Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 68.48  (1)
  • epitaxy  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth (1987)
    Springer
    Applied physics 44 (1987), S. 195-200 
    Details
    ISSN: 1432-0630
    Keywords: 66.30j ; 61.70w ; 68.48
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a “kick-out” reaction which leads to the observed disordering of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626423
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 215-224 
    Details
    ISSN: 1057-9257
    Keywords: silicon ; epitaxy ; kinetics ; dynamics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si films on Si(001) substrates using a beam of disilane (Si2H6). By using a combination of reflection high-energy electron diffraction (RHEED) and reflection anisotropy spectroscopy (RAS), we show first how morphological (long-range order) and local electronic structure effects can be separated in the evaluation of growth dynamics. This involves the measurement of step density changes by RHEED concomitantly with the variation in domain coverage on the Si(001) (2×1)+(1×2) reconstructed surface by RAS. This approach is then extended to investigate the kinetics of hydrogen desorption, which is the rate-limiting step in Si growth from Si2H6. It is shown that over a significant temperature range, zeroth-order kinetics are obeyed and this is explained on the basis of a step-mediated desorption process. Finally we show how this influences the growth rate on substrates of differing degrees of vicinality. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...