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  • 1
    Electronic Resource
    Electronic Resource
    Detailed analysis of second-harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 215-217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of resonant intersubband second-harmonic generation in asymmetric GaAs/AlGaAs quantum wells using a cw or Q-switched tunable CO2 laser as the pumping source. The dependence of the second-harmonic intensity with the pump photon wavelength is presented for the first time. A Lorentzian-like second-harmonic line shape is found with a maximum at 10.9 μm and a linewidth of 0.4 μm (4.1 meV). These results are in good agreement with theoretical predictions. The expected quadratic dependence of the second-harmonic conversion efficiency with pump intensity is well verified for intensities up to 150 kW/cm2. The calibrated second-harmonic power reaches 0.13 μW for a cw pump power of 0.8 W. The value of 7.2×10−7 m/V deduced for the second-order nonlinear susceptibility is about 1900 times greater than that found in bulk GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103742
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  • 2
    Electronic Resource
    Electronic Resource
    Long-wavelength ((approximate)15.5 μm) unipolar semiconductor laser in GaAs quantum wells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3619-3621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unipolar semiconductor laser emitting in the mid-infrared spectral region is demonstrated. The laser scheme relies on a simple three-level system in GaAs/AlGaAs asymmetric coupled quantum wells. Population inversion between excited states is achieved by optical pumping of electrons from the ground state with a CO2 laser. Long-wavelength ((approximate)15.5 μm) laser emission is demonstrated. The laser is operated in the pulsed regime up to a temperature of 110 K and with an output peak power (approximate)0.4 W at 77 K. Unipolar quantum well semiconductor lasers based on this principle are capable of covering the long wavelength mid-infrared spectral region above 12 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120459
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental demonstration of complete photonic band gap in graphite structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1780-1782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the existence of complete photonic band gap in graphite-type photonic crystals, thereby confirming theoretical predictions reported in previous studies. Experiments are performed at microwave frequencies from 27 to 75 GHz using hexagonal lattices of alumina rods. Transmission spectra measured for E (TM) and H (TE) polarizations and for different orientations of the two-dimensional lattice are found to be in excellent agreement with numerical calculations. The complete photonic band gap results from the overlap of E7 and H5 forbidden bands. Attenuations larger than 30 dB are measured for structures comprised of only four rows of alumina rods. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119396
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  • 4
    Electronic Resource
    Electronic Resource
    Optical saturation of intersubband absorption in GaAs-AlxGa1−xAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 116-118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 A(ring) well width, and with x=0.57 and 96 A(ring) well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100386
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  • 5
    Electronic Resource
    Electronic Resource
    Reflection and transmission characterization of a hexagonal photonic crystal in the mid infrared (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5061-5064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of a hexagonal photonic crystal of air cylinders in silicon and its characterization in the mid infrared. The structure was obtained in electrochemically etched macroporous silicon. Simultaneous reflection and transmission measurements were undertaken for the two main crystal orientations and two polarizations. The first four orders of photonic band gaps were identified by transmission attenuations and reflection peaks. A complete photonic band gap was observed at 5.8 μm, in good agreement with numerical calculations. The measured reflection characteristics of the crystal demonstrate the application possibilities of photonic crystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367401
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrashort pulse generation from a Q-switched AlGaAs laser with cw injection (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 624-626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Injection of a weak cw radiation in a Q-switched AlGaAs laser diode is shown to produce single-mode pulses with a quasi-linear downchirp of very large amplitude. Strong pulse compression can be achieved by using single-mode dispersive fibers at the laser output. Time-resolved spectroscopic measurements of the laser pulses are presented. Optical solitary pulses shorter than 2 ps are obtained after compression, which corresponds to a pulse compression factor larger than 15. Although the laser-fiber coupling is not fully optimized, peak powers exceeding 3 W are measured at the fiber output. These performances are believed to be the best ever reported for an electrically pumped Q-switched AlGaAs laser diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105404
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of strained Si1−yCy alloys grown at low temperature (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 70-72 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of strained Si1−xCx alloys grown at low temperature by rapid thermal chemical vapor deposition is investigated. The photoluminescence spectra are mainly characterized by a deep level broadband at low energy which subsists up to room temperature. This low energy emission is associated with the low-temperature growth process required for the incorporation of carbon into substitutional sites. The stability of the layers after thermal annealing is monitored using this low energy radiative recombination. A blue shift of the photoluminescence energy peak is observed and the peak intensity presents a maximum versus annealing time. The blue shift and the associated increased linewidth is explained in terms of the local strain induced band-gap fluctuations. Infrared transmission spectra of the annealed samples suggest that silicon carbide precipitates appear during the anneal and that oxygen and carbon complexes contribute to the formation of the deep level band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114186
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  • 8
    Electronic Resource
    Electronic Resource
    Novel all-optical 10 μm waveguide modulator based on intersubband absorption in GaAs/AlGaAs quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2645-2647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient all-optical modulation of mid-infrared radiations based on photoinduced intersubband absorption of a GaAs/AlGaAs multiquantum well structure is demonstrated at room temperature. The sample designed for mid-infrared waveguiding was grown by molecular beam epitaxy. A double-resonance spectroscopy of both interband and intersubband transitions of the quantum wells is presented. The intersubband resonance is found at 9.56 μm. An AlGaAs laser diode is used to optically pump the quantum wells. On/off modulation ratios as high as 150:1 are obtained with only 45 mW pump power and for mid-infrared input powers up to 0.5 W. The frequency bandwidth of the device is presently comparable to that of acousto-optic modulators available at mid-infrared wavelengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105925
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  • 9
    Electronic Resource
    Electronic Resource
    Second-harmonic generation in asymmetric Si/SiGe quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2969-2971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of infrared second-harmonic generation in asymmetric Si/SiGe p-doped quantum wells is reported. The generated signal stems entirely from valence intersubband transitions, since bulk Si, with an inversion symmetric crystal structure, has a zero second-order susceptibility. The experiments were performed using a Q-switched CO2 laser operating at 10.56 μm and give a nonlinear susceptibility of 5×10−8 m/V. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113028
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  • 10
    Electronic Resource
    Electronic Resource
    Photoinduced intersubband absorption in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2948-2950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated photoinduced infrared absorption in p-doped Si/SiGe quantum wells. The absorption spectra exhibit two distinct features: free-carrier absorption and intersubband absorption in the valence band. The photoinduced absorption in both p and s polarizations is found to depend on the carrier density and strongly differs from the original absorption of the doped quantum wells. Photoinduced intersubband absorption is attributed to carriers away from the Brillouin zone center. We show that photoinduced intersubband absorption spectroscopy can provide useful information on valence band mixing effects in Si/SiGe quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114821
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