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  • 1
    Electronic Resource
    Electronic Resource
    Formation of Complex Fluoroborate Anions (1966)
    s.l. : American Chemical Society
    Inorganic chemistry 5 (1966), S. 1627-1629 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50043a041
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  • 2
    Electronic Resource
    Electronic Resource
    The Chemistry of Borazene. I. The Reaction of B-Trichloro-N-trimethylborazene with Grignard Reagents1 (1958)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 4515-4517 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01550a020
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  • 3
    Electronic Resource
    Electronic Resource
    Fused-ring Borazines (1962)
    s.l. : American Chemical Society
    The @journal of organic chemistry 27 (1962), S. 3848-3851 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01058a021
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  • 4
    Electronic Resource
    Electronic Resource
    Slope resistance characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 305-307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the incremental slope resistance of a GaAs-(Al,Ga)As-GaAs single barrier structure have been made at temperatures between 70 and 230 K. In contrast with other work we deliberately concentrate on the region close to zero applied bias. The deficiencies in the often-used Wentzel–Kramers–Brillouin analysis of the electrical characteristics are exposed in this regime, and an exact, Airy function approach is found to be essential to describe our observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99501
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  • 5
    Electronic Resource
    Electronic Resource
    The lattice locations of silicon atoms in delta-doped layers in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 633-639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used secondary ion mass spectrometry, local vibrational mode infrared absorption, and electrical characterization to study the incorporation of Si delta-doped planes in GaAs grown by molecular beam epitaxy at 400 °C, in the concentration range 0.01–0.5 monolayers. A correspondence is observed between the density of SiGa donors, the free electron concentration and the total Si coverage, up to a coverage of ∼1013 cm−2; however, above this value, the electron density falls, while [SiGa] remains constant up to a coverage of ∼1014 cm−2, and then falls below the detection limit at 0.5 monolayer coverage. These effects have been interpreted in terms of a model which takes account of Si migration and aggregation on the delta-doped plane during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353374
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  • 6
    Electronic Resource
    Electronic Resource
    Surface segregation effects of In in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2481-2485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular-beam epitaxial growth of InAs monolayers between GaAs layers. The InAs growth temperature at which In segregation is detectable depends on the characterization technique used; using PL it is above 420 °C, but from TEM and SIMS it is 420 and 340 °C, respectively. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS data show that the total amount of In segregating and the extent of its distribution both increase with InAs deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354686
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  • 7
    Electronic Resource
    Electronic Resource
    Elimination of DX centerlike behavior of donors in heavily doped GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3087-3093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependencies of the electrical conductivity, Hall coefficient, and Shubnikov-de-Haas effect have been studied for n-GaAs heavily doped with Sn and Te. The results demonstrate that the energy level related to the DX centers formed by these donors is resonant and degenerate with the conduction band of GaAs. The energy separation of the GaAs conduction-band minimum and the DX center (EDX) for the Sn donor has been found to be similar to those of the Si- and S-related DX centers (around 0.3 eV at T≈100 K), whereas EDX(Te) is much greater, at around 0.55 eV. An analysis of the sample recovery after pressure-induced freezeout of electrons onto the DX centers has enabled the energy barrier for electron emission from the Sn-related DX center to the conduction band and the barrier for electron capture by the DX center, the inverse process, to be determined. Both energy barriers are very small compared to those associated with Si- and S-donor-induced DX centers. The values for EDX (for Sn and Te) and the barrier sizes (for Sn) measured in this work for donors in GaAs are found to be rather different than the equivalent energies in (Ga,Al)As, and this difference is interpreted as evidence that the local vicinity of the DX center (Ga only or Al/Ga) strongly influences its properties. Finally, these results have led to the proposal of Te as the most effective dopant from the point of view of elimination of the DX centerlike properties of donors in heavily doped GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348572
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  • 8
    Electronic Resource
    Electronic Resource
    The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2589-2596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type silicon-doped epitaxial layers of gallium arsenide grown by molecular-beam epitaxy (MBE) or metal-organo chemical vapor deposition (MOCVD) have been investigated by measurements of the Hall effect and the strengths of the localized vibrational modes (LVM) of silicon impurities using both Fourier transform absorption spectroscopy and Raman scattering at an excitation energy of 3 eV close to the E1 band gap. Lines from Si(Ga) donors, Si(As) acceptors, Si(Ga)-Si(As) pairs, and Si-X, a complex of silicon with a native defect, were detected and correlated for the two techniques. The maximum carrier concentration [n] found for samples grown under standard conditions was 5.5×1018 cm−3. At higher doping levels Si-X becomes dominant and acts as an acceptor, so reducing [n]. An integrated absorption of 1 cm−2 in the Si(Ga) LVM line corresponds to 5.0±4×1016 atoms cm−3: a similar calibration applies to the Si(As) line, but for Si-X, an absorption of 1 cm−2 corresponds to only 2.7±1.0×1016 defects cm−3. Possible structures for Si-X are discussed but a definitive model cannot yet be proposed. MBE samples grown at 400 °C had values of [n] close to 1019 cm−3, and a negligible concentration of Si-X. On annealing, [n] decreased and Si-X defects were produced together with site switching of Si(Ga) to Si(As). These results are important to the understanding of the mechanism of silicon diffusion at low temperatures. The infrared absorption and Raman measurements are complementary. Absorption measurements made at a resolution of 0.1 cm−1 require layers greater than or equal to 1 μm in thickness doped to a level of 3×1017 cm−3 but require the prior elimination of free-carrier absorption. Raman measurements can be made on as-grown layers only 10 nm in thickness doped to a level of 2×1018 cm−3, but with a spectral resolution of only 5 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344224
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of undoped GaAs spacers on the characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1183-1188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of undoped spacer layers on the electrical properties of single barrier heterostructures (both alloy and superlattice) have been investigated by measuring incremental slope resistance over the bias range −400 to +400 mV and at convenient temperature intervals between 70 and 290 K. The zero bias slope resistance, Rs(0), and the effective barrier heights increase with spacer thickness. Also, the low-temperature slope resistances, Rs(V), decrease exponentially with the magnitude of the bias, V, while the effective barrier heights, deduced from high-temperature measurements, decrease approximately linearly. This suggests that the decrease in Rs(V) with bias is due simply to the voltage-induced decrease in effective barrier height. Rs(0) varies exponentially with zero bias effective barrier height for both alloy and superlattice barriers and this is consistent with the Γ electrons dominating the current transport through the barriers. All of our Rs(V) curves are asymmetric and, using Airy function calculations, we have modeled curves similar to the experimental ones by assuming different doping levels for the two doped GaAs layers on either side of the barriers. This is possibly due to Si migration into the "undoped'' barrier or the spacer layer closest to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343061
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 971-974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is ≈ 3×1018 cm−3 for as-grown layers only 10 nm in thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347289
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