ISSN:
1432-0630
Keywords:
72.70
;
73.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We report on temperature (77 to 300 K) and voltage dependent low frequency (100 Hz to 100 kHz) noise behavior of InGaAs/InP photodiodes in non-equilibrium steady state. In addition to common white, 1/f, and Lorentz noise we are able to observe for the first time minima and maxima in the photocurrent noise spectra. The recombination of a pair of free carriers through a recombination center at the heterointerface provides the correlation between the electron and hole ensembles necessary to explain the observed noise reduction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323897
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