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Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth (1987)

Devine, R. L. S. ; Foxon, C. T. ; Joyce, B. A. ; [weitere]

Springer

Applied physics 44 (1987), S. 195-200

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Details

ISSN: 1432-0630

Schlagwort(e): 66.30j ; 61.70w ; 68.48

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a “kick-out” reaction which leads to the observed disordering of the superlattices.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00626423

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