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  • 1
    Electronic Resource
    Electronic Resource
    Defects and leakage currents in BF2-implanted preamorphized silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3567-3575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose silicon implants have been used to preamorphize the surface of single-crystal silicon prior to the implantation of low-energy BF2. The preamorphization results in shallow junction formation with minimal channeling of the boron, but high concentrations of electrically active defects are formed, leading to excessive reverse bias leakage currents. Measurements of leakage current and deep-level defects indicated that two distinct types of electrically active defects were important: those associated with what are probably complexes or clusters of point defects located near the far end of the range of the implanted silicon, and those associated with extended defects (loops) at the edge of the regrown amorphous region. The former defects were deep-level donors present in high concentrations (〉1017 cm−3) after regrowth of the amorphous layer at 600 or 700 °C and resulted in leakage currents 〉10−4 A/cm2. These centers could be annealed out at 800 °C reducing the leakage current to values between 5×10−8 and 2×10−5 A/cm2 depending upon the relative locations of the extended defects and the metallurgical junction. Measurements and modeling have shown that the location of the band of extended defects is critical in controlling the leakage current and that it will need to be a few hundred angstroms shallower than the junction itself for the associated generation current to be fully suppressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337613
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of melt depth in laser crystallized poly-Si thin film transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4086-4094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of film thickness and incident excimer laser energy density on the properties of poly-Si thin film transistors has been investigated and a coherent pattern of behavior has been identified which establishes controlled melt-through of the film as a key condition for achieving high quality devices. The conditions were correlated with the appearance of large grains and gave consistent results from both n- and p-channel devices, with carrier mobilities of more than 150 and 80 cm2/V s, respectively, and leakage currents of less than 2×10−14 A/μm. From a study of static irradiations, using a semi-Gaussian laser beam, the results are shown to be consistent with the super lateral grain growth (SLG) model. The trailing edge of the beam, when used in a swept mode, has been demonstrated to play an important role in extending the size of the energy window for this effect by re-setting the material into the SLG regime. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365719
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  • 3
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 4
    Electronic Resource
    Electronic Resource
    Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth (1987)
    Springer
    Applied physics 44 (1987), S. 195-200 
    Details
    ISSN: 1432-0630
    Keywords: 66.30j ; 61.70w ; 68.48
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a “kick-out” reaction which leads to the observed disordering of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626423
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  • 5
    Electronic Resource
    Electronic Resource
    TEM image contrast from clustering in Ga-In containing III–V alloys (1983)
    Springer
    Applied physics 31 (1983), S. 23-27 
    Details
    ISSN: 1432-0630
    Keywords: 81.30 ; 61.10 ; 64
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fine grainy contrast observed in TEM images of the Ga-In containing III–V alloys GaInP, GaInAs, and GaInAsP is interpreted as direct evidence of alloy clustering. A simple model is proposed in which clustering modulates the average lattice spacing throughout the crystal. For a sinusoidal modulation, solutions of the coupled two-beam dynamical diffraction equations in the column approximation show large intensity fluctuations when the modulation wavelength is comparable to the extinction distance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617184
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  • 6
    Electronic Resource
    Electronic Resource
    Silicon migration during MBE growth of doped (A1, Ga)As films (1986)
    Springer
    Applied physics 41 (1986), S. 237-241 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 66.30J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616845
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation effects during MBE growth of Sn-Doped GaAs (1982)
    Springer
    Applied physics 28 (1982), S. 63-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617784
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