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  • 1
    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 1 (1993), S. 61-75 
    ISSN: 1573-2746
    Keywords: Metal/ceramic interface ; internal oxidation ; Cu/MgO heterophase interface ; high resolution electron microscopy ; atom-probe field-ion microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The chemical composition profile across a Cu/MgO {111}-type heterophase interface, produced by the internal oxidation of a Cu(Mg) single-phase alloy at 1173 K, is measured via atom-probe field-ion microscopy with a spatial resolution of 0.121 nm; this resolution is equal to the interplanar spacing of the {222} MgO planes. In particular, we demonstrate directly that the bonding across a Cu/MgO {111}-type heterophase interface, along a 〈111〉 direction common to both the Cu matrix and an MgO precipitate, has the sequence Cu|O|Mg... and not Cu|Mg|O...; this result is achieved without any deconvolution of the experimental data. Before determining this chemical sequence, it was established, via high-resolution electron microscopy, that the morphology of an MgO precipitate in a Cu matrix is an octahedron faceted on {111} planes with a cube-on-cube relationship between a precipitate and the matrix; that is, {111}Cu//{222}MgO and 〈110〉Cu // 〈110〉MgO.
    Type of Medium: Electronic Resource
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