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  • 1
    Electronic Resource
    Electronic Resource
    Bicyclic and tricyclic analogs of anthramycin (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 388-392 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00381a020
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  • 2
    Electronic Resource
    Electronic Resource
    Reductive amination of C-3-ketoanguidin and antitumor activity of the products (1985)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 958-960 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00145a019
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic conduction mechanisms in thin oxynitride films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1078-1080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new theory for electronic conduction in thin (150 A(ring)) oxynitride films. The present experiment reveals that the electronic conduction mechanism in the oxynitride deviates from that in conventionally grown silicon oxide in the electric field ranging from 6 to 14 MV/cm and suggests that the electronic conduction is governed by three different mechanisms according to the strength of electric field. We suggest that the current conduction is trap-assisted at electric fields lower than 8 MV/cm. Specifically, the conduction is due the tunneling of electrons into the shallow traps in the insulator. In the high-field region ((approximately-greater-than)10 MV/cm), the Fowler–Nordheim (FN) effect becomes dominant and depends on the dielectrics preparation conditions. In the moderate-field region, traps can be filled by both FN current and direct tunneling of electron into the traps which result in a quasi-saturation in the leakage current. The experiment also shows a turnaround behavior in leakage current level, ledge in current-voltage characteristics, and field dependency of the current as the nitridation proceeds. These observations can be readily explained based on the proposed conduction mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349673
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  • 4
    Electronic Resource
    Electronic Resource
    Generation of interface states at the silicon/oxide interface due to hot-electron injection (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7364-7368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By considering the decomposition of water-related bonds at the silicon/oxide interfaces, theoretical expressions for the hot-electron induced interface state generation and threshold-voltage shift are developed. Results demonstrate that the relation between the threshold-voltage shift and the hot-electron fluence needs not follow the power law. The developed expression of the threshold-voltage shift is a function of the initial interface trap density, interface hardness, density of water-related chemical bond, and the capture cross section of interface trap and can be used to explain most of the reported experiments. When the trapping rate and the generation rate are close to each other, a power law dependence of the threshold-voltage shift will be observed in a wide range of injection fluence. However, if the trapping rate is greater than the generation rate or for a sample with large hardness and small initial trap density, a quasi-saturation region is observed because of most of the interface trap being filled and the small amount of generated traps. Saturation of the threshold-voltage shift will occur when most of the water-related bonds are dissociated and the created traps are filled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355004
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of PrOx thin films on sapphire by pulsed laser deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4981-4983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PrOx thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800 °C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrOx film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7−δ films have been grown epitaxially on (100) Pr6O11 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352019
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of Si incorporation on the structural change of a-BxSi1−x alloy films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6094-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous BxSi1−x films can be easily prepared by low-pressure chemical vapor deposition over the whole range of x from 0 to 1. In this article, the structural change of BxSi1−x films (0≤x≤1) was studied by x-ray diffraction and infrared (IR) absorption experiments. It was found that these two methods are complementary to each other. X-ray results showed that when x is decreased, there is a gradual transition from the a-B structure, through the SiB4 structure, to the amorphous silicon structure. The transition to a-Si structure is complete at a surprisingly high boron concentration of around 40 at. %. Infrared data also revealed an unexpected result—that the presence of boron suppresses the formation of Si—H types of bonds in high silicon content films, in strong contrast to films prepared by the glow discharge method. Another interesting feature of the IR absorption spectra is the predominance of an absorption band, related to the presence of boronlike icosahedral clusters, in all films with boron concentration to as low as 17.6 at. %. Such clusters may be responsible for the easy formation of an impurity band lying about 0.2 eV above the valence mobility edge, as observed by transport measurements of boron-doped a-Si films prepared by low-pressure chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355171
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal conductivity of amorphous alloys above room temperature (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4919-4925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal conductivity of ten amorphous alloys has been measured between 280 and 500 K. The thermal conductivity, K, can be separated into the electronic (Ke) and phonon (Kph) contributions. The electronic thermal conductivity, deduced from the Wiedemann–Franz law, varies almost linearly with temperature, whereas the phonon thermal conductivity shows a slower increase. At 300 K, Kph accounts for 34–49% of K. The phonon mean free path l is 12.5 A(ring) for the binary alloy Fe80B20, but l decreases as the number of chemical components increases, reaching 7 A(ring) for the five-component alloys Fe32Ni36Cr14P12B6 and Co66Fe4Mo2B12Si16. The metal-metal glasses, Cu70Zr30 and Cu45Zr55, have l values slightly larger than 11 A(ring), indicating that they have short-range order similar to that of Fe80B20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349037
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373500
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  • 9
    Electronic Resource
    Electronic Resource
    Particle canonical variables and guiding center Hamiltonian up to second order in the Larmor radius (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 73-83 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generating function, expressed as a power series in the particle Larmor radius, is used to relate an arbitrary set of magnetic field line coordinates to particle canonical variables. A systematic procedure is described for successively choosing the generating function at each order in the Larmor radius so that the transformed particle Hamiltonian is independent of the Larmor phase angle. The particle guiding center Hamiltonian up to second order in the Larmor radius is thereby derived. The analysis includes finite electric fields in which the particle "electric drifts" can be of the order of the particle velocity. The transformations which relate an arbitrary set of toroidal magnetic flux coordinates to particle canonical variables are also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873782
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  • 10
    Electronic Resource
    Electronic Resource
    Nonlinear response of driven systems in weak turbulence theory (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1827-1838 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is presented for predicting the saturation levels and particle transport in weakly unstable systems with a discrete number of modes. Conditions are established for either steady-state or pulsating responses when several modes are excited for cases where there is and there is not resonance overlap. The conditions for saturation and the associated transport are discussed. Depending on parameters, the saturation level can be low, with only a small fraction of the available free energy released to waves and with no global transport, or the saturation level can be quite high, with almost complete conversion of free energy to wave energy coupled with rapid transport. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871978
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