940
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: 2,2,4,4-Tetramethyl-3-methylenbicyclo[3.2.1]oct-6-enDie sterisch anspruchsvolle Titelverbindung 1 wurde in einer Eintopfreaktion aus Cyclopentadien und 2,4-Dimethyl-3-[(trimethylsilyl)methyl]-3-penten-2-ol (5) in Gegenwart von Titantetrachlorid/N-Methylanilin hergestellt. 2,2,4,4-Tetramethylbicyclo[3.2.1]oct-6-en-3-on (4) wurde vereinfacht im 15-g-Maßstab dargestellt.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 115 (1982), S. 1256-1258 
    ISSN: 0009-2940
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Eine neue Darstellung von Dehydrocamphenilon und CamphenilonBenzilsäureumlagerung von Dehydrocarbocamphenilon (4) ergibt die α-Hydroxysäure 5, welche mit Bleitetraacetat oxidativ zu Dehydrocamphenilon (2) decarboxyliert wird. Die gleiche Reaktionsfolge führt von Carbocamphenilon (9) zu Camphenilon (3).
    Type of Medium: Electronic Resource
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