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  • 1
    Electronic Resource
    Electronic Resource
    Automatic temperature-controlled helium-vapor cryostat for atom-probe field-ion microscopy studies (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3774-3776 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An automatic temperature control mechanism was fabricated from readily available components and installed on an existing continuous flow helium-vapor cryostat as part of an atom-probe field-ion microscope. This control system eliminates tedious manual adjustment of the vapor flow rate. It is shown that the time needed to cool the cryostat from room temperature to a cryogenic temperature is reduced from 3 to 1 h. Within the 40–80 K range changes in the setpoint temperature are accommodated within 10 min. The temperature stability is better than 0.1 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145436
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  • 2
    Electronic Resource
    Electronic Resource
    Time aberrations of uniform fields: An improved reflectron mass spectrometer for an atom-probe field-ion microscope (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3126-3131 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The mass resolution of the atom-probe field-ion microscope is limited by the time resolution of the ion-separating spectrometer. Time aberrations of uniform fields are investigated in general in order to characterize the optimal performance of high-transmission, high-mass resolution, multistage reflectron lenses. Correction of higher order time aberrations greatly improves the mass resolution. For an ion beam with an energy distributed uniformly about some nominal energy, E0±dE, mass resolutions (base width) of m/dm=848, 1344, 2151, 3571 can be achieved for single-, double-, triple- and quadruple-stage reflectron mass spectrometers when dE=0.1E0. A unique design example employing both second- and third-order time correction is given for an atom-probe field-ion microscope.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144319
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  • 3
    Electronic Resource
    Electronic Resource
    Systematic procedures for atom-probe field-ion microscopy studies of grain boundary segregation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4071-4079 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A procedure is presented for systematically and reproducibly preparing alloy specimens for the study of grain boundary (GB) segregation employing both transmission electron (TEM) and atom-probe field-ion microscopies (APFIM) to examine the same GB; the procedure is illustrated for an Fe(Si) alloy. A commercially available oxygen plasma source is incorporated in the sample preparation procedure to remove all traces of hydrocarbon build-up introduced during TEM GB analysis, thus allowing controlled backpolishing after a TEM analysis. Specifications for the optimum tip geometry, i.e., how a GB is positioned in a tip via backpolishing to maximize the probability of its observation and subsequent compositional analysis via APFIM, are empirically determined: 30–200 nm for the GB-to-tip separation, and 40–80 nm for the GB diam for shank angles less than 20°. It is demonstrated that accurate quantitative APFIM analyses of an Fe-3 at. % Si alloy are possible for pulse fractions ≥15% and specimen temperatures ≤55 K. Results are presented for a Σ≈3a GB that was first analyzed via TEM to determine its five macroscopic degrees of freedom, and then analyzed via APFIM to measure an average GB segregation enhancement factor for Si of 3.51±0.34 at 823 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143214
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  • 4
    Electronic Resource
    Electronic Resource
    Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1922-1924 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip ex- change capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146997
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  • 5
    Electronic Resource
    Electronic Resource
    New time-of-flight electronics for atom-probe field-ion microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1973-1977 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present new time-of-flight electronics for atom-probe field-ion microscopy that is based on the LeCroy 2277/EXP2 time-to-digital converter (TDC) and is significantly superior to the commonly used LeCroy 4208 TDC. The maximum number of ions detected for each cycle is increased, the electronics dead time is decreased, and the pulse width from the Phillips Scientific 6904 discriminator is measured. The LeCroy 2277/EXP2 TDC records up to 128 ions per field evaporation pulse as opposed to a maximum of eight ions for a single LeCroy 4208 TDC. The dead time is reduced by increasing the pulse pair resolution, in the multihit mode of the TDC, from 7.3 to 3.3 ns. The LeCroy 2277/EXP2 TDC has both leading and trailing edge detection capability, allowing us to measure the pulse width generated by the Phillips Scientific 6904 discriminator. Combining the pulse width measurement capability with the updating capability of the Phillips Scientific 6904 discriminator, in which the discriminator extends the output pulse width by the time difference between two closely spaced (〈2 ns) pulses, we resolve two ions arriving within 2 ns of each other. With these improvements, we find that 66% of the total number of multiply field-evaporated ions arriving with a pulse separation of up to 8 ns are incorrectly counted as a single ion. The percentage of multiply field-evaporated ions occurring with a pulse separation of 2 ns is 6%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144798
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  • 6
    Electronic Resource
    Electronic Resource
    A system for systematically preparing atom-probe field-ion-microscope specimens for the study of internal interfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3390-3398 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile system has been designed and fabricated to prepare atom-probe field-ion-microscope (APFIM) specimens in a systematic manner, such that internal interfaces can be positioned in the tips of these wire specimens for subsequent analysis of their chemical composition. This system incorporates both beaker electrolytic and zone electrolytic cell configurations, a specially constructed power supply, and a special transmission electron microscope holder for wires. The power supply enables ac electroetching or dc electropolishing in the automated or manual modes. The ac wave forms available are sine (0.002 Hz–200 kHz) or square (10 Hz–20 kHz). Triggering and gating are performed manually or with a pulse generator. The dc output is gated manually to produce a continuous output or with a pulse generator to produce single pulses with widths in the range 50 μs–1 s. A counter indicates the number of periods of voltage applied, and the total charge transferred in the electrolytic cell is integrated in the range 10 μA s–1 kA s. The power supply provides 0 to ±48 V peak at 1 A peak. A double-tilt stage for an Hitachi H-700H 200 kV transmission electron microscope (TEM) was radically modified to hold APFIM specimens; this stage is vibrationless at 310 000× magnification. It has a tilting range of ±30° and ±27° for the x and y tilts, respectively. Examples are given of the controlled backpolishing of W-3 at. % Re, W-25 at. % Re, Mo-5.4 at. % Re, and Fe-3 at. % Si specimens, and their observation by TEM, to selectively place grain boundaries in the tip region. The analysis of the chemical composition of a grain boundary, which is first located in a W-25 at. % Re specimen via TEM, by the APFIM technique is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141590
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  • 7
    Electronic Resource
    Electronic Resource
    A miniature electron-beam evaporator for an ultrahigh-vacuum atom-probe field-ion microscope (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3745-3749 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A miniature electron-beam evaporator (MEBE) has been fabricated and adapted to our ultrahigh-vacuum atom-probe field-ion microscope (APFIM). The MEBE allows for in situ vapor deposition−under ultrahigh-vacuum conditions ( 〈 4 × 10−10 Torr)−of a wide range of elements, on the surface of an atomically clean FIM specimen; the surface is prepared via the field-evaporation process. The deposition rate of an evaporant from the MEBE is calibrated to give an accurate value of this quantity. Examples of the deposition−at ≈0.3 nm min−1− of silicon or titanium on tungsten FIM specimens are presented. And in the case of a Ti/W couple it is demonstrated that an interface between a tungsten substrate and a titanium overlayer is chemically sharp on an atomic scale; the titanium was vapor deposited at a substrate temperature of 77 K. Also a 20-kV electron-beam gun was adapted to our APFIM. This gun is useful for in situ electron-beam heating of bilayer couples, or the introduction of point defects in metal oxide or semiconductor overlayers via electronic mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141547
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  • 8
    Electronic Resource
    Electronic Resource
    The chemical composition of a metal/ceramic interface on an atomic scale: The Cu/MgO {111} interface (1993)
    Springer
    Interface science 1 (1993), S. 61-75 
    Details
    ISSN: 1573-2746
    Keywords: Metal/ceramic interface ; internal oxidation ; Cu/MgO heterophase interface ; high resolution electron microscopy ; atom-probe field-ion microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The chemical composition profile across a Cu/MgO {111}-type heterophase interface, produced by the internal oxidation of a Cu(Mg) single-phase alloy at 1173 K, is measured via atom-probe field-ion microscopy with a spatial resolution of 0.121 nm; this resolution is equal to the interplanar spacing of the {222} MgO planes. In particular, we demonstrate directly that the bonding across a Cu/MgO {111}-type heterophase interface, along a 〈111〉 direction common to both the Cu matrix and an MgO precipitate, has the sequence Cu|O|Mg... and not Cu|Mg|O...; this result is achieved without any deconvolution of the experimental data. Before determining this chemical sequence, it was established, via high-resolution electron microscopy, that the morphology of an MgO precipitate in a Cu matrix is an octahedron faceted on {111} planes with a cube-on-cube relationship between a precipitate and the matrix; that is, {111}Cu//{222}MgO and 〈110〉Cu // 〈110〉MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00203266
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  • 9
    Electronic Resource
    Electronic Resource
    Solute-atom segregation at symmetric twist and tilt boundaries in binary metallic alloys on an atomic-scale (1997)
    Springer
    Interface science 4 (1997), S. 65-80 
    Details
    ISSN: 1573-2746
    Keywords: grain boundaries ; solute-atom segregation ; metropolis Monte Carlo and overlapping distributions Monte Carlo simulations ; single-phase copper-nickel ; gold-platinum ; nickel-palladium ; and nickel-platinum alloys
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Monte Carlo and overlapping distributions Monte Carlo (ODMC) techniques are employed to simulate grain boundary (GB) segregation in a number of single-phase binary metallic alloys—the Au-Pt, Cu-Ni, Ni-Pd, and Ni-Pt systems. For a series of symmetric [001] twist and [001] tilt boundaries, with coincident site lattice (CSL) structures, we demonstrate that the Gibbsian interfacial excess of solute is a systematic function of the misorientation angle. We also explore in detail whether the GB solid solution behavior is ideal or nonideal by comparing the results of Monte Carlo and ODMC simulations. The range of binding free energies of specific atomic sites at GBs for solute atoms is also studied. The simulational results obtained demonstrate that the thermodynamic and statistical thermodynamic models commonly used to explain GB segregation are too simple to account for the microscopic segregation patterns observed, and that it is extremely difficult. If not impossible, to extract the observed microscopic information employing macroscopic models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00200839
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  • 10
    Electronic Resource
    Electronic Resource
    The growth and characterization of high quality UPt3 crystals (1995)
    Springer
    Journal of low temperature physics 101 (1995), S. 623-628 
    Details
    ISSN: 1573-7357
    Keywords: 74.70.T ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Single crystals of UPt3 have been prepared. The crystals are shown to have a superconducting transition temperature of 526±2 mK with a transition width of 12.6 ± 0.1 mK. The measured x-ray rocking curve FWHM of the (002) peak is 180 ± 5 arcseconds, compared to a theoretical minimum linewidth as predicted for a perfect UPt3 single crystal of 90 arcseconds. The x-ray characterization, susceptibility, residual resistivity ratio (RRR) and impurity concentration results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753364
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