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  • 1
    Digitale Medien
    Digitale Medien
    Magnetic anomalies in EuO/nonmagnetic insulator multilayered films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5301-5302 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferromagnetic EuO multilayered films (MLs) were fabricated with nonmagnetic oxides such as MgO, ZrO2, and Y2O3. The EuO MLs showed increased Curie temperature (Tc) and metal insulator transition temperature (Tmi) than the bulk values due to oxygen deficiency. However, 151Eu Mössbauer spectra did not exhibit such an anomaly in Tc. It suggests a field induced magnetic component in the MLs. Significant increase of coercive force (Hc) with decreasing EuO layer thickness was observed only in EuO/MgO MLs. It was suggested that this increase was originated from a kind of interface effect. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364524
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  • 2
    Digitale Medien
    Digitale Medien
    Structural characterization of a CuO/MgO artificially superstructured film by the x-ray diffraction method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1952-1955 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A CuO/MgO epitaxial artificially superstructured film [CuO(50 A(ring))/MgO(40 A(ring))]40 was successfully grown and its structure was studied by x-ray diffraction (XRD). The film was found to have a texture in which the (111) planes of monoclinic CuO and the (001) planes of cubic MgO were layered perpendicular to the film plane. Its lateral structure was revealed by precession photographs where the CuO [101¯] axis is oriented approximately along the MgO [100] axis in the film plane. The XRD pattern, observed over a wide range of scattering vectors perpendicular to the film plane, was carefully analyzed by an extended step model. The fluctuation of the superlattice period was estimated to be as small as 1 A(ring).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356343
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  • 3
    Digitale Medien
    Digitale Medien
    Magnetic properties of layered CuO in CuO/Al2O3 and CuO/MgO multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1189-1193 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Mössbauer spectra of 57Fe-doped polycrystalline CuO/Al2O3 multilayers (CAOs) show magnetic ordering at liquid helium temperature. The Néel temperature of a CAO with thin CuO layers is lower than that of bulk CuO judged from the temperature dependence of the Mössbauer spectra. A paramagnetic component was observed in all magnetic susceptibility measurements of the multilayers. The component also exists in both polycrystalline and epitaxial CuO/MgO multilayers. We have found that the component was localized at interfaces and derived from the spin fluctuation effect. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358984
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  • 4
    Digitale Medien
    Digitale Medien
    Strain-induced magnetic anisotropy in epitaxial Fe3O4/Co3O4 multilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2843-2846 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial multilayers of Fe3O4/Co3O4 were successfully grown on MgO and SrTiO3(001) single crystal substrates using a molecular beam epitaxy apparatus. The multilayers showed a strong in-plane magnetic anisotropy and an increase of coercive field for thin Fe3O4 samples. Multilayered Co3O4 exhibited a significant lattice expansion along the growth direction in order to compensate lattice mismatch at the interface. A small lattice distortion in the Fe3O4 layers might be the origin of the strong anisotropy. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1337591
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  • 5
    Digitale Medien
    Digitale Medien
    Variable-angle ultraviolet total-internal-reflection fluorescence spectroscopy using a white excitation light source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3520-3526 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: An apparatus for variable-angle ultraviolet total internal reflection fluorescence (TIRF) spectroscopy is described. TIRF spectroscopy is an analytical technique based on the excitation of fluorescence from a sample by means of an exponentially decaying surface energy wave. The limited penetration depth of the excitation volume results in excitation of fluorescence only near the sample/substrate interface. The angular spectrum makes TIRF spectroscopy suitable for obtaining quantitative information on the depth profile of a sample. In the instrument described here, precise positioning of incident optics with correction of the chromatic aberration due to the xenon light source enables the measurement of the excitation spectrum. The system provides the fluorescence and excitation spectra for study of the physical and chemical properties of thin-film structures. The incident- and observation-angle dependences of those spectra give important information on the depth profiles of the fluorophores in the samples. The performance of the instrument is demonstrated with thin polymer films containing a fluorescent probe of pyrene. Pyrene monomer is found to form the nonuniform depth profile different from that of pyrene excimer. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145464
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  • 6
    Digitale Medien
    Digitale Medien
    Infrared spectroscopy of NH+: An analysis of the perturbation between the X 2Π and a 4Σ− states (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4584-4591 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The v=1–0 vibration–rotation transitions in the X 2Π and a 4Σ− states as well as those between the two electronic states were observed with a difference frequency laser as a radiation source. The two electronic states (X 2Π and a 4Σ−) lie close together and interact each other strongly through the spin–orbit coupling. A merged least-squares fit was carried out with the present infrared transition wave numbers, some of the previous optical term values, and the recent far-infrared rotational transition frequencies to determine the spectroscopic parameters precisely. The equilibrium internuclear distance was obtained to be 1.0692±0.0002 and 1.0924±0.0001 A(ring) for the X and a states, respectively. The Λ-type doubling transition frequencies were calculated for several of the lowest J states with the molecular constants obtained and the hyperfine coupling constants determined from the far-infrared transitions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.453771
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  • 7
    Digitale Medien
    Digitale Medien
    Structural and superconducting properties of artificially superstructured MoN-TiN films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 921-929 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Superconducting artificially superstructured films (ASFs) composed of MoN and TiN have been prepared by an alternate reactive deposition method. Alternate layers of MoN and TiN were epitaxially grown on MgO(100) single-crystal substrates. Those ASFs with the periodicities of [MoN(0.4 nm)/TiN(0.4nm)], [MoN(0.2 nm)/TiN(3.4 nm)], and [MoN(2.4 nm)/TiN(0.2 nm)] were successfully synthesized. It was confirmed that the precise thickness of ASFs could be controlled on the atomic level. Average lattice constants of ASFs were calculated from the positions of satellite peaks observed in x-ray diffraction. Structural analyses indicate the formation of a single B1-MoN phase when conditions are optimized. ASFs containing B1-MoN layers showed lower superconducting transition temperatures (Tc 's) than those of ASFs with γ-Mo2N. A few probable reasons for the lower Tc are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345726
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  • 8
    Digitale Medien
    Digitale Medien
    Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 476-478 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors (DBRs) which were designed to overcome the limitation of the number of pairs originating from the strain accumulation were fabricated. Raman spectra of Si0.73Ge0.27/Si DBRs with 11 and 25 mirror pairs showed that SiGe and Si layers were under compressive and tensile strain on SiGe virtual substrates as designed. A record reflectivity of 80% was achieved at 1.44 μm in SiGe/Si DBRs with 25 pairs. The surface roughness of the 25 pair sample, however, was increased to about 46 nm compared with 6.3 nm of the 11 pair sample. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1385196
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  • 9
    Digitale Medien
    Digitale Medien
    Fabrication of strain-balanced Si/Si1−xGex multiple quantum wells on Si1−yGey virtual substrates and their optical properties (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 344-346 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strain-balanced Si/SiGe multiple quantum wells (MQWs), which are designed to overcome the limitation of the number of wells coming from the strain accumulation, were fabricated, and their optical properties were investigated. X-ray diffraction spectra and cross-sectional transmission-electron-microscope images showed a high-crystalline quality of samples and excellent uniformity of the well width. Well-resolved no-phonon and TO-phonon-assisted transitions from strain-balanced MQWs were observed by low-temperature photoluminescence spectroscopy, and both their temperature and excitation power dependence showed blueshifts due to the delocalization of excitons, the band bending, and/or the band-filling effect. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1387263
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  • 10
    Digitale Medien
    Digitale Medien
    Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 817-819 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1496142
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